IRF7342D2PBF [INFINEON]
FETKY MOSFET & Schottky Diode; FETKY MOSFET和肖特基二极管
| 型号： | IRF7342D2PBF |
| 厂家： | 
Infineon |
| 描述： | FETKY MOSFET & Schottky Diode |
| 文件： | 总11页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 95299
IRF7342D2PbF
FETKYTM MOSFET & Schottky Diode
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal For Buck Regulator Applications
l P-Channel HEXFET®
l Low VF Schottky Rectifier
l SO-8 Footprint
1
2
3
4
8
7
K
K
A
VDSS = -55V
A
6
5
RDS(on) = 105mΩ
Schottky Vf = 0.61V
S
D
D
G
l Lead-Free
Top View
Description
The FETKYTM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
SO-8
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Parameter
Maximum
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current À
-3.4
A
-2.7
-27
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
2.0
W
Power Dissipation
1.3
Linear Derating Factor
16
mW/°C
V
VGS
Gate-to-Source Voltage
± 20
dv/dt
Peak Diode Recovery dv/dt Á
Junction and Storage Temperature Range
-5.0
V/ns
°C
TJ, TSTG
-55 to +150
ThermalResistance
Symbol
Parameter
Typ.
Max.
Units
RθJL
Junction-to-DrainLead, MOSFET
Junction-to-Ambient , MOSFET
Junction-to-Ambient , SCHOTTKY
–––
20
RθJA
RθJA
–––
–––
62.5
62.5
°C/W
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 400µs – duty cycle ≤ 2%
Surface mounted on 1 inch square copper board, t ≤ 10sec.
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1
10/13/04
IRF7342D2PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-55 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA
–––
95
105
VGS = -10V, ID = -3.4A
VGS = -4.5V, ID = -2.7A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -3.1A
VDS = -44V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 70°C
VGS = -20V
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
––– 150 170
-1.0 ––– –––
3.3 ––– –––
––– ––– -2.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = 20V
Qg
––– 26
38
ID = -3.1A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 3.0 4.5
nC VDS = -44V
VGS = -10V, See Fig. 6 & 14
––– 8.4
––– 14
––– 10
––– 43
––– 22
13
22
15
64
32
VDD = -28V
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = -10V,
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 690 –––
––– 210 –––
Output Capacitance
pF VDS = -25V
ƒ = 1.0MHz, See Fig. 5
ReverseTransferCapacitance
–––
86
–––
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current(Body Diode) ––– ––– -2.0
A
ISM
VSD
trr
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
––– ––– -27
––– ––– -1.2
V
TJ = 25°C, IS = -2.0A, VGS = 0V
TJ = 25°C, IF = -2.0A
Reverse Recovery Time (Body Diode) ––– 54
80
ns
Qrr
Reverse Recovery Charge
––– 85 130
nC di/dt = 100A/µs
Schottky Diode Maximum Ratings
Parameter
Max. Units
Conditions
If (av)
Max.AverageForwardCurrent
3.0
50% Duty Cycle. Rectangular Wave, TA = 57°C
See Fig. 21
A
ISM
Max. peak one cycle Non-repetitive
Surgecurrent
490
70
5µs sine or 3µs Rect. pulse
Following any rated
A
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
Schottky Diode Electrical Specifications
Parameter
Max. Forward Voltage Drop
Max. Units
0.61
Conditions
If = 3.0A, Tj = 25°C
Vfm
0.76
V
If = 6.0A, Tj = 25°C
If = 3.0A, Tj = 125°C
If = 6.0A, Tj = 125°C
0.53
0.65
Vrrm
Irm
Max. Working Peak Reverse Voltage
Max.ReverseLeakageCurrent
60
V
2.0 mA
30
Vr = 60V
Tj = 25°C
Tj = 125°C
Ct
Max. Junction Capacitance
145
pF
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
2
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IRF7342D2PbF
Power Mosfet Characteristics
100
10
1
100
TOP
VGS
VGS
-15V
-10V
- 6.0V
-5.5V
-4.5V
-3.5V
-3.0V
TOP
-15V
-10V
-6.0V
-5.0V
-4.5V
-3.5V
-3.0V
10
BOTTOM -2.5V
BOTTOM - 2.5V
1
-2.5V
-2.5V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
-V , Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.0
-3.4 A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
J
V
= -25V
DS
V
=-10V
GS
20µs PULSE WIDTH
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2.0
3.0
4.0
5.0 6.0 7.0
T , Junction Temperature ( C)
J
-V , Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRF7342D2PbF
Power Mosfet Characteristics
1000
20
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
=
-3.1A
GS
C
= C + C
V
V
V
=-48V
=-30V
=-12V
iss
gs
gd ,
DS
DS
DS
C
= C
rss
gd
C
= C + C
800
600
400
200
0
oss
ds
gd
16
12
8
C
iss
C
4
oss
C
rss
0
1
10
100
0
10
20
30
40
-V , Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
°
T = 150 C
J
°
T = 25 C
J
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.2
0.1
0.2
0.1
0.4
0.6
0.8
1.0
1.4
1
10
100
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRF7342D2PbF
Power Mosfet Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
CaseTemperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
P
2
DM
0.01
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7342D2PbF
Power Mosfet Characteristics
0.25
0.20
0.15
0.35
0.30
VGS = -4.5V
0.25
0.20
0.15
0.10
0.05
I
= -3.4A
D
0.10
0.05
VGS = -10V
3.0
5.0
-V
7.0
9.0
11.0
13.0
15.0
0.0
4.0
8.0
12.0
16.0
Gate -to -Source Voltage (V)
-I , Drain Current ( A )
GS,
D
Fig 13. Typical On-Resistance Vs.
