IRF7313UTRPBF [INFINEON]
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8;
| 型号： | IRF7313UTRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 局域网 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96072A
IRF7313UPbF
HEXFET® Power MOSFET
ꢃ Generation V Technology
ꢃ Ultra Low On-Resistance
ꢃ Dual N-Channel MOSFET
ꢃ Surface Mount
ꢃ Fully Avalanche Rated
ꢃ Lead-Free
1
2
8
S1
G1
D1
VDSS = 30V
7
D1
3
4
6
S2
D2
5
G2
D2
RDS(on) = 0.029Ω
Description
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
VDS
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
30
± 20
6.5
V
VGS
TA = 25°C
TA = 70°C
Continuous Drain Currentꢂ
ID
5.2
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
IDM
IS
30
2.5
TA = 25°C
TA = 70°C
2.0
1.3
Maximum Power Dissipation ꢂ
P
D
W
Single Pulse Avalanche Energy ꢀ
Avalanche Current
EAS
IAR
82
mJ
A
4.0
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢁ
Junction and Storage Temperature Range
EAR
0.20
5.8
mJ
V/ ns
°C
dv/dt
TJ,TSTG
-55 to + 150
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambientꢂ
RθJA
62.5
°C/W
www.irf.com
1
09/14/06
IRF7313UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.023 0.029
––– 0.032 0.046
1.0 ––– –––
––– 14 –––
––– ––– 1.0
––– ––– 25
––– ––– 100
––– ––– -100
VGS = 10V, ID = 5.8A ꢂ
GS = 4.5V, ID = 4.7A ꢂ
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
VGS(th)
gfs
Gate Threshold Voltage
V
S
VDS = VGS, ID = 250µA
VDS = 15V, ID = 5.8A
Forward Transconductance
V
DS = 24V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
VDS = 24V, VGS = 0V, TJ = 55°C
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
––– 22
33
ID = 5.8A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.6 3.9
––– 6.4 9.6
nC VDS = 15V
VGS = 10V, See Fig. 10 ꢂ
––– 8.1
––– 8.9
––– 26
––– 17
12
13
39
26
VDD = 15V
ID = 1.0A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 15Ω ꢂ
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 650 –––
––– 320 –––
––– 130 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
––– ––– 2.5
A
G
ISM
Pulsed Source Current
(Body Diode) ꢀ
integral reverse
––– ––– 30
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– 0.78 1.0
V
TJ = 25°C, IS = 1.7A, VGS = 0V ꢁ
––– 45
––– 58
68
87
ns
TJ = 25°C, IF = 1.7A
Qrr
nC di/dt = 100A/µs ꢁ
Notes:
ꢁ Repetitive rating; pulse width limited by
ꢂ ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. ( See fig. 11 )
ꢃ Starting TJ = 25°C, L = 10mH
RG = 25Ω, IAS = 4.0A.
ꢄ Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
2
www.irf.com
IRF7313UPbF
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
3.0V
3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
A
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
100
TJ = 25°C
TJ = 150°C
T = 150°C
J
10
T = 25°C
J
VDS = 10V
20µs PULSE WIDTH
V
= 0V
GS
A
1
5.0A
3.0
3.5
4.0
4.5
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VGS , Gate-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
SD
Fig 4. Typical Source-Drain Diode
Fig 3. Typical Transfer Characteristics
Forward Voltage
www.irf.com
3
IRF7313UPbF
2.0
0.040
0.036
0.032
0.028
0.024
0.020
5.8A
=
I
D
V
= 4.5V
GS
1.5
1.0
0.5
0.0
V
= 10V
GS
V
= 10V
GS
A
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
0
10
20
30
40
T , Junction Temperature ( C)
J
I
, Drain Current (A)
D
Fig 5. Normalized On-Resistance
Fig 6. Typical On-Resistance Vs. Drain
Vs. Temperature
Current
200
0.12
I
D
TOP
1.8A
3.2A
BOTTOM 4.0A
0.10
0.08
0.06
0.04
0.02
0.00
160
120
80
40
0
I
= 5.8A
D
A
A
0
3
6
9
12
15
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Typical On-Resistance Vs. Gate
Fig 8. Maximum Avalanche Energy
Voltage
Vs. Drain Current
4
www.irf.com
IRF7313UPbF
1200
900
600
300
0
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
I = 5.8A
D
= C + C
,
C
SHORTED
gs
gd
gd
ds
V
= 15V
DS
= C
= C + C
ds
gd
C
iss
C
oss
C
rss
4
0
A
0
10
20
30
40
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
t
2
Notes:
1. Duty factor D = t / t
SINGLE PULSE
1
(THERMAL RESPONSE)
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7313UPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MIN
.0532
MILLIMETERS
DIM
A
D
B
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040
b
c
.013
8
7
2
6
5
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
E
0.25 [.010]
A
.1497
1
3
4
.050 BASIC
1.27 BASIC
0.635 BASIC
e 1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
FOOTPRINT
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
8X 0.72 [.028]
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
6
www.irf.com
IRF7313UPbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2006
www.irf.com
7
相关型号：
IRF7314TR
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
INFINEON
IRF7316GPBF
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8
INFINEON
©2020 ICPDF网 联系我们和版权申明