IRF6215STRL [INFINEON]

Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3;


型号：	IRF6215STRL
厂家：	Infineon
描述：	Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
文件：	总8页 (文件大小：127K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 91479B

IRF6215

HEXFET^®Power MOSFET

l Advanced Process Technology

l Dynamic dv/dt Rating

l 175°C Operating Temperature

l Fast Switching

V_DSS= -150V

R_DS(on)= 0.29Ω

l P-Channel

l Fully Avalanche Rated

I_D= -13A

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrialapplicationsatpowerdissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220

contribute to its wide acceptance throughout the

industry.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

-13

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-9.0

-44

P_D@T_C= 25°C

Power Dissipation

110

W/°C

Linear Derating Factor

0.71

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

310

-6.6

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-5.0

-55 to + 175

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

Units

R_θJC

R_θCS

R_θJA

1.4

–––

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

0.50

–––

°C/W

5/13/98

IRF6215

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

-150 ––– –––

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

∆V_(BR)DSS/∆T_JBreakdown Voltage Temp. Coefficient ––– -0.20 ––– V/°C Reference to 25°C, I_D= 1mA

––– ––– 0.29

––– ––– 0.58

-2.0 ––– -4.0

V_GS= -10V, I_D= -6.6A , T_J= 25°C

V_GS= -10V, I_D= -6.6A , T_J= 150°C

V_DS= V_GS, I_D= -250µA

V_DS= -50V, I_D= -6.6A

V_DS= -150V, V_GS= 0V

V_DS= -120V, V_GS= 0V, T_J= 150°C

V_GS= 20V

R_DS(on)

Static Drain-to-Source On-Resistance

Ω

V_GS(th)

g_fs

Gate Threshold Voltage

Forward Transconductance

3.6

––– –––

––– ––– -25

––– ––– -250

––– ––– 100

––– ––– -100

––– ––– 66

––– ––– 8.1

––– ––– 35

µA

I_DSS

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

I_GSS

V_GS= -20V

Q_g

I_D= -6.6A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

nC V_DS= -120V

V_GS= -10V, See Fig. 6 and 13

–––

14 –––

36 –––

53 –––

37 –––

V_DD= -75V

I_D= -6.6A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

R_G= 6.8Ω

R_D= 12Ω, See Fig. 10

Between lead,

6mm (0.25in.)

from package

and center of die contact

V_GS= 0V

L_D

L_S

Internal Drain Inductance

Internal Source Inductance

––– 4.5 –––

––– 7.5 –––

C_iss

C_oss

C_rss

Input Capacitance

––– 860 –––

––– 220 –––

––– 130 –––

Output Capacitance

V_DS= -25V

Reverse Transfer Capacitance

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

I_S

-13

-44

––– –––

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

––– ––– -1.6

––– 160 240

––– 1.2 1.7

T_J= 25°C, I_S= -6.6A, V_GS= 0V

T_J= 25°C, I_F= -6.6A

Q_rr

t_on

µC di/dt = -100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Notes:

Repetitive rating; pulse width limited by

I_SD≤ -6.6A, di/dt ≤ -620A/µs, V_DD≤ V_(BR)DSS

max. junction temperature. ( See fig. 11 )

T_J≤ 175°C

Starting T_J= 25°C, L = 14mH

Pulse width ≤ 300µs; duty cycle ≤ 2%.

