IRF6648_技术文档

PD - 97043

IRF6648

DirectFET Power MOSFET

Typical values (unless otherwise specified)

l RoHs Compliant Containing No Lead and Bromide

l Low Profile (<0.7 mm)

V_DSS

V_GS

R_DS(on)

Q_{g tot}Q_gd

l Dual Sided Cooling Compatible

l Ultra Low Package Inductance

60V max ±20V max

5.5mΩ@ 10V 36nC 14nC

l Optimized for High Frequency Switching

l Optimized for Synchronous Rectification for 5V

to 12V outputs

l Ideal for 24V input Primary Side Forward Converters

l Low Conduction Losses

l Compatible with Existing Surface Mount Techniques

DirectFET

ISOMETRIC

MN

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

SH

SJ

SP

MZ

MN

Description

The IRF6648 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFET^TMpackaging to

achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET

package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,

infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods

and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving

previous best thermal resistance by 80%.

The IRF6648 is an optimized switch for use in synchronous rectification circuits with 5-12Vout, and is also ideal for use as a

primary side switch in 24Vin forward converters. The reduced total losses in the device coupled with the high level of thermal

performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this

device ideal for high performance isolated DC-DC converters.

Absolute Maximum Ratings

Max.

60

Parameter

Units

V

V_DS

Drain-to-Source Voltage

±20

86

V

Gate-to-Source Voltage

GS

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

I

@ T_C= 25°C

D

69

@ T_C= 70°C

D

I_DM

260

81

A

I

@ T_C= 25°C

@ T_C= 70°C

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

S

52

I_SM

260

Notes:

T_Cmeasured with thermocouple mounted to top (Drain) of part.

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Repetitive rating; pulse width limited by max. junction temperature.

www.irf.com

1

08/30/05

IRF6648

Electrical Characteristic @ T_J= 25°C (unless otherwise specified)

Conditions

V_GS= 0V, I_D= 250µA

Parameter

Min. Typ. Max. Units

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

60

–––

V

V/°C

mΩ

V

Reference to 25°C, I_D= 1mA

∆ΒV_DSS/∆T_J

R_DS(on)

––– 0.076 –––

V_GS= 10V, I_D= 17A g

–––

3.0

5.5

4.0

-11

–––

36

7.0

4.9

V_DS= V_GS, I_D= 150µA

V_GS(th)

∆V_GS(th)/∆T_J

I_DSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

–––

31

––– mV/°C

V_DS= 60V, V_GS= 0V

20

250

100

-100

–––

50

µA

nA

S

V_DS= 48V, V_GS= 0V, T_J= 125°C

V_GS= 20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

V_GS= -20V

V_DS= 10V, I_D= 17A

gfs

Q_g

–––

V_DS= 30V

Q_gs1

Q_gs2

Q_gd

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

7.5

2.7

14

–––

21

V_GS= 10V

I_D= 17A

nC

Q_godr

Q_sw

Q_oss

R_{G (Internal)}

t_d(on)

t_r

12

–––

See Fig. 14

17

V_DS= 16V, V_GS= 0V

21

nC

Gate Resistance

1.0

16

Ω

V_DD= 30V, V_GS= 10Vꢁg

Turn-On Delay Time

I_D= 17A

Rise Time

29

t_d(off)

t_f

R_G= 6.2Ω

See Fig. 16

V_GS= 0V

Turn-Off Delay Time

28

ns

Fall Time

13

C_iss

Input Capacitance

––– 2120 –––

V_DS= 25V

ƒ = 1.0MHz

C_oss

C_rss

C_oss

Output Capacitance

–––

600

170

–––

pF

Reverse Transfer Capacitance

Output Capacitance

V_GS= 0V, V_DS= 1.0V, f=1.0MHz

––– 2450 –––

––– 440 –––

V_GS= 0V, V_DS= 48V, f=1.0MHz

Output Capacitance

Avalanche Characteristics

Parameter

Conditions

Min. Typ. Max. Units

E_AS

T_J= 25°C, I_S= 34A, R_G= 25Ω

L = 0.082mH. See Fig. 13

Single Pulse Avalanche Energy

–––

47

mJ

Diode Characteristics

Conditions

T_J= 25°C, I_S= 17A, V_GS= 0V g

T_J= 25°C, I_F= 17A, V_DD= 30V

di/dt = 100A/µs g

Parameter

Min. Typ. Max. Units

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

1.3

47

56

V

31

ns

nC

Q_rr

37

Notes:

ꢀPulse width ≤ 400µs; duty cycle ≤ 2%.

