IRF6215SL [INFINEON]
Advanced Process Technology;
| 型号： | IRF6215SL |
| 厂家： | 
Infineon |
| 描述： | Advanced Process Technology |
| 文件： | 总11页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91643
IRF6215S/L
HEXFET® Power MOSFET
l Advanced Process Technology
l Surface Mount (IRF6215S)
l Low-profile through-hole (IRF6215L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
D
VDSS = -150V
RDS(on) = 0.29Ω
G
ID = -13A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedizeddevicedesignthatHEXFETPowerMOSFETs
arewellknownfor,providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF6215L) is available for low-
profileapplications.
2
T O -262
D
Pak
Absolute Maximum Ratings
Parameter
Max.
-13
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ -10Vꢀ
Continuous Drain Current, VGS @ -10Vꢀ
Pulsed Drain Current ꢀ
-9.0
-44
A
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
3.8
W
W
Power Dissipation
110
0.71
± 20
310
-6.6
11
Linear Derating Factor
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
mJ
V/ns
-5.0
-55 to + 175
300 (1.6mm from case )
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
1.4
40
Units
RθJC
RθJA
°C/W
5/13/98
IRF6215S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-150 ––– –––
Conditions
VGS = 0V, ID = -250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.20 ––– V/°C Reference to 25°C, ID = -1mAꢀ
––– ––– 0.29
––– ––– 0.58
-2.0 ––– -4.0
VGS = -10V, ID = -6.6A
VGS = -10V, ID = -6.6A TJ = 150°C
VDS = VGS, ID = -250µA
VDS = -25V, ID = -6.6Aꢀ
VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
3.6
––– –––
––– ––– -25
––– ––– -250
––– ––– 100
––– ––– -100
––– ––– 66
––– ––– 8.1
––– ––– 35
µA
nA
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = 20V
Qg
ID = -6.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = -120V
VGS = -10V, See Fig. 6 and 13 ꢀ
–––
–––
–––
–––
14 –––
36 –––
53 –––
37 –––
VDD = -75V
RiseTime
ID = -6.6A
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 6.8Ω
RD = 12Ω, See Fig. 10 ꢀ
Between lead,
and center of die contact
VGS = 0V
LS
Internal Source Inductance
7.5
–––
–––
nH
pF
Ciss
Coss
Crss
Input Capacitance
––– 860 –––
––– 220 –––
––– 130 –––
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– ––– -11
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– –––
-44
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– -1.6
––– 160 240
––– 1.2 1.7
V
TJ = 25°C, IS = -6.6A, VGS = 0V
ns
TJ = 25°C, IF = -6.6A
Qrr
ton
µC di/dt = -100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Uses IRF6215 data and test conditions
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 14mH
RG = 25Ω, IAS = -6.6A. (See Figure 12)
ISD ≤ -6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IRF6215S/L
100
10
1
100
10
1
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
TOP
TOP
BOT TOM - 4.5V
BOTTOM - 4.5V
-4.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
T = 175°C
T = 175°C
J
C
-4.5V
T = 25°C
T
= 25°C
c
J
A
A
1
10
100
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
D S
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
I
= -11A
D
TJ = 25°C
TJ = 175°C
VDS = -50V
20µs PULSE W IDTH
V
= -10V
G S
A
10 A
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
4
5
6
7
8
9
T
J
, Junction Tem perature (°C)
-VG S , Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRF6215S/L
2000
20
16
12
8
V
C
C
C
= 0V ,
f = 1M Hz
I
= -6.6A
G S
iss
D
V
V
V
= -120V
= -75V
= -30V
D S
D S
D S
= C
= C
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
gd
ds
rss
oss
gd
1600
1200
800
400
0
C
iss
C
C
oss
rss
4
FO R TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
20
G
40
60
80
-V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPE RATION IN THIS AREA LIM ITE D
BY R
DS(on)
10µs
T
= 175°C
J
T
= 25°C
J
100µs
1m s
T
TCC = 25°C
= 175°C
J
10m s
Single Pulse
V
= 0V
G S
0.1
A
A
1000
0.2
0.6
1.0
1.4
1.8
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRF6215S/L
RD
15
12
9
VDS
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRF6215S/L
800
600
400
200
0
L
V
I
DS
D
TOP
-2.7A
-4.7A
-6.6A
D.U.T
R
BO TTO M
G
V
DD
A
I
AS
DRIVER
-20V
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
A
25
50
75
100
125
150
175
I
AS
Starting T , Junction Tem perature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRF6215S/L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
[
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
IRF6215S/L
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
M AX.
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
M INIMUM RECOM MENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NO TES:
1
2
3
4
DIM ENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
DIM ENSIONING & TOLERANCING PER ANSI Y14.5M , 1982.
CONTROLLING DIM ENSION : INCH.
HEATSINK & LEAD DIM ENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
Part Marking Information
D2Pak
A
INTERNATIONAL
RECTIFIER
LOGO
PART NUM BER
F530S
9246
1M
DATE CODE
(YYW W )
9B
ASSEM BLY
YY
=
YEAR
= W EEK
LOT CODE
W W
IRF6215S/L
Package Outline
TO-262 Outline
Part Marking Information
TO-262
IRF6215S/L
Tape & Reel Information
D2Pak
TRR
1 .6 0 (.063 )
1 .5 0 (.059 )
1.60 (.06 3)
1.50 (.05 9)
4.10 (.16 1)
3.90 (.15 3)
0.3 68 (.0145)
0.3 42 (.0135)
FEED DIRECTION
1.85 (.07 3)
11.60 (.457)
11.40 (.449)
1.65 (.06 5)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.42 9)
10.70 (.42 1)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M A X.
60.00 (2.362)
MIN .
30.40 (1.197)
M AX.
NO TES :
1. CO M FO RM S TO EIA-418.
2. CO N TR O LLIN G D IM ENSIO N : M ILLIM ET ER .
3. DIM ENSIO N MEASUR ED
26.40 (1.039)
24.40 (.961)
4
@ HU B.
3
4. INC LUD ES FLAN G E D ISTO R TIO N
@
O UTER EDG E.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
5/98
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
IRF6215STRL
Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
INFINEON
IRF6215STRLPBF
Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRF6215STRRPBF
Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRF6216PBF-1
Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
INFINEON
IRF6216TR
Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
INFINEON
IRF6216TRPBF-1
Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
INFINEON
©2020 ICPDF网 联系我们和版权申明