IRF7488PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7488PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95283
IRF7488PbF
HEXFET® Power MOSFET
Applications
VDSS
80V
RDS(on) max
29mW@VGS=10V
Qg
38nC
l High frequency DC-DC converters
l Lead-Free
A
A
D
Benefits
1
2
3
4
8
7
S
S
S
G
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
D
6
5
D
D
SO-8
Top View
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
VDS
Drain-Source Voltage
80
V
VGS
Gate-to-Source Voltage
± 20
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
6.3
5.0
A
50
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.5
1.6
W
20
mW/°C
°C
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
50
Units
–––
°C/W
Notes through are on page 9
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1
09/21/04
IRF7488PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
80 ––– –––
––– 0.089 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
24
29
mΩ VGS = 10V, ID = 3.8A
––– 4.0
V
VDS = VGS, ID = 250µA
VDS = 80V, VGS = 0V
VDS = 64V, VGS = 0V, TJ = 125°C
VGS = 20V
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
IDSS
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
IGSS
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 15V, ID = 3.8A
ID = 3.8A
gfs
9.3
–––
–––
–––
–––
–––
–––
–––
––– –––
S
Qg
38
9.1
12
57
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 40V
VGS = 10V,
13 –––
12 –––
44 –––
16 –––
VDD = 40V
ID = 3.8A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 9.1Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 1680 –––
––– 270 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
32 –––
pF
ƒ = 1.0MHz
––– 1760 –––
––– 170 –––
––– 340 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 64V ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
96
Units
mJ
EAS
IAR
Avalanche Current
–––
3.8
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
2.3
50
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 65 98
––– 190 290
V
TJ = 25°C, IS = 3.8A, VGS = 0V
ns
TJ = 25°C, IF = 3.8A
Qrr
nC di/dt = 100A/µs
2
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IRF7488PbF
100
10
1
100
10
VGS
VGS
TOP
15V
12V
10V
6.0V
5.5V
5.0V
4.5V
TOP
15V
12V
10V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
BOTTOM 4.0V
1
4.0V
0.1
4.0V
0.01
0.001
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
100.00
10.00
1.00
I
= 6.3A
D
V
= 10V
T
= 150°C
GS
J
2.0
1.5
1.0
0.5
T
= 25°C
J
0.10
V
= 25V
DS
20µs PULSE WIDTH
0.01
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
4.0
5.0
6.0 7.0
, Junction Temperature (°C)
V
GS
, Gate-to-Source Voltage (V)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7488PbF
20
16
12
8
100000
V
= 0V,
f = 1 MHZ
GS
I = 3.8A
D
C
= C + C
,
C
SHORTED
iss
gs
gd
ds
V
= 64V
DS
C
= C
rss
gd
VDS= 40V
VDS= 16V
C
= C + C
10000
1000
100
oss
ds
gd
Ciss
Coss
Crss
4
0
10
0
10
Q
20
30
40
50
60
1
10
100
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100.0
10.0
1.0
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
J
100µsec
1msec
1
T
= 25°C
J
Tc = 25°C
10msec
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
1
10
100
1000
0.4
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7488PbF
7
6
5
4
3
2
1
0
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
T
75
100
125
150
, Case Temperature (°C)
C
10%
Fig 9. Maximum Drain Current Vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
SINGLE PULSE
0.1
( THERMAL RESPONSE )
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7488PbF
0.036
0.034
0.032
0.030
0.028
0.05
0.04
0.03
0.02
V
10V
GS=
0.026
0.024
0.022
I
= 3.8A
12.0
D
0
20
40
60
80
4.0
8.0
16.0
I
, Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
V
240
DS
D.U.T.
-
V
G
I
D
V
GS
1.7A
3.0A
3.8A
TOP
3mA
Charge
200
160
120
80
I
I
D
G
BOTTOM
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
40
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
0
D.U.T
AS
R
G
V
25
50
75
100
125
150
DD
-
I
A
20V
Starting T , Junction Temperature (°C)
Ω
0.01
t
p
J
I
AS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7488PbF
Driver Gate Drive
P.W.
P.W.
D =
Period
D.U.T
Period
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
-
+
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 17. Gate Charge Waveform
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7
IRF7488PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMET ER S
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
0.25 [.010]
A
.1497
4
.050 BASIC
1.27 BASIC
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JE DE C OU T L INE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Y= LAST DIGIT OF THE YEAR
XXXX
F7101
WW = WEEK
INTERNATIONAL
RECTIFIER
LOGO
A = ASSEMBLYSITE CODE
LOT CODE
PART NUMBER
8
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IRF7488PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board
max. junction temperature.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 13mH
RG = 25Ω, IAS = 3.8A.
as Coss while VDS is rising from 0 to 80% VDSS
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
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9
相关型号：
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Power Field-Effect Transistor, 5.4A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
INFINEON
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