IRF6618 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF6618 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94726D
IRF6618/IRF6618TR1
HEXFET® Power MOSFET
VDSS
30V
RDS(on) max
Qg
43 nC
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
2.2m @VGS = 10V
Ω
3.4mΩ@VGS = 4.5V
l Low Switching Losses
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount
Techniques
DirectFETISOMETRIC
MT
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6618 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6618 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation
of processors operating at higher frequencies. The IRF6618 has been optimized for parameters that are critical in synchronous buck
converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6618 offers particularly low Rds(on) and high Cdv/
dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
30
Units
V
VDS
Drain-to-Source Voltage
V
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
±20
170
30
GS
I @ TC = 25°C
D
I @ TA = 25°C
A
D
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I @ TA = 70°C
24
D
I
240
2.8
1.8
89
DM
Power Dissipation
Power Dissipation
P @TA = 25°C
D
P @TA = 70°C
D
W
P @TC = 25°C
Power Dissipation
D
Linear Derating Factor
Operating Junction and
0.022
-40 to + 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
210
24
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
A
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
45
Units
Junction-to-Ambient
Junction-to-Ambient
Rθ
Rθ
Rθ
Rθ
Rθ
JA
–––
–––
1.4
JA
Junction-to-Ambient
Junction-to-Case
°C/W
JA
–––
1.0
JC
Junction-to-PCB Mounted
–––
J-PCB
Notes through are on page 9
www.irf.com
1
11/3/04
IRF6618/IRF6618TR1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
30
–––
–––
V
V
/ T
∆
J
∆Β
Breakdown Voltage Temp. Coefficient –––
Static Drain-to-Source On-Resistance –––
–––
23
––– mV/°C Reference to 25°C, ID = 1mA
DSS
mΩ
RDS(on)
1.7
–––
2.2
3.4
VGS = 10V, ID = 30A
GS = 4.5V, ID = 24A
VDS = VGS, ID = 250µA
V
VGS(th)
∆VGS(th)/∆TJ
Gate Threshold Voltage
1.35 1.64 2.35
V
Gate Threshold Voltage Coefficient
–––
–––
–––
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-5.7
–––
–––
–––
–––
–––
–––
43
––– mV/°C
5.0
V
V
DS = 30V, VGS = 0V
DS = 24V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
1.0
150
100
-100
–––
65
µA
VDS = 24V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA VGS = 20V
VGS = -20V
gfs
S
V
DS = 15V, ID = 24A
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
12
–––
–––
23
VDS = 15V
4.0
15
nC VGS = 4.5V
ID = 24A
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
12
–––
–––
–––
2.2
See Fig. 16
19
Qoss
RG
Output Charge
28
nC
V
V
DS = 15V, VGS = 0V
Gate Resistance
Turn-On Delay Time
Rise Time
1.0
21
Ω
td(on)
tr
td(off)
tf
–––
–––
–––
–––
DD = 15V, VGS = 4.5V
71
ID = 24A
Turn-Off Delay Time
Fall Time
27
ns Clamped Inductive Load
8.1
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 5640 –––
––– 1260 –––
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
–––
570
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
30
MOSFET symbol
D
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
ISM
–––
–––
240
(Body Diode)
Diode Forward Voltage
p-n junction diode.
VSD
trr
–––
–––
–––
0.78
43
1.2
65
69
V
T = 25°C, I = 24A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
ns T = 25°C, I = 24A
J F
Qrr
di/dt = 100A/µs
46
nC
2
www.irf.com
IRF6618/IRF6618TR1
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
BOTTOM
BOTTOM
2.7V
2.7V
60µs PULSE WIDTH
≤
60µs PULSE WIDTH
≤
Tj = 25°C
Tj = 150°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
1.5
1.0
0.5
I
= 30A
D
V
= 10V
GS
T
= 150°C
J
T
= 25°C
J
1
V
= 10V
DS
≤60µs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160 180
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
6.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 24A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
V
V
= 24V
= 15V
5.0
4.0
3.0
2.0
1.0
0.0
rss
oss
gd
= C + C
DS
DS
ds
gd
C
iss
C
C
oss
rss
100
1
10
100
0
10
20
30
40
50
60
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs.
