IRF6622 [INFINEON]
Power MOSFET; 功率MOSFET
| 型号： | IRF6622 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET |
| 文件： | 总10页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97199
IRF6622
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l RoHs Compliant Containing No Lead and Bromide
l Low Profile (<0.6 mm)
VDSS
25V max ±20V max
VGS
RDS(on)
RDS(on)
4.9mΩ@ 10V 6.8mΩ@ 4.5V
l Dual Sided Cooling Compatible
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Ultra Low Package Inductance
11nC
3.8nC 1.6nC 7.1nC 7.7nC
1.8V
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for Control FET Socket
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
DirectFET ISOMETRIC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
Description
The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the
lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile.
The IRF6622 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6622 has been optimized for parameters that are critical in synchronous buck including Rds(on) and
gate charge.
Absolute Maximum Ratings
Max.
25
Parameter
Units
V
VDS
Drain-to-Source Voltage
±20
15
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
12
@ TA = 70°C
@ TC = 25°C
A
59
120
13
DM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
12
20
15
10
5
6.0
5.0
4.0
3.0
2.0
1.0
0.0
I = 12A
V
V
V
= 20V
= 13V
= 5.0V
D
I
= 15A
DS
DS
DS
D
T
= 125°C
J
T
= 25°C
6
J
0
3
4
5
7
8
9
0
2
4
6
8
10
12
14
Q
Total Gate Charge (nC)
G
V
Gate -to -Source Voltage (V)
GS,
Fig 1. Typical On-Resistance Vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.18mH, RG = 25Ω, IAS = 12A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
1
04/04/06
IRF6622
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
55
–––
–––
V
Reference to 25°C, I = 1mA
∆ΒVDSS/∆TJ
RDS(on)
17
––– mV/°C
D
VGS = 10V, ID = 15A c
VGS = 4.5V, ID = 12A c
VDS = VGS, ID = 25µA
4.9
6.8
1.8
-5.9
–––
–––
–––
–––
–––
11
6.3
8.9
mΩ
VGS(th)
Gate Threshold Voltage
2.35
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
VGS = 20V
1.0
150
100
-100
–––
17
µA
nA
S
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = -20V
VDS = 13V, ID = 12A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS = 13V
GS = 4.5V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
2.5
1.6
3.8
3.1
5.4
7.7
1.8
13
–––
–––
–––
–––
–––
–––
3.1
V
nC
ID = 12A
See Fig. 15
VDS = 16V, VGS = 0V
nC
Gate Resistance
Ω
VDD = 13V, VGS = 4.5Vꢁc
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
ID = 12A
Rise Time
87
ns
Clamped Inductive Load
Turn-Off Delay Time
14
Fall Time
5.6
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1450 –––
VDS = 13V
ƒ = 1.0MHz
Output Capacitance
–––
–––
380
210
–––
–––
pF
Reverse Transfer Capacitance
Diode Characteristics
Conditions
MOSFET symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
2.7
showing the
(Body Diode)
A
ISM
integral reverse
Pulsed Source Current
(Body Diode)ꢁd
–––
–––
120
p-n junction diode.
TJ = 25°C, IS = 12A, VGS = 0V c
TJ = 25°C, IF = 12A
di/dt = 500A/µs c
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
10
1.0
15
11
V
ns
nC
Qrr
7.1
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by max. junction temperature.
2
www.irf.com
IRF6622
Absolute Maximum Ratings
Max.
