IRF7739L1PBF [INFINEON]
Optimized for Synchronous Rectification;
| 型号： | IRF7739L1PBF |
| 厂家： | 
Infineon |
| 描述： | Optimized for Synchronous Rectification |
| 文件： | 总10页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF7739L1TRPbF
Applications
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l RoHS Compliant, Halogen Free
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
VDSS
VGS
RDS(on)
0.70mΩ@ 10V
Vgs(th)
40V min ±20V max
Qg tot
Qgd
l Optimized for Synchronous Rectification
220nC
81nC
2.8V
l Low Conduction Losses
l High Cdv/dt Immunity
S
S
S
S
l Low Profile (<0.7mm)
S
S
S
S
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
l Industrial Qualified
D
D
G
DirectFET ISOMETRIC
L8
Applicable DirectFET Outline and Substrate Outline
SB
SC
M2
M4
L4
L6
L8
Description
The IRF7739L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling
to maximize thermal transfer in power systems.
The IRF7739L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the
device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance power converters.
Ordering Information
Standard Pack
Base part number
Package Type
Orderable Part Number
Form
Tape and Reel
Quantity
4000
IRF7739L1TRPbF
DirectFET Large Can
IRF7739L1TRPbF
Absolute Maximum Ratings
Max.
40
Parameter
Units
V
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
±20
270
190
46
V
GS
(Silicon Limited)
(Silicon Limited)
(Silicon Limited)
(Package Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
I
@ TC = 25°C
D
D
D
D
@ TC = 100°C
@ TA = 25°C
@ TC = 25°C
A
375
1070
270
160
DM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
10
8
0.93
0.92
0.91
0.90
0.89
0.88
0.87
0.86
0.85
V
= 10V
I
= 160A
GS
D
T
= 25°C
J
6
4
T
= 125°C
7.5
J
2
0
5.0
5.5
V
6.0
6.5
7.0
8.0
0
40
80
120
160
200
I
, Drain Current (A)
D
Gate -to -Source Voltage (V)
GS,
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical On-Resistance vs. Drain Current
Notes:
Click on the hyperlink (to the relevant technical document) for more details.
Click on the hyperlink (to the DirectFET website) for more details
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.021mH, RG = 25Ω, IAS = 160A.
1
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© 2012 International Rectifier
February 13 ,2013
IRF7739L1TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250μA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
40
–––
–––
V
Reference to 25°C, ID = 1.0mA
ΔΒVDSS/ΔTJ
RDS(on)
––– 0.008 –––
V/°C
V
V
GS = 10V, ID = 160A
–––
2.0
0.70
2.8
-6.7
–––
–––
–––
–––
–––
220
46
1.0
4.0
m
Ω
DS = VGS, ID = 250μA
VGS(th)
V
V
/ T
GS(th) Δ
Δ
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
280
–––
–––
–––
–––
–––
–––
–––
–––
––– mV/°C
J
VDS = 40V, VGS = 0V
IDSS
20
250
100
-100
–––
330
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
μA
nA
S
VDS = 32V, VGS = 0V, TJ = 125°C
V
V
V
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
GS = -20V
DS = 10V, ID = 160A
gfs
Qg
VDS = 20V
GS = 10V
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
V
Qgs2
Qgd
19
nC
ID = 160A
See Fig. 9
81
Qgodr
74
Qsw
100
83
V
DS = 16V, VGS = 0V
Qoss
RG
nC
Gate Resistance
1.5
21
Ω
VDD = 20V, VGS = 10V
ID = 160A
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
Rise Time
71
RG=1.8Ω
Turn-Off Delay Time
56
ns
Fall Time
42
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 11880 –––
––– 2510 –––
––– 1240 –––
––– 8610 –––
––– 2230 –––
VDS = 25V
Output Capacitance
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
Output Capacitance
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 32V, f=1.0MHz
Output Capacitance
Diode Characteristics
Conditions
MOSFET symbol
Parameter
Continuous Source Current
Min. Typ. Max. Units
IS
–––
–––
110
showing the
(Body Diode)
A
ISM
integral reverse
Pulsed Source Current
(Body Diode)
–––
––– 1070
p-n junction diode.
TJ = 25°C, IS = 160A, VGS = 0V
TJ = 25°C, IF = 160A, VDD = 20V
di/dt = 100A/μs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
87
1.3
130
380
V
ns
nC
Qrr
250
Notes:
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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© 2012 International Rectifier
February 13 ,2013
IRF7739L1TRPbF
Absolute Maximum Ratings
Parameter
Max.
Units
PD @TC = 25°C
Power Dissipation
125
63
W
PD @TC = 100°C
Power Dissipation
PD @TA = 25°C
Power Dissipation
3.8
TP
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
270
°C
TJ
-55 to + 175
TSTG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
Units
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
40
–––
–––
1.2
0.4
RθJA
RθJA
°C/W
RθJ-Can
RθJ-PCB
–––
–––
Junction-to-PCB Mounted
10
1
D = 0.50
0.20
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.02
0.01
0.1080
0.6140
0.4520
1.47e-05
0.000171
0.053914
0.006099
0.036168
τ
τ
J τJ
τ
Cτ
0.01
0.001
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Notes:
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple incontact with top (Drain) of part.
Used double sided cooling, mounting pad with large heatsink.
R is measured at TJ of approximately 90°C.
