IRF7353D2UPBF [INFINEON]
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN;
| 型号： | IRF7353D2UPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96073A
IRF7353D2UPbF
FETKYäMOSFET / Schottky Diode
l Co-Pack HEXFET® Power MOSFET
and Schottky Diode
l Ideal For Buck Regulator Applications
l N-ChannelHEXFETpowerMOSFET
l Low VF Schottky Rectifier
l Generation5Technology
l SO-8Footprint
1
2
3
4
8
K
K
A
VDSS = 30V
7
A
6
5
S
D
D
RDS(on) = 0.029Ω
Schottky VF = 0.52V
G
l Lead-Free
Top View
Description
The FETKY™ family of Co-Pack HEXFET® Power MOSFETs and Schottky
diodes offers the designer an innovative, board space saving solution for
switchingregulatorandpowermanagementapplications.Generation5HEXFET
power MOSFETs utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremelyefficientdevicesuitableforuseinawidevarietyofportableelectronics
applications.
SO-8
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current
6.5
A
5.2
Pulsed Drain Current
Power Dissipation
52
PD @TA = 25°C
PD @TA = 70°C
2.0
W
1.3
Linear Derating Factor
16
mW/°C
V
VGS
Gate-to-Source Voltage
± 20
-5.0
dv/dt
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
V/ns
°C
TJ, TSTG
-55 to +150
Thermal Resistance Ratings
Parameter
Maximum
Units
RθJA
Junction-to-Ambient ꢀ
62.5
°C/W
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
Starting TJ = 25°C, L = 10mH, RG = 25Ω, IAS = 4.0A
ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
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1
09/18/06
IRF7353D2UPbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
RDS(on)
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.7A
VDS = VGS, ID = 250µA
VDS = 24V, ID = 5.8A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55°C
VGS = 20V
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
0.023 0.029
0.032 0.046
Ω
VGS(th)
gfs
Gate Threshold Voltage
—
14
—
—
—
—
22
—
—
V
S
Forward Transconductance
Drain-to-Source Leakage Current
IDSS
1.0
25
µA
nA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
100
-100
33
VGS = -20V
Qg
ID = 5.8A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
2.6 3.9
6.4 9.6
nC VDS = 24V
VGS = 10V (see figure 8)
8.1
8.9
26
12
13
39
26
—
—
—
VDD = -5V
ID = 1.0A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 15Ω
VGS = 0V
18
Ciss
Coss
Crss
Input Capacitance
650
320
130
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz (see figure 7)
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
—
—
—
—
—
—
—
2.5
30
A
ISM
VSD
trr
0.78 1.0
V
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IF = 1.7A
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
45
58
68
87
ns
nC
Qrr
di/dt = 100A/µs
Schottky Diode Maximum Ratings
Parameter
Max. Units
Conditions
IF (av)
Max. Average Forward Current
3.2
A
50% Duty Cycle. Rectangular Wave, Tc = 25°C
50% Duty Cycle. Rectangular Wave, Tc = 70°C
2.0
ISM
Max. peak one cycle Non-repetitive
Surge current
200
5µs sine or 3µs Rect. pulse
Following any rated
20
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
A
Schottky Diode Electrical Specifications
Parameter
Max. Units
Conditions
VFM
Max. Forward voltage drop
0.57
I = 3.0, T = 25°C
f j
0.77
V
I = 6.0, T = 25°C
f j
I = 3.0, T = 125°C
f j
0.52
0.79
I = 6.0, T = 125°C
f
j
Irm
Max. Reverse Leakage current
0.30
Vr= 30V
T = 25°C
j
T = 125°C
j
mA
37
Ct
Max. Junction Capacitance
Max. Voltage Rate of Charge
310 pF
4900 V/µs
Vr = 5Vdc (100kHz to 1 MHz) 25°C
Rated Vr
dv/dt
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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IRF7353D2UPbF
Power MOSFET Characteristics
100
10
1
100
VGS
15V
VGS
TOP
TOP
15V
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
10
3.0V
3.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
A
1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.0
5.8A
=
I
D
1.5
1.0
0.5
0.0
TJ = 25°C
TJ = 150°C
10
VDS = 10V
20µs PULSE WIDTH
5.0A
V
= 10V
GS
1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
3.0
3.5
4.0
4.5
T , Junction Temperature ( C)
J
VGS , Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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IRF7353D2UPbF
Power MOSFET Characteristics
0.040
0.12
V
= 4.5V
GS
0.10
0.08
0.06
0.04
0.036
0.032
0.028
0.024
0.020
I
= 5.8A
D
V
= 10V
GS
0.02
0.00
A
A
0
10
20
30
40
0
3
6
9
12
15
I
, Drain Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 5. Typical On-Resistance Vs. Drain
Fig 6. Typical On-Resistance Vs. Gate
Current
Voltage
1200
20
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
I = 5.8A
D
= C + C
,
C
SHORTED
gs
gd
gd
ds
V
= 15V
DS
= C
= C + C
ds
gd
16
12
8
900
600
300
0
C
iss
C
oss
C
rss
4
A
0
1
10
100
0
10
20
30
40
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 7. Typical Capacitance Vs.
Fig 8. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
4
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IRF7353D2UPbF
Power MOSFET Characteristics
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
T = 150°C
J
10
T = 25°C
J
V
GS
= 0V
A
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
, Source-to-Drain Voltage (V)
SD
Fig 10. Typical Source-Drain Diode
Forward Voltage
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IRF7353D2UPbF
Schottky Diode Characteristics
100
10
100
TJ= 150°C
125°C
100°C
1
75°C
50°C
0.1
0.01
10
25°C
TJ = 150°C
A
0.001
TJ = 125°C
TJ = 25°C
0
5
10
15
20
25
30
Reverse Voltage - VR (V)
Fig. 12 - Typical Values of
Reverse Current Vs. Reverse
1
Voltage
160
140
120
100
80
Vr = 80% Rated
R thJA = 62.5°C/W
Square wave
DC
0.1
60
0.0
0.2
0.4
0.6
0.8
1.0
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
40
Forward Voltage Drop - VF (V)
20
A
0
Fig. 11 - Typical Forward Voltage Drop
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Characteristics
Average Forward Current - I F(AV) (A)
Fig.13 - Maximum Allowable Ambient
Temp. Vs. ForwardCurrent
6
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IRF7353D2UPbF
SO-8 (Fetky) Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking Information
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IRF7353D2UPbF
SO-8 (Fetky) Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2006
8
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