IRF7701GTRPBF [INFINEON]
Transistor;
| 型号： | IRF7701GTRPBF |
| 厂家： | 
Infineon |
| 描述： | Transistor |
| 文件： | 总9页 (文件大小：232K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96146A
IRF7701GPbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel
l Lead-Free
VDSS
RDS(on) max
ID
0.011@VGS = -4.5V
0.015@VGS = -2.5V
0.022@VGS = -1.8V
-10A
-8.5A
-7.0A
-12V
l Halogen-Free
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
nationalRectifier iswellknownfor,providesthedesigner
with an extremely efficient and reliable device for use
in battery and load management.
TheTSSOP-8package, has45%lessfootprintareaofthe
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
TSSOP-8
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-12
Units
V
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-10
-8.0
A
-80
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
1.5
W
Power Dissipation
0.96
Linear Derating Factor
12
mW/°C
VGS
Gate-to-Source Voltage
± 8.0
-55 to + 150
V
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
83
Units
°C/W
RθJA
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1
05/15/09
IRF7701GPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-12 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.006 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.011
––– 0.015
––– 0.022
-0.45 ––– -1.2
21 ––– –––
––– ––– 1.0
––– ––– -25
––– ––– -100
––– ––– 100
––– 69 100
VGS = -4.5V, ID = -10A
VGS = -2.5V, ID = -8.5A
VGS = -1.8V, ID = -7.0A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -10A
Ω
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
VDS = -12V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = -9.6V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -8.0V
IGSS
VGS = 8.0V
ID = -8.0A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 9.1
––– 21
14
32
nC VDS = -9.6V
VGS = -4.5V
––– 19 –––
––– 20 –––
––– 240 –––
––– 220 –––
––– 5050 –––
––– 1520 –––
––– 1120 –––
VDD = -6.0V
ns
ID = -1.0A
td(off)
tf
Turn-Off Delay Time
Fall Time
RD = 6.0Ω
VGS = -4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = -10V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
-1.5
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
-80
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– -1.2
V
TJ = 25°C, IS = -1.5A, VGS = 0V
––– 52
––– 53
78
80
ns
TJ = 25°C, IF = -1.5A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7701GPbF
100
10
1
100
10
VGS
VGS
TOP
-7.00V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
TOP
-7.00V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
BOTTOM-1.0V
1
-1.0V
-1.0V
0.1
0.01
20µs PULSE WIDTH
°
T = 25 C
J
20µs PULSE WIDTH
°
T = 150 C
J
0.1
0.1
0.1
1
10
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.0
-10A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
1.5
1.0
0.5
0.0
10
1
V
= -10V
DS
20µs PULSE WIDTH
V
= -4.5V
GS
0.1
1.0
1.5
2.0
2.5 3.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7701GPbF
8000
10
8
I
D
= -10A
V
C
= 0V,
f = 1 MHZ
GS
V
=-9.6V
= C + C
,
C
ds
SHORTED
DS
iss
gs
gd
C
= C
rss
gd
C
= C + C
ds gd
oss
6000
4000
2000
0
Ciss
6
4
Coss
Crss
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60 80
100
1
10
100
Q , Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
100us
1ms
°
T = 25 C
J
1
10ms
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.2
1
0.1
0.1
0.2
1
10
100
0.4
0.6
0.8
1.0
1.4
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7701GPbF
10.0
8.0
6.0
4.0
2.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
1
0.02
0.01
P
2
DM
t
SINGLE PULSE
(THERMAL RESPONSE)
1
0.1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7701GPbF
0.020
0.015
0.010
0.005
0.05
0.04
V
= -2.5V
GS
0.03
I
= -10A
D
0.02
0.01
0.00
V
= -4.5V
GS
1.5
2.5
3.5
4.5
0
20
40
60
80
100
-V
Gate -to -Source Voltage (V)
-I , Drain Current (A)
GS,
D
Fig 12. Typical On-Resistance Vs. Drain
Fig 11. Typical On-Resistance Vs. Gate
Current
Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRF7701GPbF
40
30
20
10
0
0.80
0.60
0.40
0.20
0.00
I
= -250µA
D
0.01
0.10
1.00
10.00
100.00
-75 -50 -25
0
25
50
75 100 125 150
Time (sec)
T
, Temperature ( °C )
J
Fig 15. Typical Power Vs. Time
Fig 14. Threshold Voltage Vs. Temperature
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7
IRF7701GPbF
TSSOP8 Package Outline
Dimensions are shown in milimeters (inches)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF7701GPbF
TSSOP8 Part Marking Information
TSSOP-8 Tape and Reel Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 05/2009
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9
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