IRF7524D1GTRPBF [INFINEON]
Transistor;PD - 93894A
IRF7700
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel
VDSS
-20V
RDS(on) max
0.015@VGS = -4.5V
0.024@VGS = -2.5V
ID
-8.6A
-7.3A
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for use in battery and load management.
1
2
3
4
8
7
6
5
D
S
G
1 =
D
S
S
8 =
7 =
6 =
5 =
D
S
S
2 =
3 =
4 =
G
D
TSSOP-8
The TSSOP-8 package, has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-20
Units
V
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
±8.6
±6.8
±68
1.5
A
PD @TC = 25°C
PD @TC = 70°C
Power Dissipation
W
Power Dissipation
0.96
0.01
± 12
Linear Derating Factor
W/°C
V
VGS
Gate-to-Source Voltage
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
83
Units
°C/W
RθJA
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6/19/00
IRF7700
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.011 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.015
––– ––– 0.024
-0.45 ––– -1.2
-20 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -4.5V, ID = -8.6A
VGS = -2.5V, ID = -7.3A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -8.6A
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 70°C
VGS = -12V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 12V
Qg
––– 59
––– 10
––– 19
89
15
29
ID = -8.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -16V
VGS = -5.0V
VDD = -10V
––– 19 –––
––– 40 –––
––– 120 –––
––– 130 –––
––– 4300 –––
––– 880 –––
––– 580 –––
ID = -1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
VGS = -4.5V
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
pF
VDS = -15V
ƒ = TBDkHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
––– ––– -1.5
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– -68
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– -1.2
––– 130 200
––– 180 270
V
TJ = 25°C, IS = -1.5A, VGS = 0V
ns
TJ = 25°C, IF = -1.5A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7700
100
10
1
100
10
1
VGS
VGS
TOP
-15V
TOP
-15V
-10V
-10V
-4.5V
-3.0V
-2.7V
-2.5V
-2.25V
-4.5V
-3.0V
-2.7V
-2.5V
-2.25V
BOTTOM -2.0V
BOTTOM -2.0V
-2.0V
-2.0V
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
J
°
°
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
100
4.1A
=
I
D
1.5
1.0
0.5
0.0
T
= 25°C
J
T
= 150°C
J
V
= -15V
DS
20µs PULSE WIDTH
V
= 4.5V
10
GS
2.0
2.4
2.8 3.2
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7700
2000
10
8
V
GS
= 0V,
f = 1MHz
C
I
D
= -4.1A
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
C
= C
gd
V
=-16V
rss
DS
C
= C + C
1600
1200
800
400
0
oss ds
C
iss
6
4
2
C
C
oss
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
4
8
12
16
20
24
1
10
100
Q
, Total Gate Charge (nC)
-V , Drain-to-Source Voltage (V)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
10us
100us
1ms
°
T = 150 C
J
10ms
°
T = 25 C
J
°
= 25 C
°
= 150 C
Single Pulse
T
C
T
J
V
= 0 V
GS
0.1
0.1
0.1
0.0
1
10
100
0.5
1.0
1.5
2.0
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7700
5.0
4.0
3.0
2.0
1.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
DM
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7700
0.06
0.04
0.02
0.00
0.026
0.022
0.018
0.014
V
= -2.5V
GS
I
= -8.6A
D
V
= -4.5V
GS
0.010
2.0
4.0
6.0
8.0
10.0
0
20
40
60
80
-V
Gate -to -Source Voltage (V)
-I , Drain Current (A)
GS,
D
Fig 12. Typical On-Resistance Vs. Drain
Fig 11. Typical On-Resistance Vs. Gate
Current
Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRF7700
0.90
0.80
0.70
0.60
0.50
0.40
0.30
60
50
40
30
20
10
0
I
= -250µA
D
-50
0
50
, Temperature (°C)
100
150
0.01
0.10
1.00
10.00
100.00
T
Time (sec)
J
Fig 15. Typical Power Vs. Time
Fig 14. Threshold Voltage Vs. Temperature
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IRF7700
TSSOP-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7702
DAT E CODE (YW)
LOT CODE (XX)
TABLE 1
XXYW
7702
PART NUMBER
WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.)
WORK
YEAR
Y
WEEK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
DATE CODE EXAMPLES:
9503 = 5C
9532 = EF
24
25
26
X
Y
Z
TABLE 2
WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
WORK
YEAR
Y
WE EK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
K
50
51
52
X
Y
Z
TSSOP-8 Tape and Reel
8LTSSOP (MO-153AA)
Ø 13"
16 mm
16mm
FEED DIRECTION
NOT E S:
1. TAPE & REEL OUTLINE CONFORMS TO EIA-481 & EIA-541.
8 mm
8
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IRF7700
TSSOP-8 Package Outline
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
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相关型号:
IRF7530TR
Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8
INFINEON
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