IRF7491 [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7491 |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：510K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94537
IRF7491
HEXFET® Power MOSFET
Applications
ꢀ High frequency DC-DC converters
VDSS
RDS(on) max
ID
Ω
16m @VGS = 10V
80V
9.7A
Benefits
A
A
ꢀ Low Gate to Drain Charge to Reduce
Switching Losses
ꢀ Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
1
2
3
4
8
S
S
D
7
D
6
S
D
5
G
D
ꢀ Fully Characterized Avalanche Voltage
and Current
SO-8
Top View
Absolute Maximum Ratings
Parameter
Max.
80
Units
V
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
20
ꢂ
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
9.7
I
I
I
@ T = 25°C
A
D
D
@ T = 100°C
A
6.1
A
ꢁ
Pulsed Drain Current
77
DM
P
@T = 25°C
A
Maximum Power Dissipation
Linear Derating Factor
2.5
W
D
0.02
4.4
-55 to + 150
W/°C
ꢃ
dv/dt
T
J
Peak Diode Recovery dv/dt
Operating Junction and
V/ns
°C
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount) *
Typ.
–––
Max.
20
Units
°C/W
RθJL
RθJA
–––
50
Notes ꢁ through ꢂare on page 8
www.irf.com
1
08/30/02
IRF7491
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
Drain-to-Source Breakdown Voltage
80
–––
0.08
14
–––
V
VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient –––
––– V/°C Reference to 25°C, ID = 1mA
ꢅ
GS = 10V, ID = 5.8A
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
3.5
16
5.5
V
V
V
mΩ
V
VGS(th)
–––
–––
–––
–––
–––
DS = VGS, ID = 250µA
DS = 64V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
1.0
µA
250
100
-100
VDS = 64V, VGS = 0V, TJ = 125°C
GS = 20V
VGS = -20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 25V, ID = 5.8A
gfs
9.6
–––
–––
–––
–––
–––
–––
–––
–––
51
18
18
22
19
32
10
–––
S
Qg
76
ID = 5.8A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
nC VDS = 40V
ꢅ
ꢅ
VGS = 10V
DD = 40V
V
ID = 5.8A
ns RG = 6.2Ω
VGS = 10V
td(off)
tf
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 2940 –––
V
GS = 0V
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
290
160
980
210
310
–––
–––
–––
–––
–––
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 64V, ƒ = 1.0MHz
ꢃ
VGS = 0V, VDS = 0V to 64V
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
130
5.8
Units
mJ
ꢄꢂ
Single Pulse Avalanche Energy
EAS
IAR
ꢁ
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
I
I
Continuous Source Current
–––
–––
9.7
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
–––
–––
77
SM
S
ꢁꢂ
(Body Diode)
p-n junction diode.
V
t
ꢅ
T = 25°C, I = 5.8A, V = 0V
J S GS
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
47
1.3
–––
–––
V
SD
ns T = 25°C, I = 5.8A, VDD = 25V
rr
J
F
ꢅ
di/dt = 100A/µs
Q
t
110
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
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IRF7491
100
10
100
10
1
VGS
15V
12V
VGS
TOP
TOP
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
10V
8.0V
7.5V
7.0V
6.5V
6.0V
BOTTOM
BOTTOM
1
6.0V
6.0V
0.1
0.01
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.00
10.00
1.00
2.5
9.7A
=
I
D
T
= 150°C
J
2.0
1.5
1.0
0.5
0.0
T
= 25°C
J
V
= 25V
DS
20µs PULSE WIDTH
V
=10V
GS
0.10
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5.0
6.0
7.0
8.0
9.0
10.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7491
100000
12.0
10.0
8.0
V
C
= 0V,
f = 1 MHZ
GS
I
= 5.8A
D
= C + C , C SHORTED
iss
gs
= C
gd
ds
C
V
V
V
= 64V
= 40V
= 16V
rss
gd
DS
DS
DS
C
= C + C
oss
ds gd
10000
1000
100
C
C
iss
6.0
oss
C
rss
4.0
2.0
10
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
10
Q
20
30
40
50
60
V
Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100.00
10.00
1.00
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100µsec
T
= 25°C
J
1msec
1
T
= 25°C
A
Tj = 150°C
Single Pulse
10msec
100
V
= 0V
GS
0.10
0.1
0.0
0.2
V
0.4
0.6
0.8
1.0
0
1
10
1000
, Source-toDrain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7491
12
9
RD
VDS
VGS
10V
D.U.T.
RG
+VDD
-
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
3
V
DS
90%
0
25
50
75
100
125
150
TA , Ambient Temperature (°C)
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
P
2
DM
t
1
SINGLE PULSE
0.1
0.01
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
2. Peak T = P
J
t / t
1
x Z
+ T
10
DM
thJA
A
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF7491
20
19
18
17
16
15
14
13
12
11
10
45
40
35
30
25
20
15
10
5
V
= 10V
GS
I
= 9.7A
D
0
0
10 20 30 40 50
, Drain Current (A)
60 70 80
6
7
8
9
10 11 12 13 14 15 16
I
V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3µF
VGS
.2µF
12V
Q
Q
GD
GS
+
300
V
DS
D.U.T.
I
-
D
V
G
TOP
2.6A
4.7A
BOTTOM 5.8A
V
GS
3mA
Charge
240
180
120
60
I
I
D
G
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
0
V
DD
-
25
50
75
100
125
150
I
A
20V
°
Starting T , Junction Temperature ( C)
Ω
0.01
t
p
J
I
AS
Fig 15c. Maximum Avalanche Energy
Fig 15a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7491
SO-8 Package Details
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A1 .0040
b
c
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
E
0.25 [.010]
A
.1497
4
.050 BASIC
1.27 BASIC
0.635 BASIC
e 1 .025 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
FOOTPRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN I
RF7101 (MOSFET)
DATE CODE (YWW)
Y= LAST DIGIT
WW = WEEK
OF THE YEAR
YWW
XXXX
F7101
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
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7
IRF7491
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
ꢅWhen mounted on 1 inch square copper board.
ꢆCoss eff. is a fixed capacitance that gives the same charging time
ꢁRepetitive rating; pulse width limited by
max. junction temperature.
ꢄStarting TJ = 25°C, L = 7.4mH
RG = 25Ω, IAS = 5.8A.
ꢃPulse width ≤ 400µs; duty cycle ≤ 2%.
as Coss while VDS is rising from 0 to 80% VDSS
ꢂISD ≤ 5.8A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C.
.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/02
8
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