IRF3710S [INFINEON]
Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A); 功率MOSFET （ VDSS = 100V ， RDS（ON） = 0.025ohm ，ID = 57A ）
| 型号： | IRF3710S |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) |
| 文件： | 总10页 (文件大小：186K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-91310C
IRF3710S/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRF3710S)
l Low-profile through-hole (IRF3710L)
l 175°C Operating Temperature
l Fast Switching
D
VDSS = 100V
RDS(on) = 0.025Ω
G
l Fully Avalanche Rated
ID = 57A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
itslowinternalconnectionresistanceandcandissipateup
to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for low-
profile applications.
2
T O -262
D
Pak
Absolute Maximum Ratings
Parameter
Max.
57
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
40
A
180
3.8
200
1.3
± 20
530
28
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
W
W
Power Dissipation
Linear Derating Factor
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
20
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.75
Units
RθJC
RθJA
°C/W
Junction-to-Ambient ( PCB Mounted,steady-state)**
–––
40
5/13/98
IRF3710S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mAꢀ
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.025
Ω
V
S
VGS = 10V, ID = 28A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 28Aꢀ
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
2.0
20
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 190
––– ––– 26
––– ––– 82
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 28A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 80V
VGS = 10V, See Fig. 6 and 13 ꢀ
–––
–––
–––
–––
14 –––
59 –––
58 –––
48 –––
VDD = 50V
ID = 28A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 2.5Ω
RD = 1.7Ω, See Fig. 10 ꢀ
Between lead,
and center of die contact
VGS = 0V
LS
Internal Source Inductance
nH
pF
–––
–––
7.5
Ciss
Coss
Crss
Input Capacitance
––– 3000 –––
––– 640 –––
––– 330 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– –––
––– –––
57
A
G
ISM
Pulsed Source Current
(Body Diode) ꢀ
integral reverse
180
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3
––– 210 320
––– 1.7 2.6
V
TJ = 25°C, IS = 28A, VGS = 0V
TJ = 25°C, IF = 28A
ns
Qrr
ton
µC di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Uses IRF3710 data and test conditions
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 1.4mH
RG = 25Ω, IAS = 28A. (See Figure 12)
ISD ≤ 28A, di/dt ≤ 460A/µs, VDD ≤ V(BR)DSS
,
TJ ≤ 175°C
** When mounted on FR-4 board using minimum recommended footprint.
For recommended footprint and soldering techniques refer to application note #AN-994.
IRF3710S/L
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs P ULSE W IDTH
20µs PULSE W IDTH
T
= 175°C
T
= 25°C
C
C
1
0.1
1
A
100
A
1
10
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
3.0
1000
I
= 46A
D
2.5
2.0
1.5
1.0
0.5
0.0
TJ = 25°C
100
10
1
TJ = 175°C
VDS = 50V
20µs PULSE W IDTH
V
= 10V
G S
A
10 A
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
4
5
6
7
8
9
T
J
, Junction Tem perature (°C)
VG S , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRF3710S/L
20
16
12
8
6000
I
= 28A
V
C
C
C
= 0V ,
f = 1M Hz
D
G S
iss
= C
+ C
+ C
,
C
SHORTE D
V
V
V
= 80V
= 50V
= 20V
gs
gd
ds
D S
D S
D S
= C
= C
rss
oss
gd
ds
5000
4000
3000
2000
1000
0
gd
C
iss
C
oss
C
rss
4
FOR TE ST CIRCUIT
S EE FIGURE 13
0
A
A
0
40
80
120
160
200
1
10
100
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
1000
OPE RATION IN THIS AREA LIM ITE D
BY R
DS(on)
10µs
100
10
1
100
10
1
T
= 175°C
J
100µs
T
= 25°C
J
1m s
10m s
T
T
= 25°C
= 175°C
C
J
V
= 0V
G S
S ingle Pulse
A
A
0.4
0.8
1.2
1.6
2.0
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
IRF3710S/L
60
50
40
30
20
10
0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
t
1
0.02
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRF3710S/L
1200
1000
800
600
400
200
0
I
D
TOP
11A
20A
28A
1 5V
BO TTO M
DRIVER
L
V
G
DS
D.U.T
R
+
V
D D
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
DD
A
25
75
100
125
150
175
V
Starting T , Junction Tem perature (°C)
(BR)DSS
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRF3710S/L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRF3710S/L
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
M AX.
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
M INIMUM RECOM MENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NO TES:
1
2
3
4
DIM ENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
DIM ENSIONING & TOLERANCING PER ANSI Y14.5M , 1982.
CONTROLLING DIM ENSION : INCH.
HEATSINK & LEAD DIM ENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
Part Marking Information
D2Pak
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUM BER
F530S
9246
1M
DATE CODE
(YYW W )
9B
ASSEM BLY
YY
=
YEAR
= W EEK
LOT CODE
W W
IRF3710S/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
IRF3710S/L
Tape & Reel Information
D2Pak
TRR
1.60 (.0 63)
1.50 (.0 59)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.0 73)
1 1.60 (.457)
1 1.40 (.449)
1.65 (.0 65)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M AX.
60.00 (2.362)
M IN .
30.40 (1.197)
M AX.
NO TES :
1. CO M FO RM S TO EIA-418.
2. CO N TR O LLING DIM ENSIO N : M ILLIM ETER.
3. DIM ENSIO N M EASU RED
26.40 (1.039)
24.40 (.961)
4
@ H UB.
3
4. INC LU DES FLAN G E D ISTO RTIO N
@
O U TER ED G E.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
5/98
相关型号：
IRF3710ZGPBF
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND LEAD FREE, PLASTIC PACKAGE-3
INFINEON
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