R_G= 25Ω, I_AS= -6.6A. (See Figure 12)

IRF6215

100

VGS

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

VGS

- 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

TOP

BOTTOM - 4.5V

-4.5V

20µs PULSE W IDTH

= 25°C

-4.5V

= 175°C

100

-V

, Drain-to-Source Voltage (V)

-V

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics,

Fig 2. Typical Output Characteristics,

2.5

2.0

1.5

1.0

0.5

0.0

100

= -11A

T_J= 2 5 °C

T_J= 17 5 °C

V _{D S}= -5 0 V

2 0 µs P UL S E W ID TH

= -10V

G S

₁₀A

-60 -40 -20

80 100 120 140 160 180

, Junction Tem perature (°C)

-V

, G ate-to -Sou rce Voltage (V)

G S

Fig 4. Normalized On-Resistance

Fig 3. Typical Transfer Characteristics

Vs. Temperature

IRF6215

2000

= 0V ,

f = 1M Hz

= -6.6A

G S

iss

= -120V

= -75V

= -30V

D S

= C

+ C

SHORTED

rss

oss

1600

iss

1200

800

400

oss

rss

FO R TEST CIRCUIT

SEE FIGURE 13

100

-V

, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

OPE RATION IN THIS AREA LIM ITE D

BY R DS(on)

10µs

100µs

1m s

= 175°C

= 25°C

= 175°C

Single Pulse

10m s

= 0V

G S

0.1

1000

0.2

0.6

1.0

1.4

1.8

100

-V

, Drain-to-Source Voltage (V)

-V

, Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

IRF6215

R_D

V_DS

V_GS

D.U.T.

R_G

V_DD

-10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

d(on)

d(off)

10%

100

125

150

175

, Case Temperature ( C)

90%

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D =

t / t

1 2

2. Peak T = P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF6215

800

600

400

200

D S

TOP

-2.7A

-4.7A

-6.6A

BO TTO M

D .U .T

D D

A S

D R IV ER

-20V

0.0 1

Ω

15V

Fig 12a. Unclamped Inductive Test Circuit

175

100

125

150

Starting T , Junction Tem perature (°C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

-10V

D.U.T.

-3mA

Charge

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

IRF6215

Peak Diode Recovery dv/dt Test Circuit

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T*

R_G

• dv/dt controlled by R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

V_GS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D =

P.W.

[

=10V

] ***

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

[

]

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

]

Ripple ≤ 5%

*** V_GS= 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

IRF6215

Package Outline

TO-220AB Outline

Dimensions are shown in millimeters (inches)

10.54 (.415)

10.29 (.405)

- B

3.78 (.149)

3.54 (.139)

2.87 (.113)

2.62 (.103)

4.69 (.185)

4.20 (.165)

1.32 (.052)

1.22 (.048)

- A

6.47 (.255)

6.10 (.240)

15.24 (.600)

14.84 (.584)

1.15 (.045)

M IN

LEAD ASSIG NM ENTS

- GATE

- DRAIN

- SOU RC E

- DRAIN

14.09 (.555)

13.47 (.530)

4.06 (.160)

3.55 (.140)

0.93 (.037)

0.69 (.027)

0.55 (.022)

0.46 (.018)

1.40 (.055)

1.15 (.045)

0.36 (.014)

2.92 (.115)

2.64 (.104)

2.54 (.100)

N OTES:

D IM ENSIONING

TOLERANCING PER ANSI Y14.5M , 1982.

OUTLINE CONFORM S TO JEDEC OUTLINE TO-220AB.

HEATSINK LEAD M EASUREM ENTS DO NOT INCLU DE BURRS.

C ONTROLLING DIM ENSION : INCH

Part Marking Information

TO-220AB

EXAMPLE : THIS IS AN IR F1010

W ITH ASSEM BLY

LOT C ODE 9B1M

INTERNATIONAL

PART NU M BER

RECTIFIER

IR F1010

LOGO

9246

D ATE COD E

ASSEMBLY

(YYW W )

LOT

CO DE

LOT CO DE

YEAR

= YEAR

W W

= W EEK

W W W EEK

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111

IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

5/98

IRF6215STRL [INFINEON]

相关型号：

IRF6215STRLPBF

IRF6215STRR

IRF6215STRRPBF

IRF6216

IRF6216PBF

IRF6216PBF-1

IRF6216TR

IRF6216TRPBF

IRF6216TRPBF-1

IRF6217

IRF6217PBF

IRF6217PBF-1