Parameter
Units
2.2
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
Power Dissipation
Power Dissipation
Power Dissipation
W
D
D
D
P
J
1.4
34
270
T
T
T
Peak Soldering Temperature
Operating Junction and
°C
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
58
Units
°C/W
W/°C
RθJA
Junction-to-Ambient
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
–––
–––
3.7
RθJA
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
Linear Derating Factor
–––
0.017
100
10
D = 0.50
0.20
0.10
0.05
Ri (°C/W) τi (sec)
R1
R1
R2
R2
R3
R3
R4
R4
R5
R5
1.620
0.000126
0.02
0.01
τ
1
τ
J τJ
τ
AτA
2.141
0.001354
1τ1
τ
τ
τ
τ
2τ2
3τ3
4τ4
5τ5
22.289 0.375850
20.046 7.41
Ci= τi/Ri
Ci= τi/Ri
0.1
0.01
11.914
99
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
TC measured with thermocouple incontact with top (Drain) of part.
Surface mounted on 1 in. square Cu board, steady state.
ꢀ R is measured at TJ of approximately 90°C.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu (still
air).
www.irf.com
IRF6622
1000
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
10
1
BOTTOM
BOTTOM
2.5V
0.1
2.5V
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
0.01
0.1
1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
V
= 15V
I
= 15A
DS
D
≤
60µs PULSE WIDTH
V
= 10V
GS
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1
V
= 4.5V
GS
0.1
1
2
3
4
5
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics
50
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
GS
T
= 25°C
J
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
rss
oss
gd
40
30
20
10
0
= C + C
ds
gd
C
iss
C
oss
C
rss
0
20
40
60
80
100
120
1
10
, Drain-to-Source Voltage (V)
100
V
DS
I , Drain Current (A)
D
Fig 9. Typical On-Resistance Vs.
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Drain Current and Gate Voltage
4
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IRF6622
1000
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1
1msec
T
T
= 25°C
0.1
0.01
A
J
= 150°C
10msec
V
= 0V
GS
Single Pulse
0
0.2
0.4
V
0.6
0.8
1.0
1.2
0.01 0.10
1.00
10.00
100.00
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
60
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
40
30
20
10
0
I
I
I
I
I
I
= 25µA
= 50µA
= 100µA
= 250µA
= 1mA
D
D
D
D
D
D
= 1.0A
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
J
, Case Temperature (°C)
C
Fig 13. Typical Threshold Voltage vs. Junction
Fig 12. Maximum Drain Current vs. Case Temperature
Temperature
60
I
D
TOP
3.7A
5.3A
50
40
30
20
10
0
BOTTOM 12A
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
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5
IRF6622
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
VGS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
I
AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
td(on)
td(off)
tr
Pulse Width < 1µs
Duty Factor < 0.1%
tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6622
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
G
S
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7
IRF6622
DirectFET Outline Dimension, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
MAX
4.85 0.187
3.95
2.85 0.108
MIN
CODE MIN
MAX
0.191
0.156
0.112
0.018
0.020
0.032
0.036
0.032
N/A
A
B
C
D
E
F
4.75
3.70
2.75
0.35
0.48
0.78
0.88
0.78
N/A
0.146
0.45
0.52
0.82
0.92
0.82
N/A
0.014
0.019
0.031
0.035
0.031
N/A
G
H
J
0.97
K
L
0.037
0.93
2.00
0.48
0.03
0.08
0.038
0.083
0.023
0.003
0.007
2.10 0.079
0.59
0.08
0.17
M
N
P
0.019
0.001
0.003
DirectFET Part Marking
8
www.irf.com
IRF6622
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6622). For 1000 parts on 7" reel,
order IRF6622TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MAX
IMPERIAL
CODE
MIN
MIN
MAX
N.C
MIN
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
100.0
N.C
N.C
58.72
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Loaded Tape Feed Direction
DIMENSIONS
NOTE: CONTROLLING
DIMENSIONS IN MM
METRIC
MAX
8.10
IMPERIAL
CODE
MIN
MAX
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.158
0.197
0.059
0.059
0.319
0.161
0.484
0.219
0.165
0.205
N.C
4.10
12.30
5.55
4.20
5.20
G
H
N.C
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/06
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9
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
相关型号：
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Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
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IRF6623TRPBF
Power Field-Effect Transistor, 16A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
INFINEON
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