IRF7526D1TR [INFINEON]
Co-packaged HEXFETÃ Power MOSFET and Schottky Diode; 共同封装HEXFETÃ ？功率MOSFET和肖特基二极管
| 型号： | IRF7526D1TR |
| 厂家： | 
Infineon |
| 描述： | Co-packaged HEXFETÃ Power MOSFET and Schottky Diode |
| 文件： | 总8页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-91649C
IRF7526D1
TM
FETKY MOSFET & Schottky Diode
l Co-packaged HEXFET Power
MOSFET and Schottky Diode
l P-Channel HEXFET
1
8
K
K
A
VDSS = -30V
RDS(on) = 0.20Ω
Schottky Vf = 0.39V
2
7
A
3
4
6
5
l Low VF Schottky Rectifier
l Generation 5 Technology
S
D
D
G
TM
l Micro8 Footprint
Top View
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
ThenewMicro8TM package, withhalfthefootprintareaofthestandardSO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Micro8TM
Absolute Maximum Ratings
Parameter
Maximum
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
-2.0
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current ➀
-1.6
-16
A
PD @TA = 25°C
PD @TA = 70°C
1.25
W
Power Dissipation
0.8
Linear Derating Factor
10
mW/°C
V
VGS
Gate-to-Source Voltage
± 20
dv/dt
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
-5.0
V/ns
°C
TJ, TSTG
-55 to +150
Thermal Resistance Ratings
Parameter
Maximum
Units
RθJA
Junction-to-Ambient ➃
100
°C/W
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
ISD ≤ -1.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
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1
5/7/99
IRF7526D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = -250µA
VGS = -10V, ID = -1.2A
VGS = -4.5V, ID = -0.60A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -0.60A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = -20V
V(BR)DSS
RDS(on)
Drain-to-Source Breakdown Voltage
-30 ––– –––
––– 0.17 0.20
––– 0.30 0.40
-1.0 ––– –––
0.94 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
V
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 20V
Qg
––– 7.5
11
ID = -1.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 1.3 1.9
––– 2.5 3.7
––– 9.7 –––
––– 12 –––
––– 19 –––
––– 9.3 –––
––– 180 –––
––– 87 –––
––– 42 –––
nC VDS = -24V
VGS = -10V, See Fig. 6
VDD = -15V
ID = -1.2A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
RD = 12Ω,
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current(Body Diode) ––– ––– -1.25
A
ISM
VSD
trr
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
––– ––– -9.6
––– ––– -1.2
V
TJ = 25°C, IS = -1.2A, VGS = 0V
TJ = 25°C, IF = -1.2A
Reverse Recovery Time (Body Diode) ––– 30
45
55
ns
Qrr
Reverse Recovery Charge
––– 37
nC di/dt = 100A/µs
Schottky Diode Maximum Ratings
Parameter
Max. Units
Conditions
IF(av)
Max. Average Forward Current
1.9
50% Duty Cycle. Rectangular Wave, TA = 25°C
A
See Fig. 14
1.3
TA = 70°C
ISM
Max. peak one cycle Non-repetitive
Surge current
120
5µs sine or 3µs Rect. pulse
Following any rated
11
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
A
Schottky Diode Electrical Specifications
Parameter
Max. Units
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C.
