IRF3710ZSTRL [INFINEON]
暂无描述;型号: | IRF3710ZSTRL |
厂家: | Infineon |
描述: | 暂无描述 |
文件: | 总8页 (文件大小:96K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 91309A
IRF3710
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
D
VDSS = 100V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 23mΩ
G
l Fully Avalanche Rated
ID = 57A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermalresistanceandlowpackagecostoftheTO-220contributetoitswide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
57
40
A
230
PD @TC = 25°C
Power Dissipation
200
W
W/°C
V
Linear Derating Factor
1.3
VGS
IAR
Gate-to-Source Voltage
± 20
Avalanche Current
28
20
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
5.8
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
0.75
–––
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
°C/W
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1
01/17/02
IRF3710
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
100 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.13 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 23
mΩ VGS = 10V, ID =28A
2.0
32
––– 4.0
V
S
VDS = VGS, ID = 250µA
VDS = 25V, ID = 28A
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
Forward Transconductance
––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 130
––– ––– 26
––– ––– 43
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 28A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 80V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
12 –––
58 –––
45 –––
47 –––
VDD = 50V
ID = 28A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 2.5Ω
VGS = 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
G
7.5
S
Ciss
Coss
Crss
EAS
Input Capacitance
––– 3130 –––
––– 410 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
72 –––
pF
ƒ = 1.0MHz, See Fig. 5
––– 1060ꢀ280 mJ IAS = 28A, L = 0.70mH
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
57
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
230
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.2
––– 140 220
V
TJ = 25°C, IS = 28A, VGS = 0V
TJ = 25°C, IF = 28A
ns
Qrr
ton
––– 670 1010 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ISD ≤ 28A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 0.70mH
ꢀThis is a typical value at device destruction and represents
operation outside rated limits.
RG = 25Ω, IAS = 28A, VGS=10V (See Figure 12)
This is a calculated value limited to TJ = 175°C .
2
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IRF3710
1000
100
10
1000
100
10
VGS
16V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
VGS
16V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
TOP
TOP
BOTTOM 3.5V
BOTTOM 3.5V
3.5V
3.5V
1
1
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1000.00
57A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
100.00
10.00
1.00
T
= 175°C
J
T
J
= 25°C
V
= 15V
DS
20µs PULSE WIDTH
V
= 10V
GS
0.10
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
3.0
4.0
5.0
6.0
7.0
8.0
9.0
°
T , Junction Temperature
( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF3710
12
10
7
100000
10000
1000
D
I
= 28A
V
= 0V,
f = 1 MHZ
GS
V
V
V
=
=
=
80V
50V
20V
DS
DS
DS
C
= C + C
,
C
ds
SHORTED
iss
gs
gd
C
= C
rss
gd
C
= C + C
ds gd
oss
Ciss
Coss
5
Crss
100
2
10
1
0
0
20
Q
40
60
80
100
10
, Drain-to-Source Voltage (V)
100
, Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.00
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100.00
10.00
1.00
T
= 175°C
J
100µsec
1msec
T
= 25°C
J
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.10
0.1
0.0
0.5
1.0
1.5
2.0
1
10
100
1000
V
, Source-toDrain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF3710
60
50
40
30
20
10
0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
( C)
T
, Case Temperature
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1
P
DM
0.05
SINGLE PULSE
(THERMAL RESPONSE)
t
1
0.02
0.01
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T
= P
x Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF3710
550
440
330
220
110
0
I
15V
D
TOP
11A
20A
28A
BOTTOM
DR IVER
L
V
D S
D .U .T
A S
R
+
G
V
D D
-
I
A
VGS
0.0 1
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
( C)
Starting T , Junction Temperature
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF3710
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
[
[
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRF3710
Package Outline
TO-220AB
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
- B
-
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
- A
-
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
LEAD ASSIG NM ENTS
1
2
3
4
- GATE
1
2
3
- DRAIN
- SOU RC E
- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B
A
M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
N OTES:
1
2
D IMENSIONING
&
TOLERANCING PER ANSI Y14.5M, 1982.
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK LEAD MEASUREMENTS DO NOT INCLU DE BURRS.
C ONTROLLING DIMENSION : INCH
&
Part Marking Information
TO-220AB
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLYLINE "C"
DATE CODE
YEAR 7 = 1997
WE E K 19
ASSEMBLY
LOT CODE
LINE C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/02
8
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