IRF7404QPBF [INFINEON]
HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040ヘ ); HEXFET功率MOSFET ( VDSS = -20V , RDS ( ON) = 0.040ヘ)型号: | IRF7404QPBF |
厂家: | Infineon |
描述: | HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040ヘ ) |
文件: | 总9页 (文件大小:261K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 96127
IRF7404QPbF
HEXFET® Power MOSFET
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Advanced Process Technology
UltraLowOn-Resistance
P Channel MOSFET
A
1
2
3
4
8
S
S
D
VDSS = -20V
7
D
SurfaceMount
6
S
G
D
Available in Tape & Reel
150°COperatingTemperature
Automotive [Q101] Qualified
Lead-Free
5
D
RDS(on) = 0.040Ω
Top View
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in package utilize the lastest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient
and reliable device for use in Automotive applications and
a wide variety of other applications.
SO-8
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power
applications. This surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
10 Sec. Pulsed Drain Current, VGS @ -4.5V
-7.7
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-6.7
A
-5.4
-27
PD @TA = 25°C
Power Dissipation
2.5
W
W/°C
V
Linear Derating Factor
0.02
VGS
Gate-to-Source Voltage
± 12
dv/dt
TJ,TSTG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
-5.0
V/ns
°C
-55 to + 150
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
RθJA
Maximum Junction-to-Ambient
50
°C/W
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1
08/29/07
IRF7404QPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-20
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
-0.012 V/°C Reference to 25°C, ID = -1mA
0.040
0.060
-0.70
6.8
-1.0
-25
-100
100
50
5.5
21
14
32
100
65
VGS = -4.5V, ID = -3.2A
RDS(ON)
Static Drain-to-Source On-Resistance
Ω
VGS = -2.7V, ID = -2.7A
VDS = VGS, ID = -250µA
VDS = -15V, ID = -3.2A
VDS = -16V, VGS = 0V
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
µA
nA
IDSS
IGSS
Drain-to-Source Leakage Current
V
DS = -16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -12V
VGS = 12V
ID = -3.2A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -16V
VGS = -4.5V, See Fig. 6 and 12
VDD = -10V
ID = -3.2A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 3.1Ω, See Fig. 10
D
S
LD
LS
Internal Drain Inductance
Internal Source Inductance
2.5
4.0
Between lead tip
nH
pF
G
and center of die contact
Ciss
Coss
Crss
Input Capacitance
1500
730
340
VGS = 0V
Output Capacitance
VDS = -15V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
-3.1
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
-27
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
-1.0
69 100
71 110
V
TJ = 25°C, IS = -2.0A, VGS = 0V
ns
TJ = 25°C, IF = -3.2A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Surface mounted on FR-4 board, t ≤ 10sec.
ISD ≤ -3.2A, di/dt ≤ -65A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
2
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IRF7404QPbF
1000
100
10
1000
100
10
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
TOP
TOP
BOTTOM - 1.5V
BOTTOM - 1.5V
-1.5V
1
1
-1.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 150°C
T
J
= 25°C
A
100
0.1
0.01
0.1
0.01
A
0.1
1
10
100
0.1
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
10
1
I
= -5.3A
D
T = 25°C
J
1.5
1.0
0.5
0.0
TJ = 150°C
VDS = -15V
20µs PULSE WIDTH
V
= -4.5V
GS
A
5.0A
-60 -40 -20
0
20 40 60 80 100 120 140 160
1.5
2.0
2.5
3.0
3.5
4.0
4.5
T
, Junction Temperature (°C)
-VGS , Gate-to-Source Voltage (V)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7404QPbF
10
8
3000
I
V
= -3.2A
= -16V
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
D
DS
= C + C
,
C
SHORTED
gs
gd
gd
ds
= C
= C + C
ds
gd
C
iss
2000
1000
0
6
C
oss
4
C
rss
2
FOR TEST CIRCUIT
SEE FIGURE 12
0
A
A
0
10
20
30
40
50
60
1
10
100
Q
, Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 150°C
J
T = 25°C
J
1ms
10ms
°
T = 25 C
A
J
°
T = 150 C
Single Pulse
V
= 0V
GS
0.1
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-V , Drain-to-Source Voltage (V)
DS
-V , Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7404QPbF
8.0
6.0
4.0
2.0
0.0
RD
VDS
D.U.T.
VGS
RG
A
+- VDD
-4.5V
≤
Pulse Width 1µs
≤
Duty Factor 0.1%
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7404QPbF
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
.3µF
12V
Q
G
-
-4.5 V
V
+
DS
D.U.T.
Q
Q
GD
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
Fig 12a. Basic Gate Charge Waveform
6
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IRF7404QPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
VDD
VGS
*
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
GS
[
] ***
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
[
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
[
]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
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7
IRF7404QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRF7404QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2007
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9
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