IRF7701TRPBF [INFINEON]
Transistor;
| 型号： | IRF7701TRPBF |
| 厂家： | 
Infineon |
| 描述： | Transistor |
| 文件： | 总9页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93940
IRF7701
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l P-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel
VDSS
RDS(on) max
ID
0.011@VGS = -4.5V
0.015@VGS = -2.5V
0.022@VGS = -1.8V
-10A
-8.5A
-7.0A
-12V
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design , that Inter-
nationalRectifier iswellknownfor,providesthedesigner
with an extremely efficient and reliable device for use
in battery and load management.
1
2
3
4
8
7
6
5
D
S
G
1 =
D
S
S
8 =
7 =
6 =
5 =
D
S
S
2 =
3 =
4 =
G
D
TSSOP-8
TheTSSOP-8package, has45%lessfootprintareaofthe
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1.1mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-12
Units
V
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
±10
±8.0
±80
1.5
A
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
W
Power Dissipation
0.96
12
Linear Derating Factor
mW/°C
VGS
Gate-to-Source Voltage
± 8.0
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Max.
83
Units
°C/W
RθJA
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1
6/21/00
IRF7701
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-12 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.006 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.011
––– ––– 0.015
––– ––– 0.022
-0.45 ––– -1.2
21 ––– –––
––– ––– 1.0
––– ––– -25
––– ––– -100
––– ––– 100
––– 69 100
VGS = -4.5V, ID = -10A
VGS = -2.5V, ID = -8.5A
VGS = -1.8V, ID = -7.0A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -10A
Ω
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
VDS = -12V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
VDS = -9.6V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -8.0V
VGS = 8.0V
ID = -8.0A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 9.1
––– 21
14
32
nC VDS = -9.6V
VGS = -4.5V
––– 19 –––
––– 20 –––
––– 240 –––
––– 220 –––
––– 5050 –––
––– 1520 –––
––– 1120 –––
VDD = -6.0V
ns
ID = -1.0A
td(off)
tf
Turn-Off Delay Time
Fall Time
RD = 6.0Ω
VGS = -4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = -10V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
––– ––– -1.5
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– -80
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– -1.2
V
TJ = 25°C, IS = -1.5A, VGS = 0V
––– 52
––– 53
78
80
ns
TJ = 25°C, IF = -1.5A
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7701
100
10
1
100
10
VGS
VGS
TOP
-7.00V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
TOP
-7.00V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
BOTTOM -1.0V
1
-1.0V
-1.0V
0.1
0.01
20µs PULSE WIDTH
°
T = 25 C
J
20µs PULSE WIDTH
°
T = 150 C
J
0.1
0.1
0.1
1
10
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.0
-10A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
1.5
1.0
0.5
0.0
10
1
V
= -10V
DS
20µs PULSE WIDTH
V
= -4.5V
GS
0.1
1.0
1.5
2.0
2.5 3.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7701
8000
10
8
V
= 0V,
f = 1 MHZ
I = -10A
D
GS
V
=-9.6V
C
= C + C
,
C
ds
SHORTED
DS
iss
gs
gd
C
= C
rss
gd
C
= C + C
oss
ds gd
6000
Ciss
6
4000
4
Coss
2000
Crss
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
0
20
40
60 80
100
10
100
Q , Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
100
10
1
100us
1ms
°
T = 25 C
J
10ms
°
= 25 C
°
= 150 C
Single Pulse
T
A
T
J
V
= 0 V
GS
0.1
0.2
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRF7701
10.0
8.0
6.0
4.0
2.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
1
0.02
0.01
P
DM
t
SINGLE PULSE
(THERMAL RESPONSE)
1
0.1
0.01
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7701
0.020
0.015
0.010
0.005
0.05
0.04
0.03
0.02
0.01
V
= -2.5V
GS
I
= -10A
D
V
= -4.5V
GS
0.00
1.5
2.5
3.5
4.5
0
20
40
60
80
100
-V
Gate -to -Source Voltage (V)
-I , Drain Current (A)
GS,
D
Fig 12. Typical On-Resistance Vs. Drain
Fig 11. Typical On-Resistance Vs. Gate
Current
Voltage
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRF7701
0.80
0.60
0.40
0.20
0.00
40
30
20
10
0
I
= -250µA
D
-75 -50 -25
0
25
50
75 100 125 150
0.01
0.10
1.00
10.00
100.00
T
, Temperature ( °C )
J
Time (sec)
Fig 15. Typical Power Vs. Time
Fig 14. Threshold Voltage Vs. Temperature
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7
IRF7701
TSSOP-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7702
DAT E CODE (YW)
LOT CODE (XX)
TABLE 1
XXYW
7702
PART NUMBER
WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ETC.)
WORK
YEAR
Y
WEEK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
01
02
03
04
A
B
C
D
DATE CODE EXAMPLES:
9503 = 5C
9532 = EF
24
25
26
X
Y
Z
TABLE 2
WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
WORK
YEAR
Y
WE EK
W
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
27
28
29
30
A
B
C
D
K
50
51
52
X
Y
Z
TSSOP-8 Tape and Reel
8LTSSOP (MO-153AA)
Ø 13"
16 mm
16mm
FEED DIRECTION
NOT E S:
1. TAPE & REEL OUTLINE CONFORMS TO EIA-481 & EIA-541.
8 mm
8
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IRF7701
TSSOP-8 Package Outline
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
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9
相关型号：
IRF7703TR
Power Field-Effect Transistor, 6A I(D), 40V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, TSSOP-8
INFINEON
IRF7703TRPBF
Power Field-Effect Transistor, 6A I(D), 40V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, LEAD FREE, TSSOP-8
INFINEON
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