概述
数据手册
替代型号IRF7404 概述
HEXFET Power MOSFET HEXFET功率MOSFET MOS管
IRF7404 数据手册
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IRF7404
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel Mosfet
A
1
2
3
4
8
S
S
D
VDSS = -20V
7
D
l Surface Mount
6
S
G
D
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
5
D
RDS(on) = 0.040Ω
Top View
Description
FifthGenerationHEXFETsfromInternationalRectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devicescanbeusedinanapplicationwithdramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
S O -8
Absolute Maximum Ratings
Parameter
10 Sec. Pulsed Drain Current, VGS @ -4.5V
Max.
-7.7
Units
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-6.7
A
-5.4
-27
PD @TA = 25°C
Power Dissipation
2.5
W
W/°C
V
Linear Derating Factor
0.02
VGS
Gate-to-Source Voltage
± 12
dv/dt
TJ,TSTG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
-5.0
V/ns
°C
-55 to + 150
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
–––
50
°C/W
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1
3/10/99
IRF7404
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-20 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.012 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.040
––– ––– 0.060
-0.70 ––– –––
6.8 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
––– ––– 50
––– ––– 5.5
––– ––– 21
––– 14 –––
––– 32 –––
––– 100 –––
––– 65 –––
VGS = -4.5V, ID = -3.2A
VGS = -2.7V, ID = -2.7A
VDS = VGS, ID = -250µA
VDS = -15V, ID = -3.2A
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = -12V
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 12V
Qg
ID = -3.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -16V
VGS = -4.5V, See Fig. 6 and 12
VDD = -10V
ID = -3.2A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 3.1Ω, See Fig. 10
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 2.5 –––
––– 4.0 –––
Between lead tip
nH
pF
G
and center of die contact
S
Ciss
Coss
Crss
Input Capacitance
––– 1500 –––
––– 730 –––
––– 340 –––
VGS = 0V
Output Capacitance
VDS = -15V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
––– ––– -3.1
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– ––– -27
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– -1.0
––– 69 100
––– 71 110
V
TJ = 25°C, IS = -2.0A, VGS = 0V
ns
TJ = 25°C, IF = -3.2A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ISD ≤ -3.2A, di/dt ≤ -65A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Surface mounted on FR-4 board, t ≤ 10sec.
2
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IRF7404
1000
100
10
1000
100
10
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
TOP
TOP
BOTTOM - 1.5V
BOTTOM - 1.5V
-1.5V
1
1
-1.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
TJ = 25°C
T
= 150°C
J
A
0.1
0.1
A
0.01
0.1
1
10
100
0.01
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
D S
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
10
1
I
= -5.3A
D
TJ = 25°C
1.5
1.0
0.5
0.0
TJ = 15 0°C
VD S = -15 V
20 µs P UL SE W IDTH
V
= -4.5V
G S
A
5.0A
-60 -40
-20
J
0
20
40
60
80
100 120 140 160
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T
, Junction Tem perature (°C)
-V
, Ga te-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7404
10
8
3000
I
V
= -3.2A
= -16V
V
= 0V ,
f = 1M Hz
G S
iss
D
DS
C
C
C
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
= C
= C
rss
oss
gd
ds
gd
C
iss
2000
1000
0
6
C
oss
4
C
rss
2
FOR TEST CIRCUIT
SEE FIGURE 12
0
A
A
0
10
20
30
40
50
60
1
10
100
Q
, Total Gate Charge (nC)
-V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
= 150°C
J
T
= 25°C
J
1ms
10ms
°
T = 25 C
A
J
°
T = 150 C
Single Pulse
V
= 0V
G S
1.4
0.1
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.6
-V , Drain-to-Source Voltage (V)
DS
-V
, Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7404
8.0
6.0
4.0
2.0
0.0
RD
V D S
D.U .T.
V G S
R G
A
-
+ VD D
-4.5V
P ulse W idth
≤
1µ s
≤
D uty F actor 0 .1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7404
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
.3µF
12V
Q
G
-
-4.5 V
V
+
DS
D.U.T.
Q
Q
GD
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
Fig 12a. Basic Gate Charge Waveform
6
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IRF7404
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
VDD
VGS
*
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
GS
[
] ***
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
[
[
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
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7
IRF7404
Package Outline
SO-8 Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
D
MIN
MAX
MIN
1.35
0.10
MAX
1.75
0.25
5
-
7
2
B -
A
.0532
.0040
.014
.0688
.0098
A1
B
8
1
6
3
5
4
5
.018
.0098
.196
.157
0.36
0.19
4.80
3.81
0.46
0.25
4.98
3.99
H
E
A
-
-
0.25 (.010)
M
A M
C
D
E
.0075
.189
.150
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 45°
6X
e1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
-
C -
0.10 (.004)
6
C
8X
L
8X
A1
L
B
8X
θ
0.25 (.010)
M
C A S B S
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION INCH.
0.72 (.028
8X
)
:
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46
( .255 )
1.78 (.070)
8X
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO
A
SUBSTRATE..
6
1.27
(
.050
)
3X
Part Marking Information
SO-8
E XAM PLE : TH IS IS AN IR F 7101
D ATE C O DE (YW W )
LA ST D IGIT O F TH E YEAR
W E EK
Y
=
W W
=
312
XXXX
IN TER N ATIO N AL
R EC TIF IER
LOG O
F7101
W AFER
LO T C O D E
PAR T N UM BER
TOP
(LAST
4 D IG ITS)
BO TTO M
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice. 3/99
8
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IRF7404 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| IRF7404PBF | INFINEON | HEXFET Power MOSFET | 类似代替 |
|
| IRF7404TRPBF | INFINEON | generation v technology | 类似代替 |
|
| BSO203SPHXUMA1 | INFINEON | Power Field-Effect Transistor, 5.7A I(D), 20V, 0.021ohm, 1-Element, P-Channel, Silicon, Me | 功能相似 |
|
IRF7404 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| IRF7404PBF | INFINEON | HEXFET Power MOSFET | 获取价格 |
|
| IRF7404PBF-1 | INFINEON | Industry-standard pinout SO-8 Package | 获取价格 |
|
| IRF7404PBF-1_15 | INFINEON | Industry-standard pinout SO-8 Package | 获取价格 |
|
| IRF7404QPBF | INFINEON | HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040ヘ ) | 获取价格 |
|
| IRF7404QTRPBF | INFINEON | Transistor | 获取价格 |
|
| IRF7404TR | UMW | 种类:P-Channel;漏源电压（Vdss）:-55V;持续漏极电流（Id）（在25°C时）:-7.7A;Vgs(th)(V):±12;漏源导通电阻:40mΩ@-4.5V | 获取价格 |
|
| IRF7404TRPBF | INFINEON | generation v technology | 获取价格 |
|
| IRF7404TRPBF-1 | INFINEON | Power Field-Effect Transistor, P-Channel, Metal-Oxide Semiconductor FET, | 获取价格 |
|
| IRF7406 | INFINEON | HEXFET POWER MOSFET | 获取价格 |
|
| IRF7406GPBF | INFINEON | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 | 获取价格 |
|
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