IRF7663 [INFINEON]
Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm); 功率MOSFET （ VDSS = -20V ， RDS（ON） = 0.020ohm ）
| 型号： | IRF7663 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=-20V, Rds(on)=0.020ohm) |
| 文件： | 总7页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-91866B
IRF7663
HEXFET® Power MOSFET
●
●
●
●
●
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Trench Technology
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
A
1
2
8
D
S
S
VDSS = -20V
7
D
3
4
6
S
D
5
G
D
RDS(on) = 0.020Ω
Top View
Description
New trench HEXFET power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
withanextremelyefficientandreliabledeviceforuseinawide
varietyofapplications.
The new Micro8 package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applicationswhereprintedcircuitboardspaceisatapremium.
Thelowprofile(<1.1mm)oftheMicro8willallowittofiteasily
intoextremelythinapplicationenvironmentssuchasportable
electronics and PCMCIA cards.
MICRO8
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
Drain-SourceVoltage
-20
V
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-8.2
-6.6
A
-66
PD @TA = 25°C
PD @TA = 70°C
PowerDissipation
1.8
W
PowerDissipation
1.15
LinearDeratingFactor
10
mW/°C
mJ
EAS
Single Pulse Avalanche Energy
Gate-to-SourceVoltage
115
VGS
± 12
V
TJ, TSTG
JunctionandStorageTemperatureRange
-55 to + 150
°C
Thermal Resistance
Parameter
MaximumJunction-to-Ambient
Max.
70
Units
°C/W
RθJA
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1
5 /25/00
IRF7663
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-SourceBreakdownVoltage
-20 ––– –––
V
VGS = 0V, ID = -250uA
∆V(BR)DSS/∆TJ BreakdownVoltageTemp.Coefficient
––– -0.01 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.020
––– ––– 0.040
-0.60 ––– -1.2
14.5 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -4.5V, ID = -7.0A
VGS = -2.5V, ID = -5.1A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -7.0A
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 70°C
VGS = -12V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
GateThresholdVoltage
V
S
ForwardTransconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = 12V
Qg
––– 30
45
ID = -6.0A
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-On Delay Time
––– 5.0 7.5
––– 7.0 10.5
––– 11 –––
––– 100 –––
––– 125 –––
––– 172 –––
––– 2520 –––
––– 615 –––
––– 375 –––
nC VDS = -10V
VGS = -5.0V
VDD = -10V
ID = -6.0A
Rise Time
ns
pF
td(off)
tf
Turn-Off Delay Time
RG = 6.2Ω
RD = 1.64Ω
VGS = 0V
Fall Time
Ciss
Coss
Crss
InputCapacitance
OutputCapacitance
VDS = -10V
ƒ = 1.0MHz
ReverseTransferCapacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
––– ––– -1.8
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– -66
S
VSD
trr
DiodeForwardVoltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– -1.2
––– 70 105
V
TJ = 25°C, IS = -7.0A, VGS = 0V
TJ = 25°C, IF = -2.5A
ns
Qrr
––– 50
75
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
Starting TJ = 25°C, L = 17.8mH
RG = 25Ω, IAS = -3.6A. (See Figure 10)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7663
100
10
1
100
10
1
VGS
VGS
TOP
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
TOP
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
BOTTOM-2.25V
-2.25V
-2.25V
20µs PULSE WIDTH
°
20µs PULSE WIDTH
°
T = 150 C
J
T = 25 C
J
0.1
1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
-8.2A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
V
= -15V
20µs PULSE WIDTH
DS
V
= -4.5V
GS
10
2.0
2.5
3.0
3.5 4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7663
10
8
4000
I
D
= -6.0A
V
= 0V,
f = 1 MHZ
GS
C
= C + C
,
C
SHORTED
V
=-10V
DS
iss
gs
gd
ds
C
= C
rss
gd
C
= C + C
oss
ds
gd
3000
Ciss
6
2000
4
1000
Coss
2
Crss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
0
10
20
30
40
50
10
100
Q , Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 25 C
J
10us
100us
1ms
°
T = 150 C
J
°
T = 25 C
C
J
°
T = 150 C
10ms
V
= 0 V
Single Pulse
GS
1
0.1
1
10
100
0.5
1.0
1.5
2.0
2.5
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7663
9.0
7.5
6.0
4.5
3.0
1.5
0.0
300
240
180
120
60
I
D
TOP
-1.6A
-2.9A
BOTTOM -3.6A
0
25
50
T
75
100
125
°
150
25
50
75
100
125
150
°
, Case Temperature ( C)
Starting T , Junction Temperature ( C)
C
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Maximum Avalanche Energy
Case Temperature
Vs. Drain Current
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
J
x Z
+ T
10
DM
thJC
C
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7663
Package Outline
Micro8
Dimensions are shown in millimeters (inches)
LE A D A S S IG N M E N TS
IN C H E S
M IL LIM E T E R S
D IM
D
M IN
M A X
.044
.008
.014
.007
.120
M IN
0 .91
0 .10
0 .25
0.13
2.95
M A X
1.11
0.20
0.36
0.18
3.05
3
-
B
-
D
D
7
D
6
D
5
D 1 D 1 D 2 D 2
A
.0 36
.0 04
.0 10
.0 05
.1 16
A 1
B
8
1
7
6
5
4
8
1
8
1
7
6
5
4
3
C
D
e
S IN G L E
D U A L
H
E
0.25 (.0 10)
M
A
M
- A
-
2
3
2
3
4
.025 6 B A SIC
.012 8 B A SIC
0 .65 B A S IC
0 .33 B A S IC
2
3
e1
E
S 1 G 1 S 2 G 2
S
S
S
G
.1 16
.1 88
.016
0 °
.120
.198
.0 26
6 °
2.95
4.78
0.41
0°
3.05
H
L
5 .03
0.6 6
6°
e
6X
θ
e
1
1
R E C O M M E N D E D F O O T P R IN T
θ
1.04
0.3 8
8 X
A
( .0 41
8X
)
(
.015 )
-
C -
0.10 (.00 4)
A
C
L
B
8X
0.08 (.0 03)
8X
8X
M
C
A
S
B
S
4.24
.167
3.20
( .1 26
5.28
)
( .2 08
(
)
)
N OTE S:
1
2
3
DIM EN SION ING AND TOLERA NCING P ER AN SI Y 14.5M -1982.
CON TRO LLING DIMEN SIO N : IN CH.
0.65
.02 56 )
6X
(
DIM EN SION S DO NOT IN CLUD E M OLD FLAS H.
Part Marking Information
Micro8
A
DATE C O DE (YW W )
EXAM PLE : THIS IS AN IRF7501
Y = LAST D IGIT O F YEAR
W W = W EEK
451
7501
PAR T N UM BER
TOP
6
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IRF7663
Tape & Reel Information
Micro8
Dimensions are shown in millimeters (inches)
T E R M IN AL N U M B E R
1
12.3
11.7
(
(
.48 4
.46 1
)
)
8.1
7.9
(
(
.31 8
.31 2
)
)
F E ED D IR E C T IO N
N OTES:
1. OU TLINE CONFOR M S TO EIA-481 & EIA-541.
2. CO NTRO LLING DIM EN SIO N : M ILLIM ETER.
330.00
(12 .9 92)
M A X .
14.4 0
12.4 0
(
(
.566
.488
)
)
N O T E S
1. C O N T R O LLIN G D IM E N S IO N
2. O U TL IN E C O N F O R M S T O E IA -481
:
:
M IL LIM E T ER .
E IA -54 1.
&
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http://www.irf.com/
Data and specifications subject to change without notice.
5/00
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7
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