首页 |元器件品牌

IRF7494PBF [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET
IRF7494PBF
型号： IRF7494PBF
厂家： Infineon    Infineon
描述：

HEXFET Power MOSFET
HEXFET功率MOSFET
文件： 总8页 (文件大小：534K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
PD - 95349B  
IRF7494PbF  
HEXFET® Power MOSFET  
VDSS  
150V  
RDS(on) max  
44m @VGS = 10V  
ID  
5.2A  
Applications  
l High frequency DC-DC converters  
l Lead-Free  
Benefits  
A
A
l Low Gate to Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
1
2
3
4
8
S
S
D
7
D
6
S
D
5
G
D
l Fully Characterized Avalanche Voltage  
and Current  
SO-8  
Top View  
Absolute Maximum Ratings  
Parameter  
Max.  
150  
20  
Units  
V
VDS  
VGS  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
I
I
I
@ T = 25°C  
5.2  
3.7  
42  
A
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
D
A
@ T = 100°C  
A
D
DM  
P
@T = 25°C  
A
3.0  
W
Maximum Power Dissipation  
D
Linear Derating Factor  
0.02  
3.0  
-55 to + 150  
W/°C  
dv/dt  
Peak Diode Recovery dv/dt  
Operating Junction and  
V/ns  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient (PCB Mount)  
Typ.  
–––  
Max.  
20  
Units  
°C/W  
RθJL  
RθJA  
–––  
50  
Notes  through † are on page 8  
www.irf.com  
1
03/27/08  
IRF7494PbF  
Static @ TJ = 25°C (unless otherwise specified)  
Parameter  
Drain-to-Source Breakdown Voltage  
Min. Typ. Max. Units  
150 ––– –––  
0.15 ––– V/°C Reference to 25°C, ID = 1mA  
Conditions  
VGS = 0V, ID = 250µA  
V(BR)DSS  
V
∆
∆
V(BR)DSS/ TJ  
Breakdown Voltage Temp. Coefficient –––  
RDS(on)  
VGS(th)  
IDSS  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
–––  
2.5  
35  
44  
4.0  
10  
V
GS = 10V, ID = 3.1A  
VDS = VGS, ID = 250µA  
DS = 120V, VGS = 0V  
VDS = 120V, VGS = 0V, TJ = 125°C  
mΩ  
V
–––  
–––  
–––  
–––  
Drain-to-Source Leakage Current  
–––  
–––  
–––  
–––  
µA  
V
250  
100  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
nA VGS = 20V  
VGS = -20V  
––– -100  
Dynamic @ TJ = 25°C (unless otherwise specified)  
Parameter  
Forward Transconductance  
Total Gate Charge  
Min. Typ. Max. Units  
Conditions  
VDS = 50V, ID = 5.2A  
ID = 3.1A  
VDS = 75V  
gfs  
Qg  
12  
–––  
36  
7.5  
13  
15  
13  
36  
14  
–––  
S
–––  
–––  
–––  
–––  
–––  
–––  
–––  
54  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
–––  
–––  
–––  
–––  
–––  
–––  
nC  
VGS = 10V  
VDD = 75V  
ID = 3.1A  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
ns RG = 6.5Ω  
VGS = 10V  
Ciss  
Coss  
Crss  
Coss  
Coss  
Coss eff.  
Input Capacitance  
––– 1750 –––  
VGS = 0V  
Output Capacitance  
Reverse Transfer Capacitance  
Output Capacitance  
Output Capacitance  
Effective Output Capacitance  
–––  
–––  
–––  
–––  
–––  
220  
100  
870  
120  
170  
–––  
–––  
–––  
–––  
–––  
VDS = 25V  
pF ƒ = 1.0MHz  
V
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz  
GS = 0V, VDS = 120V, ƒ = 1.0MHz  
V
VGS = 0V, VDS = 0V to 120V  
Avalanche Characteristics  
Parameter  
Typ.  
–––  
–––  
Max.  
370  
3.1  
Units  
mJ  
A
Single Pulse Avalanche Energy  
EAS  
IAR  
Avalanche Current  
Diode Characteristics  
Parameter  
Min. Typ. Max. Units  
Conditions  
D
S
I
I
Continuous Source Current  
–––  
–––  
2.7  
MOSFET symbol  
S
(Body Diode)  
Pulsed Source Current  
A
showing the  
integral reverse  
G
–––  
–––  
42  
SM  
(Body Diode)  
p-n junction diode.  
V
t
Diode Forward Voltage  
–––  
–––  
–––  
–––  
55  
1.3  
–––  
–––  
V
T = 25°C, I = 3.1A, V = 0V  
SD  
J S GS  
Reverse Recovery Time  
Reverse Recovery Charge  