VR = 30V TJ = 25°C
TJ = 125°C
VFM
Max. Forward voltage drop
0.50
0.62
V
0.39
0.57
IRM
Max. Reverse Leakage current
0.06
mA
16
Ct
Max. Junction Capacitance
Max. Voltage Rate of Charge
92
pF
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
dv/dt
3600 V/µs
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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IRF7526D1
Power Mosfet Characteristics
10
10
VGS
- 15V
- 10V
VGS
- 15V
- 10V
TOP
TOP
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
BOTTOM - 3.0V
1
1
-3.0V
-3.0V
20µs P ULSE W IDTH
20µs P ULSE W IDTH
T
= 25°C
T
= 150°C
J
J
A
A
0.1
0.1
0.1
1
10
0.1
1
10
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
10
I
= -1.2A
D
TJ = 2 5°C
TJ = 1 5 0 °C
1
V D S = -1 0 V
2 0 µs P UL S E W ID TH
V
= -10V
G S
0.1
A
7.0A
-60
-40
-20
J
0
20
40
60
80
100 120 140 160
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
T
, Junction Tem perature (°C)
-V
, G ate-to -Sou rce Voltage (V)
G S
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
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3
IRF7526D1
Power Mosfet Characteristics
20
400
I
= -1.2A
V
= 0V,
f = 1M Hz
D
G S
iss
C
C
C
= C
= C
= C
+ C
+ C
,
C
SHORTE D
gs
gd
ds
gd
ds
rss
oss
V
V
= -24V
= -15V
DS
DS
16
12
8
gd
300
200
100
0
C
C
iss
oss
C
rss
4
0
A
A
0
2
4
6
8
10
12
1
10
100
Q
, Total Gate Charge (nC)
-V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
10
100
10
1
OPE RATION IN THIS AREA LIM ITE D
BY R DS(on)
T
= 150°C
J
100µs
1m s
1
T
= 25°C
J
10m s
T
T
= 25°C
= 150°C
A
J
S ingle Pulse
V
= 0V
G S
A
0.1
0.1
A
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7526D1
Power Mosfet Characteristics
1000
100
10
D = 0.50
0.20
0.10
0.05
P
DM
0.02
0.01
t
1
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
10
DM
thJC
C
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.60
0.50
1.5
1.0
0.5
0.0
0.40
VGS = -4.5V
I
= -2.0A
0.30
0.20
0.10
VGS = -10V
3
A
A
3
6
9
12
15
0
1
2
4
-V
, G ate-to-Source Voltage (V)
-I , Drain Current (A)
D
GS
Fig 10. Typical On-Resistance Vs. Drain
Fig 11. Typical On-Resistance Vs. Gate
Current
Voltage
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IRF7526D1
Schottky Diode Characteristics
10
100
T
J
= 150°C
10
1
125°C
100°C
75°C
0.1
50°C
25°C
0.01
0.001
0.0001
A
0
5
10
15
20
25
30
R everse Voltage - V (V)
R
1
T
T
T
= 150°C
= 125°C
J
J
J
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
=
25°C
160
V r = 80% Rated
= 1 00°C /W
R
thJA
Sq uare wave
140
120
100
80
D
D
D
D
D
= 3/4
= 1/2
=1/3
= 1/4
= 1/5
60
40
DC
0.1
20
0.0
0.2
0.4
0.6
0.8
1.0
A
0
Forward Voltage Drop - VF (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Average Forw ard Current - I F(AV) (A)
Fig. 12 -Typical Forward Voltage Drop
Characteristics
Fig.14 - Maximum Allowable Ambient
Temp. Vs. ForwardCurrent
6
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IRF7526D1
Micro8TM Package Details
LEAD ASSIGNM ENTS
INCHES
M ILLIMETERS
DIM
D
M IN
M AX
.044
.008
.014
.007
.120
MIN
0.91
0.10
0.25
0.13
2.95
M AX
3
- B
-
6
3
D
D
7
D
6
D
5
D1 D1 D2 D2
A
.036
.004
.010
.005
.116
1.11
0.20
0.36
0.18
3.05
A1
B
8
1
7
6
5
4
8
1
8
1
7
5
4
3
C
D
e
SINGLE
DUAL
H
E
A
0.25 (.010)
M
A
M
-
-
2
3
2
3
4
.0256 BASIC
.0128 BASIC
0.65 BASIC
0.33 BASIC
2
e1
E
S
S
S
G
S1 G 1 S2 G 2
.116
.188
.016
0°
.120
.198
.026
6°
2.95
4.78
0.41
0°
3.05
H
L
5.03
0.66
6°
e
θ
6X
e
1
1
RECOM M ENDED FOOTPRINT
θ
1.04
A
0.38
8X
(
.041 )
8X
( .015
)
- C
B
-
0.10 (.004)
A
C
L
8X
0.08 (.003)
8X
8X
M
C
A
S
B
S
3.20
( .126
4.24
.167 )
( .208
5.28
(
)
)
NOTE S:
1
2
3
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M -1982.
CONTROLLING DIMENSION : INCH.
0.65
( .0256
6X
)
DIMENSIONS DO NOT INCLUDE M OLD FLASH.
Part Marking
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IRF7526D1
Micro8TM Tape & Reel
TERM IN AL N UM BER
1
12 .3 ( .484 )
11 .7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED D IREC TIO N
N O T ES:
1 . O U TL IN E C O N FO R M S T O E IA-4 81 & EIA-541.
2 . C O N TR O LL IN G D IM EN SIO N : M IL LIM ETE R.
330.00
(12.992)
M AX.
14 .40 ( .566 )
12 .40 ( .488 )
NO TES :
1. CO NTR O LLIN G DIM EN SIO N : M ILLIM ETER .
2. O U TLINE C O N FO R M S TO EIA-481 & EIA-541.
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Data and specifications subject to change without notice . 5/99
8
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