IRF7342 [INFINEON]
Power MOSFET; 功率MOSFET
| 型号： | IRF7342 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET |
| 文件： | 总7页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -91859
IRF7342
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
1
2
3
4
8
S1
G 1
D 1
VDSS = -55V
7
D 1
6
S2
D2
5
D 2
G 2
RDS(on) = 0.105Ω
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain- Source Voltage
-55
V
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
-3.4
-2.7
A
-27
PD @TC = 25°C
PD @TC = 70°C
2.0
W
Power Dissipation
1.3
Linear Derating Factor
0.016
± 20
30
W/°C
VGS
Gate-to-Source Voltage
V
V
VGSM
EAS
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy
114
dv/dt
TJ, TSTG
Peak Diode Recovery dv/dt
5.0
V/ns
°C
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Maximum Junction-to-Ambientꢀ
Typ.
–––
Max.
62.5
Units
°C/W
RθJA
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1
2/24/99
IRF7342
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-55 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.054 ––– V/°C Reference to 25°C, ID = -1mA
––– 0.095 0.105
––– 0.150 0.170
-1.0 ––– –––
3.3 ––– –––
––– ––– -2.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -10V, ID = -3.4A
VGS = -4.5V, ID = -2.7A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -3.1A
VDS = -55V, VGS = 0V
VDS = -55V, VGS = 0V, TJ = 55°C
VGS = -20V
RDS(on)
StaticDrain-to-SourceOn-Resistance
Ω
VGS(th)
gfs
GateThresholdVoltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-SourceLeakageCurrent
µA
nA
Gate-to-SourceForwardLeakage
Gate-to-SourceReverseLeakage
Total Gate Charge
VGS = 20V
Qg
––– 26
38
ID = -3.1A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 3.0 4.5
nC VDS = -44V
VGS = -10V, See Fig. 10
––– 8.4
––– 14
––– 10
––– 43
––– 22
13
22
15
64
32
VDD = -28V
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 16Ω,
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 690 –––
––– 210 –––
––– 86 –––
Output Capacitance
pF
VDS = -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
ContinuousSourceCurrent
(BodyDiode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– ––– -2.0
A
G
ISM
Pulsed Source Current
(Body Diode)
integralreverse
–––
––– ––– -1.2
––– 54 80
––– 85 130
-27
–––
p-njunctiondiode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
V
TJ = 25°C, IS = -2.0A, VGS = 0V
ns
TJ = 25°C, IF = -2.0A
Qrr
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Starting TJ = 25°C, L = 20mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -3.4A. (See Figure 8)
ꢀ When mounted on 1 inch square copper board, t<10 sec
2
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IRF7342
100
10
1
100
10
1
VGS
-15V
-12V
-10V
-8.0V
-45V
-4.0V
-3.5V
VGS
-15V
-12V
-10V
-8.0V
-4.5V
-4.0V
-3.5V
TOP
TOP
BOTTOM -3.0V
BOTTOM -3.0V
-3.0V
-3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
°
T = 150 C
J
°
0.1
0.1
0.1
0.1
1
10
100
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
100
°
T = 25 C
J
°
T = 150 C
J
°
T = 150 C
J
10
°
T = 25 C
J
1
V
= -25V
DS
V
= 0 V
GS
1.2
20µs PULSE WIDTH
0.1
0.2
1
0.4
0.6
0.8
1.0
1.4
3
4
5
6 7
-V ,Source-to-Drain Voltage (V)
SD
-V , Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
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3
IRF7342
2.0
0.240
0.200
0.160
0.120
0.080
-3.4 A
=
I
D
1.5
1.0
0.5
0.0
VGS = -4.5V
VGS = -10V
V
= -10V
GS
0
2
4
6
8
10
12
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-I , Drain Current (A)
T , Junction Temperature ( C)
J
D
Fig 6. Typical On-Resistance Vs. Drain
Fig 5. Normalized On-Resistance
Current
Vs. Temperature
0.45
300
I
D
TOP
-1.5A
-2.7A
BOTTOM -3.4A
250
200
150
100
50
0.35
0.25
0.15
0.05
I
= -3.4 A
D
0
A
25
50
75
100
125
150
2
5
8
11
14
°
Starting T , Junction Temperature ( C)
J
-V G S , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Fig 8. Maximum Avalanche Energy
Voltage
Vs. Drain Current
4
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IRF7342
1200
960
720
480
240
0
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= -3.1A
GS
V
V
V
=-48V
=-30V
=-12V
C
= C + C
DS
DS
DS
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
gd
oss
ds
C
iss
C
C
oss
4
rss
0
1
10
100
0
10
20
30
40
-V , Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 10. Typical Gate Charge Vs.
Fig 9. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7342
SO-8 Package Details
INCH ES
M ILLIM ET ERS
D IM
D
M IN
M AX
.0688
.0098
.018
M IN
1.35
0.10
0.36
0.19
4.80
3.81
M AX
1.75
0.25
0.46
0.25
4.98
3.99
5
- B -
A
.0532
.0040
.014
A1
B
θ
8
1
7
2
6
3
5
4
5
H
E
C
D
E
.0075
.189
.0098
.196
0.25 (.010)
M
A M
- A -
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K x 45°
θ
6X
e1
e1
H
K
0.635 BASIC
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C -
0.10 (.004)
6
C
8X
L
8X
L
A1
B
8X
θ
0.25 (.010)
M
C A S B S
RECOM MENDED FOOTPRINT
NOTES:
0.72 (.028 )
8X
1. DIM ENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIM ENSION : INCH.
3. DIM ENSIONS ARE SHOW N IN MILLIMETERS (INCHES).
4. OUTLINE CONFORM S TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 )
1.78 (.070)
8X
5
DIMENSION DOES NOT INCLUDE M OLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
1.27 ( .050 )
3X
Part Marking
6
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IRF7342
Tape and Reel
T E R M IN A L N U M B E R
1
12.3 ( .48 4
11.7 ( .46 1
)
)
8.1 ( .31 8
7.9 ( .31 2
)
)
FE E D D IR E C TIO N
N O TE S :
1 . C O N TR O L L IN G D IM E N S IO N : M IL L IM E TE R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ).
3 . O U TL IN E C O N FO R M S T O E IA -4 8 1 & E IA -5 4 1.
33 0.00
(12.992)
M AX .
14.40 ( .5 66
12.40 ( .4 88
)
)
N O TE S
1. C O N T R O LLIN G D IM E N S IO N : M ILLIM E T ER .
2. O U TL IN E C O N FO R M S T O E IA -481 E IA -541.
:
&
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http://www.irf.com/
Data and specifications subject to change without notice.
2/99
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7
相关型号：
IRF7342TR
Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
INFINEON
IRF7342TRPBF-1
Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
INFINEON
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