Forward Turn-On Time  
ns T = 25°C, I = 3.1A, VDD = 25V  
J F  
rr  
di/dt = 100A/µs  
Q
t
140  
nC  
rr  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
on  
2
www.irf.com  
IRF7494PbF  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
vs. Temperature  
www.irf.com  
3
IRF7494PbF  
Fig 6. Typical Gate Charge vs.  
Fig 5. Typical Capacitance vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
Fig 7. Typical Source-Drain Diode  
Fig 8. Maximum Safe Operating Area  
Forward Voltage  
4
www.irf.com  
IRF7494PbF  
RD  
VDS  
VGS  
10V  
D.U.T.  
RG  
+VDD  
-
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
V
DS  
90%  
10%  
V
GS  
Fig 9. Maximum Drain Current vs.  
t
t
r
t
t
f
d(on)  
d(off)  
Ambient Temperature  
Fig 10b. Switching Time Waveforms  
100  
D = 0.50  
0.20  
0.10  
10  
1
0.05  
0.02  
0.01  
Notes:  
SINGLE PULSE  
( THERMAL RESPONSE )  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthja + T  
A
0.1  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t
, Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
www.irf.com  
5
IRF7494PbF  
Fig 12. On-Resistance vs. Drain Current  
Fig 13. On-Resistance vs. Gate Voltage  
Q
G
VGS  
L
VCC  
Q
Q
GD  
GS  
DUT  
0
1K  
V
G
Charge  
Fig 14a&b. Basic Gate Charge Test Circuit  
and Waveform  
15V  
V
(BR)DSS  
DRIVER  
+
L
t
p
V
DS  
D.U.T  
AS  
R
G
V
DD  
-
I
A
20V  
Ω
0.01  
t
p
I
AS  
Fig 15c. Maximum Avalanche Energy  
Fig 15a&b. Unclamped Inductive Test circuit  
vs. Drain Current  
and Waveforms  
6
www.irf.com  
IRF7494PbF  
SO-8 Package Outline  
Dimensions are shown in millimeters (inches)  
SO-8 Part Marking  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
www.irf.com  
7
IRF7494PbF  
SO-8 Tape and Reel  
Dimensions are shown in millimeters (inches)  
TERMINAL NUMBER 1  
12.3 ( .484 )  
11.7 ( .461 )  
8.1 ( .318 )  
7.9 ( .312 )  
FEED DIRECTION  
NOTES:  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).  
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
330.00  
(12.992)  
MAX.  
14.40 ( .566 )  
12.40 ( .488 )  
NOTES :  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
Notes:  
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.  
ꢀ Coss eff. is a fixed capacitance that gives the same charging time  
as Coss while VDS is rising from 0 to 80% VDSS  
† ISD ≤ 3.1A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.  
 Repetitive rating; pulse width limited by  
max. junction temperature.  
‚ Starting TJ = 25°C, L = 77mH,  
RG = 25Ω, IAS = 3.1A.  
ƒ When mounted on 1 inch square copper  
board, t ≤ 10 sec.  
.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Consumer market.  
Qualifications Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.03/08  
8
www.irf.com  

相关型号：

IRF7494TRPBF

 HEXFETPower MOSFET
INFINEON

IRF7495

 HEXFET Power MOSFET
INFINEON

IRF7495PBF

 HEXFET㈢Power MOSFET
INFINEON

IRF7495TR

 Power Field-Effect Transistor, 7.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
INFINEON

IRF7495TRPBF

 Low Gate to Drain Charge to Reduce Switching Losses
INFINEON

IRF7501

 Power MOSFET(Vdss=20V, Rds(on)=0.135ohm)
INFINEON

IRF7501PBF

 Generation V Technology Ulrtra Low On-Resistance
INFINEON

IRF7501TRPBF

 Generation V Technology
INFINEON

IRF7503

 Power MOSFET(Vdss=30V, Rds(on)=0.135ohm)
INFINEON

IRF7503PBF

 HEXFET㈢ Power MOSFET
INFINEON

IRF7503TR

 Generation V Technology
INFINEON

IRF7503TRPBF

 Power Field-Effect Transistor, 2.4A I(D), 30V, 0.135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
INFINEON
©2020 ICPDF网 联系我们和版权申明