θ
Surface mounted on 1 in. square Cu
Mounted on minimum footprint full size board with metalized
board (still air).
back and with small clip heatsink. (still air)
3
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© 2012 International Rectifier
February 13 ,2013
IRF7739L1TRPbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
60μs PULSE WIDTH
≤
Tj = 175°C
60μs PULSE WIDTH
≤
1
Tj = 25°C
4.5V
1
4.5V
1
0.1
0.1
10
100
1000
0.1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
1000
2.0
I
= 160A
= 10V
D
V
GS
100
10
1
T
= 175°C
J
1.5
1.0
0.5
T
= 25°C
J
V
= 25V
DS
≤60μs PULSE WIDTH
0.1
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 160A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
gd
= C + C
V
V
= 32V
= 20V
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
C
oss
rss
1
10
100
0
50
100
150
200
250
300
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 9. Typical Total Gate Charge vs.
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
Gate-to-Source Voltage
4
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February 13 ,2013
IRF7739L1TRPbF
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T = 175°C
J
100μsec
1msec
10msec
T
= 25°C
DC
J
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
2.5
GS
1
1.0
0
1
10
100
0.0
0.5
V
1.0
1.5
2.0
3.0
V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
300
5.0
4.5
4.0
3.5
3.0
2.5
250
200
150
100
50
I
I
I
= 250μA
= 1.0mA
= 1.0A
D
D
D
2.0
1.5
1.0
0
25
50
75
100
125
150
175
-75 -50 -25
0
25 50 75 100 125 150175 200
T
, Case Temperature (°C)
T , Temperature ( °C )
C
J
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 13. Typical Threshold Voltage vs.
Junction Temperature
1100
1000
900
800
700
600
500
400
300
200
100
0
I
D
TOP
29A
46A
BOTTOM 160A
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
© 2012 International Rectifier
5
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February 13 ,2013
IRF7739L1TRPbF
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assumingΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assumingΔΤj = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs. Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 19a, 19b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
300
TOP
BOTTOM 1.0% Duty Cycle
= 160A
Single Pulse
250
200
150
100
50
I
D
0
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Fig 16. Maximum Avalanche Energy vs. Temperature
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·ta
Driver Gate Drive
P.W.
D.U.T
Period
D =
Period
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• di/dt controlled by RG
Re-Applied
Voltage
RG
+
-
• Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs
www.irf.com © 2012 International Rectifier February 13 ,2013
6
IRF7739L1TRPbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
L
V
DS
V
D.U.T
AS
R
GS
G
+
-
V
DD
I
A
20V
t
0.01Ω
p
I
AS
Fig 19a. Unclamped Inductive Test Circuit
Fig 19b. Unclamped Inductive Waveforms
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 20b. Switching Time Waveforms
Fig 20a. Switching Time Test Circuit
7
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© 2012 International Rectifier
February 13 ,2013
IRF7739L1TRPbF
DirectFET Board Footprint, L8 (Large Size Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
D
D
S
S
S
S
S
S
S
S
G
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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© 2012 International Rectifier
February 13 ,2013
IRF7739L1TRPbF
DirectFET Outline Dimension, L8 Outline (LargeSize Can).
Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN
MAX
0.360
0.280
0.236
0.026
0.024
0.048
0.040
0.030
0.017
0.057
0.104
0.215
0.029
0.007
0.003
A
B
C
D
E
F
9.05
6.85
5.90
0.55
0.58
1.18
9.15
7.10
6.00
0.65
0.62
1.22
0.356
0.270
0.232
0.022
0.023
0.046
0.039
0.029
0.015
0.053
0.100
G
H
J
0.98 1.02
0.73 0.77
0.38
1.35
2.55
0.42
1.45
2.65
K
L
L1
M
P
R
5.35 5.45 0.211
0.68
0.09
0.02
0.74
0.17
0.08
0.027
0.003
0.001
DirectFET Part Marking
GATE MARKING
LOGO
+
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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© 2012 International Rectifier
February 13 ,2013
IRF7739L1TRPbF
DirectFET Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
+
NOTE:
Controlling dimensions in mm
Std reel quantity is 4000 parts. (ordered as IRF7739L1TRPBF).
DIMENSIONS
METRIC
REEL DIMENSIONS
IMPERIAL
STANDARD OPTION (QTY 4000)
NOTE: CONTROLLING
DIMENSIONS IN MM
MIN
CODE
MIN
11.90
3.90
15.90
7.40
7.20
9.90
1.50
1.50
MAX
0.476
0.161
0.642
0.299
0.291
0.398
N.C
MAX
12.10
4.10
16.30
7.60
IMPERIAL
METRIC
CODE
MIN
MAX
N.C
MIN
MAX
N.C
A
B
C
D
E
F
4.69
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.900
N.C
330.00
20.20
12.80
1.50
0.154
0.623
0.291
0.283
0.390
0.059
0.059
N.C
N.C
13.20
N.C
0.520
N.C
99.00
N.C
100.00
22.40
18.40
19.40
3.940
0.880
0.720
0.760
7.40
10.10
N.C
G
H
0.650
0.630
16.40
15.90
G
H
0.063
1.60
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Industrial †† *
Qualification level
MSL1
Moisture Sensitivity Level
RoHS Compliant
DirectFET
(per JEDEC J-STD-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
* Industrial qualification standards except autoclave test conditions
Revision History
Date
Comments
2/12/2013
TR1 option removed and Tape & Reel Info updated accordingly. Hyperlinks added throw-out the document
IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10
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© 2012 International Rectifier
February 13 ,2013
相关型号：
IRF7739L2TR1PBF
Power Field-Effect Transistor, 375A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-9
INFINEON
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