IRF6635TR1 [INFINEON]
Power Field-Effect Transistor, 32A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3;
| 型号： | IRF6635TR1 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 32A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3 开关 脉冲 晶体管 |
| 文件： | 总9页 (文件大小：626K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96981F
IRF6635
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l RoHs compliant containing no lead or bromide
l Low Profile (<0.7 mm)
VDSS
30V max ±20V max
VGS
RDS(on)
RDS(on)
1.3mΩ@ 10V 1.8mΩ@ 4.5V
l Dual Sided Cooling Compatible
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Ultra Low Package Inductance
47nC
17nC
4.7nC
48nC
29nC
1.8V
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
l Optimized for SyncFET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
DirectFET ISOMETRIC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6635 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor
phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing meth-
ods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improv-
ing previous best thermal resistance by 80%.
The IRF6635 balances industry leading on-state resistance while minimizing gate charge along with ultra low package induc-
tance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high
efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6635
has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Max.
30
Parameter
Units
V
VDS
Drain-to-Source Voltage
±20
32
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
25
@ TA = 70°C
@ TC = 25°C
A
180
250
200
25
DM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
10
8
6.0
5.0
4.0
3.0
2.0
1.0
0.0
I = 25A
D
I
= 32A
V
= 24V
= 15V
D
DS
V
DS
6
4
T
= 125°C
J
2
T
3
= 25°C
4
J
0
0
1
2
5
6
7
8
9
10
0
10
20
30
40
50
60
Q
Total Gate Charge (nC)
G
V
Gate -to -Source Voltage (V)
GS,
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.63mH, RG = 25Ω, IAS = 25A.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
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1
11/16/05
IRF6635
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
45
–––
–––
V
Reference to 25°C, I = 1mA
∆ΒVDSS/∆TJ
RDS(on)
24
––– mV/°C
D
VGS = 10V, ID = 32A g
VGS = 4.5V, ID = 25A g
VDS = VGS, ID = 250µA
1.3
1.8
1.8
-6.1
–––
–––
–––
–––
–––
47
1.8
2.4
mΩ
VGS(th)
Gate Threshold Voltage
2.35
V
∆VGS(th)/∆TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
VDS = 24V, VGS = 0V
1.0
150
100
-100
–––
71
µA
nA
S
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
VGS = -20V
VDS = 15V, ID = 25A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 15V
VGS = 4.5V
ID = 25A
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
12
–––
–––
4.7
17
nC
13
–––
–––
–––
–––
–––
–––
–––
–––
See Fig. 15
22
VDS = 16V, VGS = 0V
29
nC
Gate Resistance
1.0
21
Ω
VDD = 16V, VGS = 4.5Vꢁg
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
ID = 25A
Rise Time
13
Clamped Inductive Load
See Fig. 16 & 17
VGS = 0V
Turn-Off Delay Time
33
ns
Fall Time
8.3
Ciss
Coss
Crss
Input Capacitance
––– 5970 –––
––– 1280 –––
VDS = 15V
Output Capacitance
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
–––
600
–––
Diode Characteristics
Conditions
MOSFET symbol
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
–––
–––
110
250
showing the
(Body Diode)
A
ISM
integral reverse
Pulsed Source Current
(Body Diode)ꢁe
p-n junction diode.
TJ = 25°C, IS = 25A, VGS = 0V g
TJ = 25°C, IF = 25A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
20
1.0
30
72
V
ns
nC
Qrr
di/dt = 500A/µs gꢁꢁSee Fig. 18
48
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
ꢀ Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF6635
Absolute Maximum Ratings
Max.
Parameter
Units
2.8
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
Power Dissipation
Power Dissipation
Power Dissipation
W
D
D
D
P
J
1.8
89
270
T
T
T
Peak Soldering Temperature
Operating Junction and
°C
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
45
Units
°C/W
W/°C
Rθ
Rθ
Rθ
Rθ
Rθ
Junction-to-Ambient
JA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
–––
–––
1.4
JA
JA
–––
1.0
JC
Junction-to-PCB Mounted
Linear Derating Factor
–––
J-PCB
0.022
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
Ri (°C/W) τi (sec)
R4
τ
0.6784
17.299
17.566
9.4701
0.001268
0.033387
0.508924
11.19309
τ
J τJ
AτA
τ
1 τ1
0.1
0.01
τ
τ
τ
2 τ2
3 τ3
4 τ4
Ci= τi/Ri
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
TC measured with thermocouple incontact with top (Drain) of part.