2

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IRF6648

Absolute Maximum Ratings

Max.

Parameter

Units

2.8

P

@T_A= 25°C

@T_A= 70°C

@T_C= 25°C

Power Dissipation

W

D

P

J

1.8

89

270

T

Peak Soldering Temperature

Operating Junction and

°C

-40 to + 150

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

12.5

–––

1.0

Max.

45

Units

R_θ

Junction-to-Ambient

JA

Junction-to-Ambient

Junction-to-Case

–––

1.4

°C/W

JA

JC

Junction-to-PCB Mounted

–––

J-PCB

10

1

D = 0.50

0.20

0.10

0.05

0.02

0.01

R₁

R₂

R₃

0.1

τi (sec)

Ri (°C/W)

τ

^Jτ_J

τ

^Cτ_C

0.17199 0.000044

0.67673 0.001660

0.54961 0.007649

τ

¹τ₁

τ

²τ₂

³τ₃

Ci= τi/Ri

0.01

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 1. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Notes:

R is measured at T_Jof approximately 90°C.

Surface mounted on 1 in. square Cu, steady state (still air).

Used double sided cooling, mounted on 1 in. square Cu board

PCB with small clip heatsink (still air).

θ

Note

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3

IRF6648

1000

100

10

VGS

15V

10V

8.0V

7.0V

6.0V

VGS

15V

TOP

10V

8.0V

7.0V

6.0V

BOTTOM

100

10

1

6.0V

60µs PULSE WIDTH

Tj = 150°C

≤

60µs PULSE WIDTH

Tj = 25°C

≤

1

0.1

1

10

0.1

1

10

V

, Drain-to-Source Voltage (V)

DS

V

, Drain-to-Source Voltage (V)

DS

Fig 3. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

100

10

2.0

1.5

1.0

0.5

V

= 10V

I

= 86A

D

DS

V

= 10V

≤

60µs PULSE WIDTH

GS

T

= 150°C

= 25°C

= -40°C

J

T

1

0.1

2

4

6

8

10

-60 -40 -20

0

20 40 60 80 100 120 140 160

T

J

, Junction Temperature (°C)

V

, Gate-to-Source Voltage (V)

GS

Fig 5. Normalized On-Resistance vs. Temperature

Fig 4. Typical Transfer Characteristics

10000

1000

100

12.0

V

= 0V,

= C

f = 1 MHZ

GS

I

= 17A

D

C

+ C , C

SHORTED

iss

gs

gd

ds

= C

10.0

8.0

6.0

4.0

2.0

0.0

rss

oss

gd

V

= 48V

= 30V

DS

= C + C

ds

gd

C

iss

C

oss

C

rss

1

10

, Drain-to-Source Voltage (V)

100

0

5

10 15 20 25 30 35 40

Q , Total Gate Charge (nC)

V

DS

G

Fig 7. Typical Total Gate Charge vs

Fig 6. Typical Capacitance vs.Drain-to-Source Voltage

Gate-to-Source Voltage

4

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IRF6648

30

25

20

15

10

5

60

50

40

30

20

10

0

T

= 25°C

I

= 17A

J

D

Vgs = 7.0V

Vgs = 8.0V

Vgs = 10V

Vgs = 15V

T

= 125°C

J

T

= 25°C

J

0

20

40

60

80

100

4

6

8

10

12

14

16

I , Drain Current (A)

V

Gate -to -Source Voltage (V)

D

GS,

Fig 9. Typical On-Resistance vs. Drain Current

Fig 8. Typical On-Resistance vs. Gate Voltage

1000

6.0

T

= 150°C

= 25°C

= -40°C

J

100

10

1

5.0

4.0

I

= 150µA

= 250µA

= 1.0mA

= 1.0A

D

3.0

2.0

V

= 0V

1.2

GS

0

0.0

0.2

0.4

0.6

0.8

1.0

1.4

-75 -50 -25

0

25 50 75 100 125 150

T , Temperature ( °C )

J

V

, Source-to-Drain Voltage (V)

SD

Fig 10. Typical Source-Drain Diode Forward Voltage

Fig 11. Typical Threshold Voltage vs.