Fig 12. Typical On-Resistance Vs.
DrainCurrent
GateVoltage
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRF7342D2PbF
Power Mosfet Characteristics
100
80
60
40
20
0
2.0
1.8
1.6
1.4
1.2
1.0
I
= -250µA
D
0.001
0.010
0.100
1.000
10.000
100.000
-75 -50 -25
0
25
50
75 100 125 150
Time (sec)
T , Temperature ( °C )
J
Fig 15. Typical Vgs(th) Vs.
Fig 16. Typical Power Vs. Time
JunctionTemperature
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IRF7342D2PbF
SchottkyDiodeCharacteristics
100
100
T = 150°C
J
10
1
125°C
100°C
75°C
0.1
50°C
25°C
0.01
0.001
T = 150°C
J
T = 125°C
J
0
10
20
30
40
50
60
10
T = 25°C
J
Reverse Voltage - V (V)
R
Fig. 18 - Typical Values of
Reverse Current Vs. Reverse Voltage
1000
T = 25°C
J
100
1
0
0.4
0.8
1.2
1.6
2
2.4
2.8
Forward Voltage Drop - V
(V)
FM
10
0
10
20
30
40
50
60
Fig. 17 - Maximum Forward Voltage Drop
Characteristics
Reverse Voltage - V (V)
R
Fig. 19 - Typical Junction Capacitance
Vs. Reverse Voltage
8
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IRF7342D2PbF
SchottkyDiodeCharacteristics
100
10
1
D = 0.50
0.20
0.10
0.05
P
0.02
0.01
DM
t
1
t
2
Notes:
1. Duty factor D =t / t
SINGLE PULSE
(THERMAL RESPONSE)
1
2
2. Peak T =P
J
x Z
+ T
DM
thJA A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
180
160
140
120
100
80
R
= 62.5 °C/W
thJA
DC
60
see note (4)
40
quare wave ( D = 0.50)
S
20
80 % Rated V applied
R
0
0
1
2
3
4
5
6
Average Forward Current - I
F(AV)
(A)
Fig.21 - Maximum Allowable Ambient
Temp. Vs. Forward Current
Note(4)Formulaused:TC =TJ -(Pd+PdREV)xRthJA
;
Pd=ForwardPowerLoss=IF(AV) xVFM @(IF(AV) /D) ;
PdREV =InversePowerLoss=VR1 xIR (1-D); IR @VR1=80%ratedVR
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IRF7342D2PbF
SO-8 (Fetky) Package Outline
INCHES
MIN MAX
.0532 .0688
MILLIMET E RS
DIM
A
D
B
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040 .0098
b
c
D
E
.013
.0075 .0098
.189 .1968
.020
8
1
7
2
6
3
5
6
H
0.25 [.010]
A
.1497 .1574
.050 BASIC
4
e
1.27 BAS IC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284 .2440
.0099 .0196
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
.016
0°
.050
8°
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 (Fetky) Part Marking Information
EXAMPLE: THIS IS AN IRF7807D1 (FETKY)
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW= WEEK
A= ASSEMBLY SITE CODE
XXXX
807D1
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
10
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IRF7342D2PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
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11
相关型号：
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Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
INFINEON
IRF7342TRPBF-1
Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
INFINEON
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