IRF7380PBF_08 [INFINEON]
High frequency DC-DC converters Lead-Free; 高频DC- DC转换器无铅
| 型号： | IRF7380PBF_08 |
| 厂家： | 
Infineon |
| 描述： | High frequency DC-DC converters Lead-Free |
| 文件： | 总8页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95723A
IRF7380PbF
HEXFET® Power MOSFET
VDSS
80V
RDS(on) max
ID
Applications
l High frequency DC-DC converters
l Lead-Free
73m @VGS = 10V
3.6A
Benefits
1
2
3
4
8
S1
G1
D1
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
7
D1
6
S2
D2
5
G2
D2
SO-8
l Fully Characterized Avalanche Voltage
and Current
Top View
Absolute Maximum Ratings
Parameter
Max.
80
Units
V
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
± 20
3.6
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ T = 25°C
A
D
D
@ T = 100°C
A
2.9
29
A
DM
P
@T = 25°C
A
Maximum Power Dissipation
Linear Derating Factor
2.0
W
D
0.02
2.3
-55 to + 150
W/°C
dv/dt
Peak Diode Recovery dv/dt
Operating Junction and
V/ns
°C
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount) *
Typ.
–––
Max.
42
Units
°C/W
RθJL
RθJA
–––
50
Notes through are on page 8
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1
07/09/08
IRF7380PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
80
–––
0.09
61
–––
V
VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient –––
––– V/°C Reference to 25°C, ID = 1mA
Ω
m
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
73
4.0
V
GS = 10V, ID = 2.2A
VDS = VGS, ID = 250µA
DS = 80V, VGS = 0V
VDS = 64V, VGS = 0V, TJ = 125°C
GS = 20V
VGS = -20V
VGS(th)
–––
–––
–––
–––
–––
V
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
20
µA
V
250
200
-200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 25V, ID = 2.2A
gfs
4.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
Qg
15
23
ID = 2.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
2.9
4.5
9.0
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC VDS = 40V
VGS = 10V
VDD = 40V
ID = 2.2A
td(off)
tf
Turn-Off Delay Time
Fall Time
41
ns RG = 24Ω
VGS = 10V
17
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
660
110
15
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
V
DS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
710
72
140
V
GS = 0V, VDS = 0V to 64V
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
75
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
2.2
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
I
I
Continuous Source Current
–––
–––
3.6
A
A
V
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
showing the
integral reverse
G
–––
–––
29
SM
S
(Body Diode)
Diode Forward Voltage
p-n junction diode.
T = 25°C, I = 2.2A, V = 0V
J S GS
V
t
–––
–––
–––
–––
50
1.3
–––
–––
SD
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 2.2A, VDD = 40V
J F
rr
di/dt = 100A/µs
Q
t
110
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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IRF7380PbF
100
10
1
100
10
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
VGS
15V
10V
7.0V
5.0V
4.5V
4.3V
4.0V
3.7V
TOP
TOP
BOTTOM
BOTTOM
1
3.7V
0.1
3.7V
0.01
0.001
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
2.5
3.6A
=
I
D
2.0
1.5
1.0
0.5
0.0
T
= 150°C
J
T
= 25°C
V
J
1
0
= 15V
DS
20µs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20
40
60
80 100 120 140 160
3.0
4.0
5.0
6.0
7.0
TJ, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7380PbF
12
10
8
100000
V
C
= 0V,
f = 1 MHZ
GS
I = 2.1A
D
= C + C , C SHORTED
V
V
V
= 64V
= 40V
= 16V
iss
gs gd ds
DS
DS
DS
C
= C
gd
rss
10000
1000
100
10
C
= C + C
oss
ds gd
C
iss
6
C
oss
4
C
rss
2
1
0
1
10
100
0
2
4
6
8
10 12 14 16
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10
°
T = 25
C
J
100µsec
1msec
°
T = 150
C
J
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
100
V
= 0 V
GS
0.1
0.1
0.0
0.5
1.0
1.5
2.0
1
10
1000
VSD, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7380PbF
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
TA , Ambient Temperature (°C)
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
0.02
0.01
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
10
J
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7380PbF
95
90
85
800
700
600
500
400
300
200
100
0
80
V
GS
= 10V
75
70
65
60
55
50
I
= 3.6A
D
0
5
10
15
20
25
30
3.0
5.0
7.0
9.0
11.0
13.0
15.0
I
, Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
V
200
DS
D.U.T.
-
V
I
G
D
V
GS
TOP
1.0A
1.8A
2.2A
3mA
Charge
160
120
80
40
0
BOTTOM
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
25
50
75
100
125
150
20V
Ω
0.01
t
p
Starting TJ, Junction Temperature (°C)
I
AS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7380PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRF7380PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 31mH
RG = 25Ω, IAS = 2.2A.
When mounted on 1 inch square copper board.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time as
Coss while VDS is rising from 0 to 80% VDSS.
ISD ≤ 2.2A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS,TJ ≤ 150°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2008
8
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相关型号：
IRF7389PBF-1
Power Field-Effect Transistor, 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
INFINEON
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