IRF3710ZGPBF [INFINEON]
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND LEAD FREE, PLASTIC PACKAGE-3;
| 型号： | IRF3710ZGPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND LEAD FREE, PLASTIC PACKAGE-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96349
IRF3710ZGPbF
Features
Advanced Process Technology
HEXFET® Power MOSFET
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
D
VDSS = 100V
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Halogen-Free
RDS(on) = 18mΩ
G
ID = 59A
S
Description
ThisHEXFET® PowerMOSFETutilizesthelatest
processing techniques to achieve extremely low
on-resistancepersiliconarea. Additionalfeatures
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features
combinetomakethisdesignanextremelyefficient
and reliable device for use in a wide variety of
applications.
TO-220AB
IRF3710ZGPbF
Absolute Maximum Ratings
Parameter
Max.
59
Units
A
I
I
I
@ TC = 25°C
@ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Pulsed Drain Current
D
D
42
240
160
DM
P
@TC = 25°C
Maximum Power Dissipation
W
D
Linear Derating Factor
Gate-to-Source Voltage
1.1
± 20
W/°C
V
V
GS
EAS
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
170
200
mJ
EAS (tested)
Avalanche Current
IAR
See Fig.12a,12b,15,16
A
Repetitive Avalanche Energy
EAR
mJ
T
J
Operating Junction and
-55 to + 175
T
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.92
–––
62
Units
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
0.50
–––
°C/W
Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
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1
01/18/11
IRF3710ZGPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
∆ΒVDSS/∆TJ
RDS(on)
100
–––
0.10
14
–––
V
Breakdown Voltage Temp. Coefficient –––
––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
18
4.0
V
GS = 10V, ID = 35A
VDS = VGS, ID = 250µA
Ω
m
VGS(th)
–––
–––
–––
–––
–––
–––
82
V
gfs
IDSS
Forward Transconductance
35
–––
20
S
V
V
V
V
V
DS = 50V, ID = 35A
DS = 100V, VGS = 0V
DS = 100V, VGS = 0V, TJ = 125°C
GS = 20V
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA
250
200
-200
120
28
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
GS = -20V
Qg
Qgs
Qgd
td(on)
tr
nC ID = 35A
VDS = 80V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
19
27
40
V
GS = 10V
DD = 50V
17
–––
–––
–––
–––
–––
ns
V
Rise Time
77
ID = 35A
G = 6.8Ω
VGS = 10V
td(off)
tf
Turn-Off Delay Time
41
R
Fall Time
56
LD
Internal Drain Inductance
4.5
nH Between lead,
D
S
6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
pF VGS = 0V
DS = 25V
ƒ = 1.0MHz, See Fig. 5
Ciss
Input Capacitance
––– 2900 –––
Coss
Output Capacitance
–––
–––
290
150
–––
–––
V
Crss
Reverse Transfer Capacitance
Output Capacitance
Coss
––– 1130 –––
V
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
GS = 0V, VDS = 80V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
–––
170
280
–––
–––
V
Coss eff.
Effective Output Capacitance
VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
Continuous Source Current
–––
–––
59
(Body Diode)
Pulsed Source Current
A
V
showing the
integral reverse
G
ISM
–––
–––
240
(Body Diode)
Diode Forward Voltage
p-n junction diode.
VSD
T = 25°C, I = 35A, V = 0V
–––
–––
1.3
J
S
GS
trr
Qrr
T = 25°C, I = 35A, VDD = 25V
J F
di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
50
100
75
160
ns
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.27mH,
RG = 25Ω, IAS = 35A, VGS =10V. Part not
recommended for use above this value.
.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
ISD ≤ 35A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C.
,
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
2
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IRF3710ZGPbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
4.5V
BOTTOM
1
4.5V
4.5V
0.1
0.01
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
120
100
T = 25°C
J
T
= 175°C
100
10
1
J
80
T
= 175°C
J
60
40
20
0
T
= 25°C
V
J
= 25V
VDS = 15V
20µs PULSE WIDTH
DS
20µs PULSE WIDTH
0
2
4
6
8 10
0
10
20
30
40
50
60
70
V
, Gate-to-Source Voltage (V)
GS
I , Drain-to-Source Current (A)
D
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
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3
IRF3710ZGPbF
100000
12.0
10.0
8.0
V
C
= 0V,
f = 1 MHZ
GS
iss
I = 35A
D
= C + C
,
C
SHORTED
gs
gd
ds
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
C
= C
gd
rss
= C + C
oss
ds
gd
10000
1000
100
Ciss
6.0
Coss
4.0
Crss
2.0
10
0.0
1
10
100
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
DS
Q
Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.00
100.00
10.00
1.00
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T = 175°C
J
100µsec
T = 25°C
J
1msec
1
Tc = 25°C
10msec
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.10
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF3710ZGPbF
60
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
= 59A
D
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
150
175
T
, Case Temperature (°C)
T , Junction Temperature (°C)
C
J
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs. Temperature
Case Temperature
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF3710ZGPbF
15V
300
250
200
150
100
50
I
D
TOP
15A
25A
DRIVER
+
L
V
DS
BOTTOM 35A
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
5.0
V
G
4.0
3.0
2.0
1.0
Charge
Fig 13a. Basic Gate Charge Waveform
I
= 250µA
D
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175 200
V
GS
T , Temperature ( °C )
J
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
6
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IRF3710ZGPbF
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
0.01
assuming
Tj = 25°C due to
∆
avalanche losses
0.05
0.10
1
0.1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
tav (sec)
1.0E-04
1.0E-03
1.0E-02
1.0E-01
Fig 15. Typical Avalanche Current vs.Pulsewidth
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 10% Duty Cycle
= 35A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
0
25
50
75
100
125
150
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
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7
IRF3710ZGPbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
8
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IRF3710ZGPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRFB4310GPBF
PART NUMBER
DAT E CODE:
INTERNATIONAL
RECTIFIER
LOGO
Note: "G" suffix in part number
indicates "Halogen - F ree"
Y= LAST DIGIT OF
CAL E NDAR YE AR
Note: "P" in assembly lineposition
indicates "Lead - F ree"
ASSEMBLY
LOT CODE
WW= WORK WE E K
X= FACTORY CODE
TO-220AB package is not recommended for Surface Mount Application
Notes:
1. For an Automotive Qualified version of this part please see http://www.irf.com/product-info/datasheets/data/auirf3710z.pdf
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/2011
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9
相关型号：
IRF3710ZSTRLPBF
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRF3710ZSTRRPBF
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
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