Fig 6. Typical Gate Charge vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
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3
IRF6618/IRF6618TR1
1000
100
10
1000.00
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
J
100.00
10.00
1.00
100µsec
1msec
T
= 25°C
J
T
= 25°C
C
Tj = 150°C
Single Pulse
V
= 0V
10msec
100
GS
1
0.10
0
1
10
1000
0.2
0.4
SD
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
180
160
140
120
100
80
I
= 250µA
D
60
40
20
0
-75 -50 -25
0
25
50
75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
J
, Case Temperature (°C)
C
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
CaseTemperature
100
D = 0.50
10
1
0.20
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.1
0.6784
17.299
17.566
9.4701
0.00086
0.57756
8.94
τ
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.01
0.001
0.0001
106
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF6618/IRF6618TR1
6
5
4
3
2
1
0
900
800
700
600
500
400
300
200
100
0
I
= 30A
I
D
D
TOP
9.3A
11A
BOTTOM 24A
T
= 125°C
J
T
= 25°C
J
2
3
4
5
6
7
8
9
10
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
V
Gate -to -Source Voltage (V)
J
GS,
Fig 13. Maximum Avalanche Energy
Fig 12. On-Resistance vs. Gate Voltage
vs. Drain Current
Current Regulator
Same Type as D.U.T.
V
(BR)DSS
50KΩ
15V
t
p
.2µF
12V
.3µF
DRIVER
+
L
V
DS
+
V
DS
D.U.T.
-
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
2
VGS
Ω
0.01
t
p
I
3mA
AS
I
I
D
G
Current Sampling Resistors
Fig 15. Gate Charge Test Circuit
Fig 14. Unclamped Inductive Test Circuit
andWaveform
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
Pulse Width < 1µs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 17. Switching Time Waveforms
Fig 16. Switching Time Test Circuit
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5
IRF6618/IRF6618TR1
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 16. Gate Charge Waveform
6
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IRF6618/IRF6618TR1
DirectFET Outline Dimension, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all
recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
MAX
MIN
CODE
MIN
6.25
4.80
3.85
0.35
0.78
0.88
1.78
0.98
0.63
O.88
2.46
0.59
0.03
0.08
MAX
0.250
0.199
0.156
0.018
0.032
0.036
0.072
0.040
0.026
0.039
0.104
0.028
0.003
0.007
6.35
5.05
3.95
0.45
0.82
0.92
1.82
0.246
0.189
0.152
0.014
0.031
0.035
0.070
A
B
C
D
E
F
NOTE: CONTROLLING
DIMENSIONS ARE IN MM
G
H
J
1.02 0.039
0.67
1.01
2.63
0.70
0.08
0.17
0.025
0.035
0.097
0.023
0.001
0.003
K
L
M
N
P
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7
IRF6618/IRF6618TR1
DirectFET Board Footprint, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
1- Drain
2- Drain
3- Source
4- Source
5- Gate
6- Drain
7- Drain
1
2
6
7
3
4
5
DirectFET Tape & Reel Dimension
(Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6618). For 1000 parts on 7" reel,
order IRF6618TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MIN MAX
IMPERIAL
CODE
MIN
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
MAX
N.C
12.992
0.795
0.504
0.059
3.937
N.C
A
B
C
D
E
F
330.0
20.2
12.8
1.5
177.77
19.06
13.5
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
N.C
0.75
0.53
0.059
2.31
N.C
N.C
N.C
0.520
N.C
12.8
N.C
100.0
N.C
N.C
58.72
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
8
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IRF6618/IRF6618TR1
DirectFET Part Marking
Notes:
ꢀ Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
TC measured with thermal couple mounted to top (Drain) of
part.
Repetitive rating; pulse width limited by max. junction
temperature.
Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 24A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in. square Cu board.
R is measured at TJ of approximately 90°C.
θ
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
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9
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