IRF2903ZSPBF [INFINEON]
AUTOMOTIVE MOSFET; 汽车MOSFET
| 型号： | IRF2903ZSPBF |
| 厂家： | 
Infineon |
| 描述： | AUTOMOTIVE MOSFET |
| 文件： | 总11页 (文件大小：345K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96098
AUTOMOTIVE MOSFET
IRF2903ZSPbF
IRF2903ZLPbF
Features
HEXFET® Power MOSFET
l
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
D
l
l
l
l
l
VDSS = 30V
RDS(on) = 2.4mΩ
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
G
ID = 75A
S
Description
D
D
SpecificallydesignedforAutomotiveapplications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistancepersiliconarea. Additionalfeatures
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
binetomakethisdesignanextremelyefficientand
reliable device for use in Automotive applications
and a wide variety of other applications.
S
S
D
D
G
G
D2Pak
TO-262
G
D
Drain
S
Gate
Source
Absolute Maximum Ratings
Parameter
Max.
235
166
75
Units
(Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ T = 25°C
C
D
D
D
(Silicon Limited)
(Package Limited)
@ T = 100°C
C
A
@ T = 25°C
C
1020
231
1.54
± 20
231
820
DM
P
@T = 25°C Power Dissipation
C
W
W/°C
V
D
Linear Derating Factor
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy
GS
EAS (Thermally limited)
AS (Tested )
mJ
E
Single Pulse Avalanche Energy Tested Value
Avalanche Current
IAR
See Fig.12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
Operating Junction and
mJ
-55 to + 175
T
T
J
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
STG
300 (1.6mm from case )
Thermal Resistance
Units
Parameter
Typ.
–––
–––
–––
Max.
0.65
62
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB Mount, steady state)
40
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1
04/06/07
IRF2903ZS/ZLPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
Reference to 25°C, ID = 1mA
∆
V
∆
(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C
V
GS = 10V, ID = 75A
RDS(on)
VGS(th)
gfs
mΩ
V
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
1.9
–––
–––
–––
–––
–––
–––
160
51
2.4
4.0
VDS = VGS, ID = 150µA
VDS = 10V, ID = 75A
VDS = 30V, VGS = 0V
Forward Transconductance
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
S
IDSS
Drain-to-Source Leakage Current
µA
V
DS = 30V, VGS = 0V, TJ = 125°C
VGS = 20V
GS = -20V
ID = 75A
DS = 24V
250
200
-200
240
–––
–––
–––
–––
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
nC
V
Qg
Qgs
Qgd
td(on)
tr
V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
VGS = 10V
VDD = 15V
ID = 75A
58
24
Rise Time
100
48
Ω
G = 3.2
R
td(off)
tf
Turn-Off Delay Time
ns
VGS = 10V
Fall Time
37
LD
Internal Drain Inductance
4.5
Between lead,
nH 6mm (0.25in.)
from package
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
DS = 25V
ƒ = 1.0MHz
Ciss
Input Capacitance
––– 6320 –––
––– 1980 –––
––– 1100 –––
––– 5930 –––
––– 2010 –––
––– 3050 –––
V
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Output Capacitance
pF
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 24V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 24V
Coss
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
I
Continuous Source Current
–––
–––
75
S
showing the
(Body Diode)
A
integral reverse
I
Pulsed Source Current
(Body Diode)
–––
––– 1020
SM
p-n junction diode.
T = 25°C, I = 75A, V = 0V
V
t
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
34
1.3
51
44
V
J
S
GS
SD
T = 25°C, I = 75A, VDD = 15V
ns
nC
J
F
rr
di/dt = 100A/µs
Q
29
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
t
on
2
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IRF2903ZS/ZLPbF
1000
100
10
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
100
4.5V
4.5V
≤ 60µs PULSE WIDTH
Tj = 25°C
≤ 60µs PULSE WIDTH
Tj = 175°C
1
10
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
240
T
= 25°C
J
200
160
120
80
100.0
10.0
1.0
T
= 175°C
J
T
= 175°C
J
T
= 25°C
J
V
= 25V
DS
40
V
= 10V
DS
380µs PULSE WIDTH
≤ 60µs PULSE WIDTH
0.1
0
2.0
3.0
4.0
5.0
6.0 7.0 8.0 9.0 10.0
0
20 40 60 80 100 120 140 160 180
Drain-to-Source Current (A)
V
, Gate-to-Source Voltage (V)
GS
I
D,
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
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3
IRF2903ZS/ZLPbF
12000
20
16
12
8
V
C
= 0V,
f = 1 MHZ
GS
I = 75A
D
V
= 24V
= C + C , C SHORTED
DS
VDS= 15V
iss
gs
gd ds
C
= C
10000
8000
6000
4000
2000
0
rss
gd
C
= C + C
ds
oss
gd
Ciss
Coss
Crss
4
0
0
40
80
120
160
200
240
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
100.0
10.0
1.0
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
1msec
100µsec
10msec
LIMITED BY PACKAGE
T
= 25°C
J
1
DC
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0.1
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF2903ZS/ZLPbF
2.0
1.5
1.0
0.5
240
200
160
120
80
I
= 75A
D
V
= 10V
GS
Limited By Package
40
0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
150
175
T
, Junction Temperature (°C)
J
T
, Case Temperature (°C)
C
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current Vs.
Vs. Temperature
Case Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF2903ZS/ZLPbF
600
500
400
300
200
100
0
15V
I
D
TOP
26A
42A
75A
DRIVER
L
V
DS
BOTTOM
D.U.T
AS
R
+
-
G
V
DD
I
A
2
V0GVS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
Q
Q
4.5
GS
GD
I
I
= 1.0A
D
D
= 1.0mA
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
G
ID = 250µA
= 150µA
I
D
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
V
GS
3mA
T
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage Vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRF2903ZS/ZLPbF
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
0.05
0.10
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
160
TOP
BOTTOM 1% Duty Cycle
= 75A
Single Pulse
I
D
120
80
40
0
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Vs. Temperature
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7
IRF2903ZS/ZLPbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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IRF2903ZS/ZLPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
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9
IRF2903ZS/ZLPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
10
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IRF2903ZS/ZLPbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
ꢀ
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.10mH
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB (FR-
4 or G-10 Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C
R
G = 25Ω, IAS = 75A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS
.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101]market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/2007
www.irf.com
11
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