Surface mounted on 1 in. square Cu board, steady state.
R is measured at TJ of approximately 90°C.
Used double sided cooling , mounting pad.
θ
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Mounted on minimum
Surface mounted on 1 in. square Cu
Mounted to a PCB with a
footprint full size board with
metalized back and with small
clip heatsink (still air)
3
board (still air).
thin gap filler and heat sink.
(still air)
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IRF6635
1000
1000
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
10
BOTTOM
BOTTOM
100
2.5V
2.5V
1
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 150°C
≤
10
1
0.1
1
10
100
1000
0.1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
1000
100
10
1.5
V
= 15V
I
= 32A
D
DS
≤
60µs PULSE WIDTH
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1.0
0.5
V
V
= 4.5V
= 10V
GS
GS
1
0.1
1
2
3
4
-60 -40 -20
0
20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics
30
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
T
= 25°C
J
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
25
20
15
10
5
rss
oss
gd
Vgs = 3.0V
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
= C + C
ds
gd
C
iss
C
oss
C
rss
0
100
20
60
100
140
180
220
260
1
10
, Drain-to-Source Voltage (V)
100
V
DS
I , Drain Current (A)
D
Fig 9. Normalized Typical On-Resistance vs.
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Drain Current and Gate Voltage
4
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IRF6635
OPERATION IN THIS AREA
LIMITED BY R (on)
1000
100
10
1000
100
10
1
DS
100µsec
10msec
1msec
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
100msec
1
T
T
= 25°C
A
J
= 150°C
V
= 0V
GS
Single Pulse
0.1
0
0.01
0.10
1.00
10.00
100.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
V
DS
SD
Fig11. Maximum Safe Operating Area
Fig 10. Typical Source-Drain Diode Forward Voltage
2.2
200
175
150
125
100
75
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 250µA
D
50
25
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
J
, Case Temperature (°C)
C
Fig 13. Threshold Voltage vs. Temperature
Fig 12. Maximum Drain Current vs. Case Temperature
900
800
700
600
500
400
300
200
100
0
I
D
TOP
9.1A
11A
BOTTOM 25A
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
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5
IRF6635
Current Regulator
Same Type as D.U.T.
Id
Vds
50KΩ
Vgs
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
VGS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
I
AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
td(on)
td(off)
tr
Pulse Width < 1µs
Duty Factor < 0.1%
tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6635
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
•
di/dt controlled by RG
• Driver same type as D.U.T.
Re-Applied
Voltage
RG
+
-
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
DirectFET Substrate and PCB Layout, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
S
S
G
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7
IRF6635
DirectFET Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
IMPERIAL
METRIC
CODE
MAX
MIN
MIN
6.25
4.80
3.85
0.35
0.68
0.68
1.38
0.80
0.38
0.88
2.28
0.48
0.03
0.08
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.056
0.033
0.017
0.039
0.095
0.023
0.003
0.007
A
B
C
D
E
F
0.246
0.189
0.152
0.014
0.027
0.027
0.054
0.032
0.015
0.035
0.090
0.019
0.001
0.003
6.35
5.05
3.95
0.45
0.72
0.72
1.42
0.84
0.42
1.01
2.41
0.59
0.08
0.17
G
H
J
K
L
M
N
P
DirectFET Part Marking
8
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IRF6635
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6635). For 1000 parts on 7" reel,
order IRF6635TR1
REEL DIMENSIONS
STANDARD OPTION (QTY 4800)
TR1 OPTION (QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MIN
MAX
IMPERIAL
CODE
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
A
B
C
D
E
F
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
100.0
N.C
N.C
58.72
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/05
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9
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