IRF7413 [INFINEON]
Power MOSFET(Vdss=30V, Id=12A); 功率MOSFET （ VDSS = 30V ，ID = 12A）
| 型号： | IRF7413 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=30V, Id=12A) |
| 文件： | 总8页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 91330F
IRF7413
SMPS MOSFET
HEXFET® Power MOSFET
VDSS
RDS(on) max(mW)
ID
Applications
l High frequency DC-DC converters
30V
11@VGS = 10V
12A
Benefits
A
A
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
1
2
3
4
8
S
S
S
G
D
7
D
6
D
5
D
l Fully Characterized Avalanche Voltage
and Current
SO-8
Top View
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
12
9.6
A
96
PD @TA = 25°C
Power Dissipation
2.5
W
W/°C
V
Linear Derating Factor
0.02
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 20
Peak Diode Recovery dv/dt
Operating Junction and
1.0
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
50
°C/W
Notes through are on page 8
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1
3/19/02
IRF7413
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 11
––– ––– 18
VGS = 10V, ID = 7.2A
VGS = 4.5V, ID = 6.0A
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS(th)
IDSS
Gate Threshold Voltage
1.0
––– –––
V
––– ––– 1.0
––– ––– 25
––– ––– 100
––– ––– -100
VDS = 24V, VGS = 0V
Drain-to-Source Leakage Current
µA
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 20V
IGSS
nA
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
gfs
16
––– –––
44 66
S
VDS = 10V, ID = 7.2A
ID = 7.2A
Qg
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
7.9 –––
9.2 –––
8.8 –––
8.0 –––
35 –––
14 –––
nC VDS = 24V
VGS = 10V,
VDD = 100V
ID = 7.2A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1670 –––
––– 670 –––
––– 100 –––
––– 2290 –––
––– 680 –––
––– 1020 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 24V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 24V ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
120
Units
mJ
EAS
IAR
7.2
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
3.1
96
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.0
––– 50 75
––– 74 110
V
TJ = 25°C, IS = 7.2A, VGS = 0V
TJ = 25°C, IF = 7.2A
ns
Qrr
2
nC di/dt = 100A/µs
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IRF7413
100
10
1
100
10
VGS
VGS
10V
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
TOP
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM2.5V
BOTTOM2.5V
1
2.5V
0.1
0.01
2.5V
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
12A
=
I
D
T
= 150°C
J
1.5
1.0
0.5
0.0
10
1
T
= 25°C
J
V
= 15V
DS
20µs PULSE WIDTH
V
=10V
GS
0
2.0
3.0
4.0
5.0
6.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7413
12
10
8
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
+ C C
GS
I = 7.2A
D
V
= 24V
C
,
DS
iss
gs
gd
ds
SHORTED
VDS= 15V
VDS= 6.0V
C
= C
rss
gd
C
= C + C
oss
ds gd
Ciss
Coss
6
4
Crss
100
2
0
10
1
0
10
Q
20
30
40
50
10
100
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100.0
10.0
1.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100µsec
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
T
= 25°C
J
10msec
100
V
= 0V
GS
1
0.1
0
1
10
1000
0.4
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7413
12
10
8
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
V
DS
90%
0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
Notes:
SINGLE PULSE
1. Duty factor D =
2. Peak T = P
J
t / t
1
x Z
(THERMAL RESPONSE)
+ T
10
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7413
0.024
0.020
0.016
0.012
0.008
0.06
0.05
0.04
0.03
0.02
0.01
0.00
I
= 7.2A
V
= 4.5V
D
GS
V
= 10V
GS
0.004
0
3.2
3.3
3.4
3.5
3.6
3.7
20
I
40
60
80
V
Gate -to -Source Voltage (V)
, Drain Current (A)
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
300
V
DS
D.U.T.
-
I
D
V
G
TOP
3.2A
4.6A
BOTTOM 7.2A
V
GS
3mA
Charge
250
200
150
100
50
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
0
V
DD
-
25
50
75
100
125
150
I
A
20V
°
Starting T , Junction Temperature ( C)
Ω
0.01
t
p
J
I
AS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7413
SO-8 Package Details
INCHES
MIL L IME T E RS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040
b
c
.013
8
7
6
5
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
E
0.25 [.010]
A
.1497
1
2
3
4
.050 BASIC
1.27 BASIC
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PR INT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING &TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF ORMS T O JE DE C OUT L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF710
1 (MOSFET)
DATE CODE (YWW)
Y = LAST DIGIT OF
WW = WEEK
THE YEAR
YWW
XXXX
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
F7101
PART NUMBER
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7
IRF7413
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board
max. junction temperature.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 4.4mH
RG = 25Ω, IAS = 7.2A.
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 7.2A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.3/02
8
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相关型号：
IRF7413APBF
Power Field-Effect Transistor, 12A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
INFINEON
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