IRF7492 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET型号: | IRF7492 |
厂家: | Infineon |
描述: | HEXFET Power MOSFET |
文件: | 总8页 (文件大小:106K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 94498
IRF7492
HEXFET® Power MOSFET
VDSS
200V
RDS(on) max
ID
Applications
l High frequency DC-DC converters
79mΩ@VGS = 10V 3.7A
Benefits
A
A
l Low Gate to Drain Charge to Reduce
Switching Losses
1
2
8
S
S
D
7
D
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
3
4
6
S
D
5
G
D
l Fully Characterized Avalanche Voltage
and Current
SO-8
Top View
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Max.
200
Units
V
V
VDS
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
3.7
3.0
A
30
PD @TA = 25°C
Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/°C
V/ns
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
9.5
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
50
Units
°C/W
–––
Notes through are on page 8
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1
06/27/02
IRF7492
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200 ––– –––
––– 0.20 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
BV(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.5
64
79
mΩ VGS = 10V, ID = 2.2A
––– –––
V
VDS = VGS, ID = 250µA
DS = 160V, VGS = 0V
––– ––– 1.0
––– ––– 250
––– ––– 100
––– ––– -100
V
IDSS
Drain-to-Source Leakage Current
µA
VDS = 160V, VGS = 0V, TJ = 125°C
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
gfs
7.9
–––
–––
–––
–––
–––
–––
–––
––– –––
39 59
S
VDS = 50V, ID = 3.7A
ID = 2.2A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
9.2 –––
15 –––
15 –––
13 –––
27 –––
14 –––
nC VDS = 100V
VGS = 10V
VDD = 100V
ID = 2.2A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.5Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1820 –––
––– 190 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
––– 780 –––
––– 89 –––
––– 150 –––
94 –––
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
130
Units
mJ
EAS
IAR
4.4
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
2.3
30
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 69 100
––– 200 310
V
TJ = 25°C, IS = 2.2A, VGS = 0V
ns
TJ = 25°C, IF = 2.2A
Qrr
nC di/dt = 100A/µs
2
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IRF7492
100
10
1
100
10
VGS
15V
12V
VGS
TOP
TOP
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
BOTTOM
BOTTOM
1
5.5V
0.1
5.5V
0.01
0.001
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
10.00
1.00
3.0
3.7A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
T
= 150°C
J
T
= 25°C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
0.10
GS
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
V
, Gate-to-Source Voltage (V)
Tj, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7492
12
10
8
100000
V
= 0V,
f = 1 MHZ
I = 2.2A
D
GS
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
C
= C + C , C SHORTED
iss
gs gd ds
C
= C
rss
gd
C
= C + C
ds gd
oss
10000
1000
100
C
iss
6
4
C
oss
C
rss
2
10
0
1
10
100
1000
0
10
Q
20
30
40
50
V
, Drain-to-Source Voltage (V)
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
10
1
100µsec
1msec
°
T = 150
J
C
°
C
T = 25
J
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
V
= 0 V
GS
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7492
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
TA , Ambient Temperature (°C)
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJA
A
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7492
100
90
80
70
60
50
40
500
400
300
200
100
0
V
= 10V
GS
I
= 3.7A
D
9
5
6
7
8
10 11 12 13 14 15
0
5
10
15
20
25
30
V
Gate -to -Source Voltage (V)
I
, Drain Current (A)
GS,
D
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
300
V
DS
D.U.T.
-
I
V
D
G
TOP
2.0A
3.5A
4.4A
V
GS
3mA
Charge
250
200
150
100
50
BOTTOM
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15 V
V
(B R )D S S
DRIVER
L
t
p
V
DS
D.U.T
AS
R
G
+
-
0
V
DD
I
25
50
75
100
125
150
A
20V
°
( C)
0.01
Ω
t
Starting Tj, Junction Temperature
p
I
A S
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7492
SO-8 Package Details
INC HES
MILLIMETER S
DIM
D
MIN
M AX
.0688
.0098
.018
MIN
1.35
0.10
0.36
0.19
4.80
3.81
MAX
1.75
0.25
0.46
0.25
4.98
3.99
5
-
7
2
B -
A
.0532
.0040
.014
A1
B
8
1
6
3
5
4
5
H
E
A
C
D
E
.0075
.189
.0098
.196
0 .25 (.01 0)
M
A M
-
-
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K
x 4 5°
6X
e1
e1
H
K
0.635 BASIC
θ
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C
-
0.1 0 (.0 04 )
6
C
8 X
L
8X
L
A 1
B
8 X
θ
0.2 5 (.010 )
M
C A S B S
R E C O M M E N D E D F O O T P R IN T
N O T E S :
0.7 2 (.028
8X
)
1. D IM E N S IO N IN G A N D T O LE R A N C IN G P E R A N S I Y 14 .5M -19 82 .
2. C O N T R O LL IN G D IM E N S IO N : IN C H .
3. D IM E N S IO N S A R E S H O W N IN M IL LIM E T E R S (IN C H E S ).
4. O U TL IN E C O N F O R M S TO JE D E C O U TL IN E M S -01 2A A .
6.46 ( .2 55
)
1.78 (.0 70 )
8X
5
D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O TR U S IO N S
M O LD P R O T R U S IO N S N O T TO E XC E E D 0.25 (.0 06 ).
D IM E N S IO N S IS TH E LE N G T H O F LE A D F O R S O LD E R IN G T O
A
S U B S TR A TE ..
6
1 .27
(
.05 0
)
3 X
SO-8 Part Marking
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7
IRF7492
SO-8 Tape and Reel
TERMINAL NUMBER
1
12.3
11.7
(
(
.484
.461
)
)
8.1 ( .318
7.9 ( .312
)
)
FEED DIRECTION
N OTES :
1. CO NTRO LLING DIME NSIO N : MILLIMETER .
2. ALL DIMENS ION S ARE SHO W N IN MILL IME TER S(INC HES).
3. OU TL IN E CO N FO RM S TO EIA-481
& EIA-541.
330.00
(12.992)
M AX.
14.40 ( .566
12.40 ( .488
)
)
NOTES
:
1. CO NTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORM S TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by When mounted on 1 inch square copper board.
max. junction temperature.
ꢀCoss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25°C, L = 14mH
RG = 25Ω, IAS = 4.4A.
.
ISD ≤ 2.2A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C.
,
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/02
8
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