IRF7342QPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7342QPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总7页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96109
IRF7342QPbF
HEXFET® Power MOSFET
O
O
O
O
O
O
O
O
Advanced Process Technology
Ultra Low On-Resistance
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
1
2
3
4
8
S1
G1
S2
D1
VDSS = -55V
7
D1
6
D2
5
D2
G2
RDS(on) = 0.105Ω
Top View
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a
wide variety of other applications.
SO-8
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain- Source Voltage
-55
V
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
-3.4
-2.7
A
-27
PD @TC = 25°C
PD @TC = 70°C
2.0
W
Power Dissipation
1.3
Linear Derating Factor
0.016
± 20
30
W/°C
VGS
Gate-to-Source Voltage
V
V
VGSM
EAS
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy
114
dv/dt
TJ, TSTG
Peak Diode Recovery dv/dt
5.0
V/ns
°C
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Maximum Junction-to-Ambientꢀ
Typ.
–––
Max.
62.5
Units
°C/W
RθJA
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1
07/23/07
IRF7342QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-55 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.095 0.105
––– 0.150 0.170
-1.0 ––– –––
3.3 ––– –––
––– ––– -2.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -10V, ID = -3.4A
RDS(on)
StaticDrain-to-SourceOn-Resistance
Ω
VGS = -4.5V, ID = -2.7A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -3.1A
VDS = -55V, VGS = 0V
VDS = -55V, VGS = 0V, TJ = 55°C
VGS = -20V
VGS(th)
gfs
GateThresholdVoltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-SourceLeakageCurrent
µA
nA
Gate-to-SourceForwardLeakage
Gate-to-SourceReverseLeakage
Total Gate Charge
VGS = 20V
Qg
––– 26
38
ID = -3.1A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 3.0 4.5
nC VDS = -44V
VGS = -10V, See Fig. 10
––– 8.4
––– 14
––– 10
––– 43
––– 22
13
22
15
64
32
VDD = -28V
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 16Ω,
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 690 –––
––– 210 –––
––– 86 –––
Output Capacitance
pF
VDS = -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
ContinuousSourceCurrent
(BodyDiode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
-2.0
A
G
ISM
Pulsed Source Current
(Body Diode)
integralreverse
––– ––– -1.2
––– 54 80
––– 85 130
-27
p-njunctiondiode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
V
TJ = 25°C, IS = -2.0A, VGS = 0V
ns
TJ = 25°C, IF = -2.0A
Qrr
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Starting TJ = 25°C, L = 20mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -3.4A. (See Figure 8)
ꢀ When mounted on 1 inch square copper board, t<10 sec
2
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IRF7342QPbF
100
10
1
100
10
1
VGS
-15V
-12V
-10V
-8.0V
-4.5VV
-4.0V
-3.5V
VGS
-15V
-12V
-10V
-8.0V
--4.5V
-4.0V
-3.5V
TOP
TOP
BOTTOM -3.0V
BOTTOM -3.0V
-3.0V
-3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 150 C
J
°
T = 25 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
100
°
T = 25 C
J
°
T = 150 C
J
°
T = 150 C
J
10
°
T = 25 C
J
1
V
= -25V
DS
V
= 0 V
GS
1.2
20µs PULSE WIDTH
0.1
0.2
1
0.4
0.6
0.8
1.0
1.4
3
4
5
6 7
-V ,Source-to-Drain Voltage (V)
SD
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
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3
IRF7342QPbF
2.0
0.240
0.200
0.160
0.120
0.080
-3.4 A
=
I
D
1.5
1.0
0.5
0.0
VGS = -4.5V
VGS = -10V
V
=-10V
GS
0
2
4
6
8
10
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-I , Drain Current (A)
T , Junction Temperature ( C)
J
D
Fig 6. Typical On-Resistance Vs. Drain
Fig 5. Normalized On-Resistance
Current
Vs. Temperature
0.45
300
I
D
TOP
-1.5A
-2.7A
250
200
150
100
50
BOTTOM -3.4A
0.35
0.25
0.15
0.05
I
= -3.4 A
D
0
A
25
50
75
100
125
150
2
5
8
11
14
°
Starting T , Junction Temperature ( C)
J
-VGS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Fig 8. Maximum Avalanche Energy
Voltage
Vs. Drain Current
4
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IRF7342QPbF
1200
960
720
480
240
0
20
16
12
8
V
= 0V,
f = 1MHz
gd , ds
I
D
=
-3.1A
GS
V
V
V
=-48V
=-30V
=-12V
C
= C + C
C
SHORTED
DS
DS
DS
iss
gs
C
= C
gd
rss
C
= C + C
ds
oss
gd
C
iss
C
C
oss
4
rss
0
1
10
100
0
10
20
30
40
-V , Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7342QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
6
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IRF7342QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2007
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7
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