Junction Temperature

200

180

160

140

120

100

80

1000

OPERATION IN THIS AREA

I

TOP

D

LIMITED BY R (on)

DS

12A

18A

100µsec

1msec

100

10

1

BOTTOM 34A

10msec

60

40

Tc = 25°C

Tj = 150°C

Single Pulse

20

0

0.1

25

50

75

100

125

150

0

1

10

100

Starting T , Junction Temperature (°C)

V

, Drain-to-Source Voltage (V)

J

DS

Fig12. Maximum Safe Operating Area

Fig 13. Maximum Avalanche Energy vs. Drain Current

www.irf.com

5

IRF6648

Current Regulator

Same Type as D.U.T.

Id

Vds

50KΩ

Vgs

.2µF

.3µF

12V

+

V

DS

D.U.T.

-

Vgs(th)

V

GS

3mA

I

Qgs1

Qgs2

Qgd

Qgodr

G

D

Current Sampling Resistors

Fig 14a. Gate Charge Test Circuit

Fig 14b. Gate Charge Waveform

V

(BR)DSS

15V

t

p

DRIVER

L

V

DS

D.U.T

AS

R

G

+

-

V

DD

I

A

V_GS

20V

0.01

Ω

t

p

I

AS

Fig 15a. Unclamped Inductive Test Circuit

Fig 15b. Unclamped Inductive Waveforms

R_D

V_DS

90%

V_GS

D.U.T.

R_G

+

-

V_DD

10%

V_GS

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

t_d(on)

t_d(off)

t_r

t_f

Fig 16a. Switching Time Test Circuit

Fig 16b. Switching Time Waveforms

6

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IRF6648

Driver Gate Drive

P.W.

Period

D.U.T

Period

D =

+

*

=10V

V

GS

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

V_DD

• di/dt controlled by R_G

Re-Applied

Voltage

R_G

+

-

• Driver same type as D.U.T.

Body Diode

Inductor Current

Forward Drop

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

I

SD

Ripple

≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 17. Diode Reverse Recovery Test Circuit for N-Channel

HEXFET^®Power MOSFETs

DirectFET Substrate and PCB Layout, MN Outline

(Medium Size Can, N-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

D

S

G

G = GATE

D = DRAIN

S = SOURCE

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7

IRF6648

DirectFET Outline Dimension, MN Outline

(Medium Size Can, N-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

DirectFET Part Marking

8

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IRF6648

DirectFET Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts. (ordered as IRF6648). For 1000 parts on 7" reel,

order IRF6648TR1

REEL DIMENSIONS

STANDARD OPTION (QTY 4800)

TR1 OPTION (QTY 1000)

METRIC

MAX

IMPERIAL

METRIC

MIN MAX

IMPERIAL

CODE

MIN

12.992

0.795

0.504

0.059

3.937

N.C

MAX

N.C

MIN

6.9

MAX

N.C

0.50

N.C

0.53

N.C

MIN

A

B

C

D

E

F

330.0

20.2

12.8

1.5

N.C

13.2

N.C

18.4

14.4

15.4

177.77 N.C

0.75

0.53

0.059

2.31

N.C

19.06

13.5

1.5

N.C

0.520

N.C

12.8

N.C

100.0

N.C

58.72

N.C

0.724

0.567

0.606

13.50

12.01

G

H

0.488

0.469

0.47

12.4

11.9

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.08/05

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9


型号：	IRF6648
厂家：	Infineon
描述：	DirectFET Power MOSFET DirectFET功率MOSFET 晶体晶体管功率场效应晶体管开关脉冲瞄准线
文件：	总9页 (文件大小：262K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRF6648 [INFINEON]

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