IRF6216PBF-1 [INFINEON]
Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8;
| 型号： | IRF6216PBF-1 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Field-Effect Transistor, 2.2A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 光电二极管 |
| 文件： | 总8页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF6216PbF-1
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = -10V)
Qg (typical)
ID
-150
0.24
33
V
Ω
A
1
2
3
4
8
D
S
S
7
D
nC
A
6
S
G
D
5
-2.2
D
(@TA = 25°C)
SO-8
Top View
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Form
Base Part Number
Package Type
Orderable Part Number
Quantity
Tube/Bulk
Tape and Reel
95
4000
IRF6216PbF-1
IRF6216TRPbF-1
IRF6216PbF-1
SO-8
Absolute Maximum Ratings
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
-2.2
-1.9
-19
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
A
PD @TA = 25°C
Power Dissipation
2.5
W
W/°C
V
Linear Derating Factor
0.02
± 20
7.8
VGS
dv/dt
TJ
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
50
°C/W
Notes through are on page 8
1
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IRF6216PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-150 ––– –––
Conditions
VGS = 0V, ID = -250μA
V(BR)DSS
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– -0.17 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.240
-3.0 ––– -5.0
––– ––– -25
––– ––– -250
––– ––– -100
––– ––– 100
Ω
V
VGS = -10V, ID = -1.3A
VDS = VGS, ID = -250μA
VDS = -150V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
μA
VDS = -120V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = -20V
nA
IGSS
VGS = 20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
gfs
2.7
–––
–––
–––
–––
–––
–––
–––
––– –––
S
VDS = -50V, ID = -1.3A
ID = -1.3A
Qg
33
7.2
15
49
11
23
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -120V
VGS = -10V,
18 –––
15 –––
33 –––
26 –––
VDD = -75V
ID = -1.3A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.5Ω
VGS = -10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1280 –––
––– 220 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = -25V
–––
––– 1290 –––
––– 99 –––
––– 220 –––
53 –––
pF
ƒ = 1.0MHz
VGS = 0V, VDS = -1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = -120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to -120V
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
200
Units
mJ
EAS
IAR
Avalanche Current
–––
-4.0
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
-2.2
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
-19
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– -1.6
––– 80 120
––– 310 460
V
TJ = 25°C, IS = -1.3A, VGS = 0V
nS TJ = 25°C, IF = -1.3A
Qrr
nC di/dt = -100A/μs
2
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IRF6216PbF-1
100
10
100
10
1
VGS
VGS
TOP
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
TOP
-15V
-12V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM
BOTTOM
1
-5.0V
-5.0V
0.1
0.01
20μs PULSE WIDTH
20μs PULSE WIDTH
°
T = 150
J
C
°
T = 25
J
C
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.5
-2.2A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25
J
C
10
°
T = 150
C
J
1
V
= -50V
DS
V
= -10V
20μs PULSE WIDTH
GS
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
°
5.0
5.5
6.0
6.5
7.0 7.5
8.0
T , Junction Temperature
( C)
-V , Gate-to-Source Voltage (V)
GS
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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IRF6216PbF-1
10000
1000
100
12
10
8
V
C
= 0V,
f = 1 MHZ
I
D
= -1.3A
GS
V
V
V
= -120V
= -75V
= -30V
DS
DS
DS
= C + C
,
C
SHORTED
iss
gs
gd
ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
6
Coss
Crss
4
2
10
0
0
5
10
15
20
25
30
35
1
10
100
1000
Q
, Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100μsec
°
T = 150
C
J
1msec
°
T = 25
C
J
10msec
Tc = 25°C
Tj = 150°C
V
= 0 V
GS
Single Pulse
0.1
0.1
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
-V ,Source-to-Drain Voltage (V)
SD
-V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF6216PbF-1
2.5
2.0
1.5
1.0
0.5
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJA
A
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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IRF6216PbF-1
0.23
0.22
0.21
0.20
0.19
1.50
1.00
0.50
0.00
V
= -10V
GS
I
= -2.2A
D
4.5
6.0
-V
7.5
9.0
10.5
12.0
13.5
15.0
0
2
4
6
8
10
12
14
16
18
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
Q
G
-VGS
50KΩ
.3μF
.2μF
12V
Q
500
GS
GD
I
-
D
V
+
DS
V
D.U.T.
G
TOP
-1.8A
-3.2A
-4.0A
V
GS
400
300
200
100
0
Charge
BOTTOM
-3mA
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
L
V
DS
I
AS
D.U.T
R
G
V
DD
A
I
AS
DRIVER
-20V
0.01
Ω
t
p
25
50
75
100
125
150
t
p
°
( C)
Starting Tj, Junction Temperature
15V
V
(BR)DSS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF6216PbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
D
B
MIN
.0532
A1 .0040
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A
E
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
FOOTPRINT
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLINGDIMENSION: MILLIMETER
8X 0.72 [.028]
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OU T L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
DIMENSION IS THE LENGT H OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEE K
A = AS S E MB L Y S IT E CODE
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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June 30, 2014
IRF6216PbF-1
SO-8 Tape and Reel (Dimensions are shown in millimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 25mH, RG = 25Ω, IAS = -4.0A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-STD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
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June 30, 2014
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