IRF7607TRHR [INFINEON]
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8, SOIC-8;
| 型号： | IRF7607TRHR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8, SOIC-8 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93845A
IRF7607
HEXFET® Power MOSFET
ꢀꢀꢀTrench Technology
A
A
1
2
8
ꢀꢀꢀUltra Low On-Resistance
ꢀꢀꢀN-Channel MOSFET
ꢀꢀꢀVery Small SOIC Package
ꢀꢀꢀLow Profile (<1.1mm)
ꢀꢀꢀAvailable in Tape & Reel
S
S
D
VDSS = 20V
7
D
3
4
6
S
D
5
G
D
RDS(on) = 0.030Ω
Top View
Description
New trench HEXFET power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
withanextremelyefficientandreliabledeviceforuseinawide
varietyofapplications.
The new Micro8 package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applicationswhereprintedcircuitboardspaceisatapremium.
Thelowprofile(<1.1mm)oftheMicro8willallowittofiteasily
intoextremelythinapplicationenvironmentssuchasportable
electronicsandPCMCIAcards.
Micro8
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain- Source Voltage
20
6.5
V
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
5.2
A
50
PD @TA = 25°C
PD @TA = 70°C
1.8
W
Power Dissipation
1.2
Linear Derating Factor
0.014
± 12
W/°C
V
VGS
Gate-to-Source Voltage
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
70
Units
°C/W
RθJA
www.irf.com
1
02/26/01
IRF7607
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20 ––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.016 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.030
––– ––– 0.045
0.60 ––– 1.2
13 ––– –––
––– ––– 1.0
––– ––– 25
––– ––– -100
––– ––– 100
VGS = 4.5V, ID = 6.5A
GS = 2.5V, ID = 5.2A
RDS(on)
Static Drain-to-Source On-Resistance
Ω
V
VGS(th)
gfs
Gate Threshold Voltage
V
S
VDS = VGS, ID = 250µA
VDS = 10V, ID = 6.5A
VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 70°C
VGS = -12V
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 12V
Qg
––– 15
22
ID = 6.5A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 2.2 3.3
––– 3.5 5.3
––– 8.5 –––
––– 11 –––
––– 36 –––
––– 16 –––
––– 1310 –––
––– 150 –––
––– 36 –––
nC VDS = 10V
VGS = 5.0V
VDD = 10V
ID = 1.0A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 10Ω
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
pF
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
–––
–––
1.8
50
–––
–––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.2
V
TJ = 25°C, IS = 1.7A, VGS = 0V
TJ = 25°C, IF = 1.7A
––– 19
––– 13
29
20
ns
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. (See fig. 11)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
www.irf.com
IRF7607
100
10
1
100
10
1
VGS
VGS
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
TOP
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
BOTTOM 1.50V
BOTTOM1.50V
1.50V
1.50V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25 C
J
°
T = 150 C
J
°
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
5.3A
=
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
V
= 15V
20µs PULSE WIDTH
DS
V
=4.5V
GS
1
1.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
2.0
2.5
3.0 3.5
°
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF7607
2000
10
8
6.5A
V
GS
= 0V,
f = 1MHz
C SHORTED
ds
I
D
=
C
= C + C
iss
gs
gd
gd ,
V
= 10V
DS
C
= C
rss
C
= C + C
1600
1200
800
400
0
oss
ds
gd
C
iss
6
4
2
C
C
oss
rss
0
0
4
8
12
16
20
24
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
1ms
°
T = 25 C
J
10ms
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1
0.1
0.1
0.4
1
10
100
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
DS
V
,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRF7607
0.20
0.10
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.00
Id = 250µA
-0.10
-0.20
-0.30
-0.40
-50
-25
0
25
50
75
100 125 150
25
50
T
75
100
125
°
150
, Case Temperature ( C)
T
, Temperature ( °C )
C
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Typical Vgs(th) Variance Vs.
Case Temperature
Juction Temperature
100
D = 0.50
0.20
0.10
0.05
10
P
DM
0.02
0.01
1
t
1
t
2
Notes:
SINGLE PULSE
(THERMAL RESPONSE)
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
10
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7607
0.040
0.035
0.030
0.025
0.020
0.10
0.08
0.06
0.04
0.02
VGS= 2.5V
Id = 5.3A
VGS = 4.5V
30 40
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
10
I
20
V
Gate -to -Source Voltage ( V )
- Drain Current (A )
GS,
D,
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
6
www.irf.com
IRF7607
Micro8 Package Outline
Dimensions are shown in millimeters (inches)
LE AD ASS IG NM ENT S
INC H ES
M ILLIM ETE RS
D IM
D
M IN
M AX
.044
.008
.014
.007
.120
M IN
0.91
0.10
0.25
0.13
2.95
M AX
1.11
0.20
0.36
0.18
3.05
3
- B
-
D
D
7
D
6
D
5
D 1 D 1 D 2 D2
A
.036
.004
.010
.005
.116
A1
B
8
1
8
1
7
6
5
4
8
1
7
6
5
4
3
C
D
e
S ING LE
D U AL
H
E
0.25 (.010)
M
A
M
- A
-
2
3
4
2
3
.0256 BA SIC
.0128 BA SIC
0.65 BA SIC
0.33 BA SIC
2
3
e1
E
S1 G 1 S2 G 2
S
S
S
G
.116
.188
.016
0°
.120
.198
.026
6°
2.95
4.78
0.41
0°
3.05
H
L
5.03
0.66
6°
e
θ
6X
e
1
1
REC O M MEN DE D FO O T PRIN T
θ
1.04
( .041
8X
0.38
8X
A
)
( .015
)
- C
B
-
0.10 (.004)
A
C
L
8X
0.08 (.003)
8X
8X
M
C
A
S
B
S
4.24
.167 )
3.20
( .126
5.28
( .208
(
)
)
NOTES:
1
2
3
DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
CONTROLLING DIMENSION : INCH.
0.65
( .0256 )
6X
DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7501
LOT CODE (XX)
PART NUMBER
DATE CODE (YW)
Y = YEAR
W = WE EK
WW = (1-26) IF PRECEDED BYLAST DIGIT OF CALENDAR YEAR
WOR K
DATE CODE EXAMPLES:
YEAR
Y
WEEK
W
YWW = 9503 = 5C
YWW = 9532 = EF
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
WW = (27-52) IF PRECEDED BYA LETTER
WOR K
YEAR
Y
WEEK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
K
50
51
52
X
Y
Z
www.irf.com
7
IRF7607
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
T E R M IN AL N U M B E R
1
12.3
11.7
(
(
.48 4
.46 1
)
)
8.1
7.9
(
(
.31 8
.31 2
)
)
F E ED D IR E C T IO N
N OTES:
1. OU TLINE CONFOR MS TO EIA-481 & EIA-541.
2. CO NTRO LLING DIM EN SIO N : M ILLIM ETER.
330.00
(12 .9 92)
M A X .
14.4 0
12.4 0
(
(
.566
.488
)
)
N O T E S
1. C O N T R O LLIN G D IM E N S IO N
2. O U TL IN E C O N F O R M S T O E IA -481
:
:
M IL LIM E T ER .
E IA -54 1.
&
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/01
8
www.irf.com
相关型号：
IRF7665S2TR1PBF
Power Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
INFINEON
IRF7700PBF
Power Field-Effect Transistor, 8.6A I(D), 20V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8
INFINEON
©2020 ICPDF网 联系我们和版权申明