IRF6216TR [INFINEON]
Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8;
| 型号： | IRF6216TR |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94297
IRF6216
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l Reset Switch for Active Clamp Reset
VDSS
RDS(on) max
ID
-150V 0.240Ω@VGS =-10V -2.2A
DC-DC converters
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design (See
App. Note AN1001)
A
1
2
8
7
D
S
S
D
3
4
6
5
S
D
D
G
l Fully Characterized Avalanche Voltage
and Current
SO-8
Top View
Absolute Maximum Ratings
Parameter
Max.
-2.2
-1.9
-19
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
PD @TA = 25°C
Power Dissipation
2.5
W
W/°C
V
Linear Derating Factor
0.02
± 20
7.8
VGS
dv/dt
TJ
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
50
°C/W
Notes through are on page 8
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1
02/12/02
IRF6216
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-150 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.17 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.240
-3.0 ––– -5.0
––– ––– -25
––– ––– -250
––– ––– -100
––– ––– 100
Ω
VGS = -10V, ID = -1.3A
VDS = VGS, ID = -250µA
V
VDS = -150V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = -120V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = -20V
IGSS
VGS = 20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
gfs
2.7
–––
–––
–––
–––
–––
–––
–––
––– –––
S
VDS = -50V, ID = -1.3A
ID = -1.3A
Qg
33
7.2
15
49
11
23
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -120V
VGS = -10V,
18 –––
15 –––
33 –––
26 –––
VDD = -75V
ID = -1.3A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.5Ω
VGS = -10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1280 –––
––– 220 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = -25V
–––
––– 1290 –––
––– 99 –––
––– 220 –––
53 –––
pF
ƒ = 1.0MHz
VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = -120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to -120V
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
200
Units
mJ
EAS
IAR
-4.0
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
-2.2
-19
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– -1.6
––– 80 120
––– 310 460
V
TJ = 25°C, IS = -1.3A, VGS = 0V
TJ = 25°C, IF = -1.3A
nS
Qrr
nC di/dt = -100A/µs
2
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IRF6216
100
100
10
1
VGS
-15V
-12V
-10V
-8.0V
-7.0V
VGS
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
TOP
TOP
10
BOTTOM
BOTTOM
1
-5.0V
0.1
D
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T
= 150
J
C
T = 25
J
C
0.1
0.01
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
-2.2A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
C
T
= 25
J
10
°
C
T
= 150
J
1
V
= -50V
DS
V
= -10V
GS
20µs PULSE WIDTH
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
5.0
5.5
6.0
6.5
7.0 7.5
8.0
°
T , Junction Temperature
(
C)
-V , Gate-to-Source Voltage (V)
GS
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF6216
10000
12
10
8
V
= 0V,
f = 1 MHZ
I
-1.3A
=
D
GS
V
V
V
= -120V
= -75V
= -30V
DS
DS
DS
C
= C + C
,
C
SHORTED
iss
gs
gd
ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
1000
100
6
Coss
Crss
4
2
10
1
0
0
5
10
15
20
25
30
35
10
100
1000
Q
, Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
°
T = 150
C
J
1msec
°
T = 25
C
J
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.1
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF6216
2.5
2.0
1.5
1.0
0.5
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
Notes:
(THERMAL RESPONSE)
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJA
A
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF6216
0.23
1.50
1.00
0.50
0.00
0.22
0.21
0.20
0.19
V
= -10V
GS
I
= -2.2A
D
4.5
6.0
-V
7.5
9.0
10.5
12.0
13.5
15.0
0
2
4
6
8
10
12
14
16
18
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
Q
G
-VGS
50KΩ
.3µF
.2µF
12V
Q
500
GS
GD
I
-
D
V
+
DS
V
D.U.T.
G
TOP
-1.8A
-3.2A
-4.0A
V
GS
400
300
200
100
0
Charge
BOTTOM
-3mA
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
L
V
D S
I
AS
D .U.T
R
G
V
D D
A
I
A S
DR IVER
-20V
0.01
t
Ω
p
25
50
75
100
125
150
t
p
°
( C)
Starting Tj, Junction Temperature
15V
V
(BR)DSS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF6216
SO-8 Package Details
INC HES
MILLIMETER S
DIM
D
MIN
M AX
.0688
.0098
.018
MIN
1.35
0.10
0.36
0.19
4.80
3.81
MAX
1.75
0.25
0.46
0.25
4.98
3.99
5
-
7
2
B -
A
.0532
.0040
.014
A1
B
8
1
6
3
5
4
5
H
E
A
C
D
E
.0075
.189
.0098
.196
0 .25 (.01 0)
M
A M
-
-
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 4 5°
6X
e1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C
-
0.1 0 (.0 04 )
6
C
8 X
L
8X
L
A 1
B
8 X
θ
0.2 5 (.010 )
M
C A S B S
R E C O M M E N D E D F O O T P R IN T
N O T E S :
0.7 2 (.028
8X
)
1. D IM E N S IO N IN G A N D T O LE R A N C IN G P E R A N S I Y 14 .5M -19 82 .
2. C O N T R O LL IN G D IM E N S IO N : IN C H .
3. D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S (IN C H E S ).
4. O U TL IN E C O N F O R M S TO JE D E C O U TL IN E M S -01 2A A .
6.46 ( .2 55
)
1.78 (.0 70 )
8X
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O TR U S IO N S
M O LD P R O T R U S IO N S N O T TO E XC E E D 0.25 (.0 06 ).
D IM E N S IO N S IS TH E LE N G T H O F LE A D F O R S O LD E R IN G T O
A
S U B S TR A TE ..
6
1 .27
(
.05 0
)
3 X
SO-8 Part Marking
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7
IRF6216
SO-8 Tape and Reel
TERMINAL NUMBER
1
12.3
11.7
(
(
.484
.461
)
)
8.1 ( .318
7.9 ( .312
)
)
FEED DIRECTION
N OTES :
1. CO NTRO LLING DIME NSIO N : MILLIMETER .
2. ALL DIMENS ION S ARE SHO W N IN MILL IME TER S(INC HES).
3. OU TL IN E CO N FO RM S TO EIA-481 & EIA-541.
330.00
(12.992)
M AX.
14.40 ( .566
12.40 ( .488
)
)
NOTES
:
1. CO NTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORM S TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
When mounted on 1 inch square copper board.
Starting TJ = 25°C, L = 25mH
RG = 25Ω, IAS = -4.0A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/02
8
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