IRF7416TRPBF [INFINEON]
HEXFET® Power MOSFET; ???????? HEXFET®功率MOSFET
| 型号： | IRF7416TRPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET |
| 文件： | 总10页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95137A
IRF7416PbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l P-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
A
D
1
2
3
4
8
S
S
VDSS = -30V
7
D
6
5
S
G
D
D
RDS(on) = 0.02Ω
l Lead-Free
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infra red, or wave soldering techniques. Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
SO-8
Absolute Maximum Ratings
Parameter
Max.
-10
Units
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
I
I
I
@ TA = 25°C
D
D
A
-7.1
-45
@ TA = 70°C
DM
W
W/°C
V
Power Dissipation
2.5
P
@TA = 25°C
D
Linear Derating Factor
Gate-to-Source Voltage
0.02
± 20
V
GS
EAS
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
370
-5.0
mJ
dv/dt
V/ns
T
T
J
-55 to + 150
°C
Storage Temperature Range
STG
Thermal Resistance
Parameter
Max.
Units
RθJA
Junction-to-Ambient
50
°C/W
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1
06/29/11
IRF7416PbF
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
-30 ––– –––
Conditions
VGS = 0V, ID = -250μA
V(BR)DSS
V
V
/ T
(BR)DSS Δ
Δ
Breakdown Voltage Temp. Coefficient ––– -0.024 ––– V/°C Reference to 25°C, ID = -1mA
J
––– ––– 0.020
––– ––– 0.035
-1.0 ––– -2.04
V
V
GS = -10V, ID = -5.6A
GS = -4.5V, ID = -2.8A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
IDSS
Gate Threshold Voltage
V
S
VDS = VGS, ID = -250μA
Forward Transconductance
Drain-to-Source Leakage Current
5.6
––– ––– -1.0
––– ––– -25
––– –––
VDS = -10V, ID = -2.8A
V
V
V
DS = -24V, VGS = 0V
DS = -24V, VGS = 0V, TJ = 125°C
GS = -20V
μA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– -100
––– ––– 100
nA
VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Total Gate Charge
Conditions
Qg
–––
–––
–––
–––
–––
–––
–––
61
8.0
22
18
49
59
60
92
12
ID = -5.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
VDS = -24V
nC
32
VGS = -10V, See Fig. 6 & 9
VDD = -15V
–––
–––
–––
–––
ID = -5.6A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
RD = 2.7Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1700 –––
––– 890 –––
––– 410 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = -25V
ƒ = 1.0MHz, See Fig. 5
pF
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
––– ––– -3.1
A
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
G
ISM
––– –––
-45
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.0
V
TJ = 25°C, IS = -5.6A, VGS = 0V
TJ = 25°C,IF = -5.6A
di/dt = 100A/μs
–––
–––
56
99
85
ns
nC
Qrr
150
Notes:
Repetitive rating; pulse width limited by
ISD ≤ -5.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 25mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -5.6A. (See Figure 12)
ꢀ Surface mounted on FR-4 board, t ≤ 10sec.
2
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IRF7416PbF
100
10
1
100
10
1
VGS
- 15V
- 10V
VGS
- 15V
- 10V
TOP
TOP
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
BOTTOM - 3.0V
-3.0V
-3.0V
20μs PULSE WIDTH
20μs PULSE WIDTH
T
J
= 150°C
T
J
= 25°C
A
A
0.1
1
10
0.1
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
10
1
2.0
I
= -5.6A
D
T = 25°C
J
1.5
1.0
0.5
0.0
T = 150°C
J
VDS = -10V
20μs PULSE WIDTH
5.5A
V
= -10V
GS
A
3.0
3.5
4.0
4.5
5.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
-VGS , Gate-to-Source Voltage (V)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7416PbF
4000
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= -5.6A
GS
iss
rss
oss
D
= C + C
,
C
SHORTED
gs
gd
gd
ds
= C
V
= -24V
= -15V
DS
= C + C
ds
gd
V
DS
3000
2000
1000
0
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
A
1
10
100
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
1ms
T = 150°C
J
10
T = 25°C
J
10ms
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
GS
= 0V
1
0.1
A
1
10
100
0.4
0.6
0.8
1.0
1.2
-V , Drain-to-Source Voltage (V)
DS
-V , Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7416PbF
RD
VDS
Q
Q
G
VGS
D.U.T.
-10V
Q
RG
-
GS
GD
+
VDD
V
G
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
t
t
r
t
t
f
d(on)
d(off)
50KΩ
V
.2μF
12V
GS
.3μF
10%
-
V
+
DS
D.U.T.
V
GS
90%
-3mA
V
DS
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7416PbF
1000
800
600
400
200
0
I
L
D
V
DS
TOP
-2.5A
-4.5A
BOTTOM -5.6A
D.U.T
R
G
V
DD
A
I
AS
DRIVER
-20V
0.01
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
I
AS
25
50
75
100
125
150
o
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
6
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IRF7416PbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
VDD
VGS
*
* Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V ] ***
GS
[
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
]
[
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
SD
]
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
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7
IRF7416PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
0.635 BASIC
e1 .025 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONF ORMS T O JE DEC OU T LINE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A= ASSEMBLY SITE CODE
LOT CODE
PART NUMBER
8
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IRF7416PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/2011
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Authorized Distributor
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