IRF7477 [INFINEON]
SMPS MOSFET; 开关电源MOSFET
| 型号： | IRF7477 |
| 厂家： | 
Infineon |
| 描述： | SMPS MOSFET |
| 文件： | 总8页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 94094A
IRF7477
SMPS MOSFET
HEXFET® Power MOSFET
Applications
VDSS
30V
RDS(on) max (mΩ)
8.5@VGS = 10V
ID
14A
l High Frequency Synchronous Buck
Converters for Computers and
Communications
10@VGS = 4.5V
11A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
l Low Charge Ratio to Eliminate False Turn
On in High Frequency Circuits
A
A
D
1
2
3
4
8
S
S
7
D
6
S
D
5
G
D
SO-8
Top View
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-to-Source Voltage
± 20
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
14
11
A
110
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.5
W
W
1.6
0.02
mW/°C
°C
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
50
°C/W
Notes through are on page 8
www.irf.com
1
6/26/01
IRF7477
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 ––– –––
––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
–––
1.0
6.5
7.7
8.5
10
VGS = 10V, ID = 14A
VGS = 4.5V, ID = 11A
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 16V
mΩ
V
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– 2.5
––– ––– 20
––– ––– 100
––– ––– 200
––– ––– -200
µA
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 15V, ID = 11A
ID = 11A
35
––– –––
25 38
S
Qg
–––
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
Qoss
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
6.5 –––
8.2 –––
30 –––
12 –––
9.8 –––
19 –––
5.9 –––
nC
VDS = 15V
VGS = 4.5V
VGS = 0V, VDS = 15V
VDD = 15V
ID = 11A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 1.8Ω
VGS = 4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 2710 –––
––– 1120 –––
––– 100 –––
Output Capacitance
Reverse Transfer Capacitance
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
500
Units
mJ
A
IAR
8.2
Diode Characteristics
Symbol
IS
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
2.3
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– 110
S
––– 0.80 1.3
––– 0.65 –––
––– 91 140
––– 130 200
––– 90 140
––– 140 210
V
TJ = 25°C, IS = 11A, VGS = 0V
TJ = 125°C, IS = 11A, VGS = 0V
TJ = 25°C, IF = 11A, VR=15V
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
ns
Qrr
trr
nC di/dt = 100A/µs
ns TJ = 125°C, IF = 11A, VR=15V
nC di/dt = 100A/µs
Qrr
2
www.irf.com
IRF7477
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
7.0V
4.5V
3.7V
3.5V
3.3V
3.0V
7.0V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
BOTTOM 2.7V
2.7V
2.7V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
14A
=
I
D
1.5
1.0
0.5
0.0
°
T = 25 C
J
100
°
T = 150 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
10
2.5
3.0
3.5
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF7477
12
10
8
100000
10000
1000
I
D
= 11A
V
= 0V,
f = 1 MHZ
GS
V
V
= 24V
= 15V
DS
DS
C
= C + C
,
C
ds
SHORTED
iss
gs
gd
C
= C
rss
gd
C
= C + C
oss
ds
gd
Ciss
Coss
6
4
Crss
100
2
10
1
0
0
10
20
30
40
50
60
10
, Drain-to-Source Voltage (V)
100
Q
, Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
°
T = 150 C
J
100µsec
1msec
°
T = 25 C
J
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
100
V
= 0 V
GS
1.0
1
0.1
0.2
0.4
0.6
0.8
1.2
0.1
1
10
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
www.irf.com
Fig 6. On-Resistance Vs. Drain Current
IRF7477
15
12
9
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
V
DS
90%
0
25
50
T
75
100
125
°
150
, Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
P
DM
t
1
0.1
0.01
SINGLE PULSE
t
2
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
10
DM
thJA
A
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7477
0.009
0.008
0.007
0.006
0.005
0.012
0.010
0.008
0.006
V
= 4.5V
= 10V
GS
I
= 14A
D
V
GS
3.0
3.4
3.8
4.2
4.6
0
20
40
60
80
100
120
V
Gate -to -Source Voltage (V)
I
, Drain Current (A)
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
1200
V
DS
D.U.T.
I
-
D
V
G
TOP
3.7A
6.6A
BOTTOM 8.2A
V
GS
3mA
Charge
1000
800
600
400
200
0
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15 V
V
(B R )D S S
DRIVER
L
t
p
V
DS
D.U.T
AS
R
G
+
V
DD
-
25
50
75
100
125
150
I
A
20V
°
Starting T , Junction Temperature ( C)
0.01
Ω
t
p
J
I
A S
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
www.irf.com
IRF7477
SO-8 Package Details
INC HES
M ILLIM ETER S
DIM
D
M IN
M AX
.0688
.0098
.018
M IN
1.35
0.10
0.36
0.19
4.80
3.81
M AX
1.75
0.25
0.46
0.25
4.98
3.99
5
-
7
2
B -
A
.0532
.0040
.014
A1
B
8
1
6
3
5
4
5
H
E
A
C
D
E
.0075
.189
.0098
.196
0 .25 (.01 0)
M
A M
-
-
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 4 5°
6X
e1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C
-
0.1 0 (.0 04 )
6
C
8 X
L
8X
L
A 1
B
8 X
θ
0.2 5 (.010 )
M
C A S B S
R E C O M M E N D E D F O O T P R IN T
N O T E S :
0.7 2 (.028
8X
)
1. D IM E N S IO N IN G A N D T O LE R A N C IN G P E R A N S I Y 14 .5M -19 82 .
2. C O N T R O LL IN G D IM E N S IO N : IN C H .
3. D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S (IN C H E S ).
4. O U TL IN E C O N F O R M S TO JE D E C O U TL IN E M S -01 2A A .
6.46 ( .2 55
)
1.78 (.0 70 )
8X
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O TR U S IO N S
M O LD P R O T R U S IO N S N O T TO E XC E E D 0.25 (.0 06 ).
D IM E N S IO N S IS TH E LE N G T H O F LE A D F O R S O LD E R IN G T O
A
S U B S TR A TE ..
6
1 .27
(
.05 0
)
3 X
SO-8 Part Marking
www.irf.com
7
IRF7477
SO-8 Tape and Reel
TERM INAL NUM BER
1
12.3
11.7
(
(
.484
.461
)
)
8.1 ( .318
7.9 ( .312
)
)
FEED DIRECTION
N OTES :
1. CO NTRO LLING DIM E NSIO N : M ILLIM ETER .
2. ALL DIM ENS ION S ARE SHO W N IN M ILL IM E TER S(INC HES).
3. OU TL IN E CO N FO RM S TO EIA-481
& EIA-541.
330.00
(12.992)
M AX.
14.40 ( .566
12.40 ( .488
)
)
NOTES
:
1. CO NTROLLING DIM ENSION : M ILLIMETER.
2. OUTLINE CONFORM S TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
When mounted on 1 inch square copper board
Starting TJ = 25°C, L = 15mH
RG = 25Ω, IAS = 8.2A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 6/01
8
www.irf.com
相关型号：
IRF7478TR
Power Field-Effect Transistor, 7A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
INFINEON
IRF7478TRPBF
Power Field-Effect Transistor, 7A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
INFINEON
IRF7480MTRPBF
Power Field-Effect Transistor, 217A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON
©2020 ICPDF网 联系我们和版权申明