IRF7748L1PBF_15 [INFINEON]
Optimized for Synchronous Rectification;
| 型号： | IRF7748L1PBF_15 |
| 厂家： | 
Infineon |
| 描述： | Optimized for Synchronous Rectification |
| 文件： | 总10页 (文件大小：442K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF7748L1TRPbF
DirectFET™ Power MOSFET
Typical values (unless otherwise specified)
Applications
VDSS
VGS
±20V max
Qgd
RDS(on)
1.7m@ 10V
Vgs(th)
RoHS Compliant, Halogen Free
Lead-Free (Qualified up to 260°C Reflow)
Ideal for High Performance Isolated Converter
Primary Switch Socket
60V min
Qg tot
Optimized for Synchronous Rectification
Low Conduction Losses
146nC
40nC
2.9V
High Cdv/dt Immunity
Low Profile (<0.7mm)
S
S
S
S
S
S
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Industrial Qualified
D
D
G
L6
Applicable DirectFET Outline and Substrate Outline
SB
SC
M2
M4
L4
L6
L8
Description
The IRF7748L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor
phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7748L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for sys-
tem reliability improvements, and makes this device ideal for high performance power converters.
Ordering Information
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Tape and Reel
Quantity
4000
IRF7748L1TRPbF
DirectFET Large Can
IRF7748L1TRPbF
Absolute Maximum Ratings
Parameter
Max.
60
±20
148
104
28
Units
VDS
VGS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
V
ID @ TC = 25°C
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
A
IDM
EAS
IAR
592
129
mJ
A
89
8
6
4
2
0
3.0
I
= 89A
D
V
= 6V
GS
2.5
2.0
1.5
1.0
V
= 7V
GS
V
= 10V
= 12V
GS
GS
T
= 125°C
J
V
T
= 25°C
J
0
25
50
75
100
125
150
175
200
2
4
6
8
10
12
14
16
18
20
I
, Drain Current (A)
D
V
Gate -to -Source Voltage (V)
GS,
Fig 2. Typical On-Resistance vs. Drain Current
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.033mH, RG = 50, IAS = 89A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
1
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© 2012 International Rectifier
February 18, 2013
IRF7748L1TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
60 ––– –––
––– 0.022 –––
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 2mA
VDSS/TJ
RDS(on)
–––
2.0
1.7
2.9
2.2
4.0
VGS = 10V, ID = 89A
m
VGS(th)
V
VDS = VGS, ID = 250µA
Gate Threshold Voltage Temp. Coefficient –––
-9.9 ––– mV/°C
VGS(th)/TJ
––– –––
20
VDS =60 V, VGS = 0V
IDSS
IGSS
Drain-to-Source Leakage Current
µA
––– ––– 250
VDS =60V,VGS = 0V,TJ =125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
––– ––– 100
––– ––– -100
176 ––– –––
––– 146 220
V
V
V
GS = 20V
nA
S
GS = -20V
gfs
DS = 10V, ID =89A
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Pre– Vth Gate-to-Source Charge
Post– Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
–––
–––
–––
–––
–––
–––
31
12
40
63
52
82
1.3
19
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 30V
nC VGS = 10V
ID = 89A
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
See Fig.9
nC VDS = 16V,VGS = 0V
VDD = 30V, VGS = 10V
Rise Time
––– 104 –––
ID = 89A
ns
Turn-Off Delay Time
Fall Time
–––
–––
54
77
–––
–––
RG= 1.8
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 8075 –––
––– 1150 –––
––– 540 –––
VGS = 0V
VDS = 50V
ƒ = 1.0MHz
pF
Coss
Coss
Output Capacitance
Output Capacitance
––– 5390 –––
––– 850 –––
VGS=0V, VDS = 1.0V,ƒ =1.0MHz
VGS=0V, VDS = 48V,ƒ =1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max. Units
––– ––– 85
––– ––– 592
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Continuous Source Current
(Body Diode)
IS
A
V
Pulsed Source Current
(Body Diode)
ISM
VSD
Diode Forward Voltage
––– –––
––– 58
1.3
TJ = 25°C,IS = 89A,VGS = 0V
trr
Reverse Recovery Time
Reverse Recovery Charge
–––
ns
TJ = 25°C ,IF = 89A,VDD = 30V
Qrr
––– 113 –––
nC
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%
2
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© 2012 International Rectifier
February 18, 2013
IRF7748L1TRPbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
94
47
PD @TC = 25°C Power Dissipation
PD @TC = 100°C Power Dissipation
W
Power Dissipation
3.3
PD @TA = 25°C
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
270
TP
-55 to + 175
TJ
TSTG
°C
Thermal Resistance
Symbol
Parameter
Typ.
Max.
45
Units
Junction-to-Ambient
–––
12.5
20
RqJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Can
Junction-to-PCB Mounted
–––
–––
1.6
RqJA
°C/W
RqJA
RqJC
RqJA-PCB
–––
–––
0.5
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1 1
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effecꢀve Transient Thermal Impedance, Juncꢀon‐to‐Case
Notes:
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple incontact with top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
R is measured at TJ of approximately 90°C.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink (still air)
Surface mounted on 1 in. square Cu
board (still air).
3
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© 2012 International Rectifier
February 18, 2013
IRF7748L1TRPbF
1000
100
10
1000
100
10
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.25V
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.25V
TOP
TOP
BOTTOM
BOTTOM
4.25V
4.25V
60µs
60µs
Tj = 175°C
PULSE WIDTH
PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V , Drain-to-Source Voltage (V)
DS
DS
Fig 5. Typical Output Characteristics
Fig 4. Typical Output Characteristics
1000
2.0
1.6
1.2
0.8
0.4
V
= 25V
I
= 89A
DS
60µs PULSE WIDTH
D
V
= 10V
GS
100
10
1
T
= 175°C
J
TJ = 25°C
0.1
2
3
4
5
6
7
-60
-20
T
20
60
100
140
180
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics
100000
14
V
C
= 0V,
f = 1 MHZ
GS
I = 89A
D
= C + C , C SHORTED
V
V
= 48V
= 30V
iss
gs
gd ds
DS
DS
12
10
8
C
= C
rss
gd
C
= C + C
VDS= 12V
oss
ds
gd
10000
1000
100
C
iss
C
6
oss
C
4
rss
2
0
1
10
100
0
50
100
150
200
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
4
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© 2012 International Rectifier
February 18, 2013
IRF7748L1TRPbF
10000
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 175°C
J
100µsec
1msec
TJ = 25°C
10msec
DC
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
1.2
GS
0.1
0.1
0.1
1
10
100
0.2
0.4
V
0.6
0.8
1.0
1.4
V
, Drain-to-Source Voltage (V)
DS
, Source-to-Drain Voltage (V)
SD
Fig 11. Maximum Safe Operating Area
Fig 10. Typical Source-Drain Diode Forward Voltage
160
4.5
4.0
3.5
3.0
2.5
2.0
120
80
40
0
I
= 1.0A
D
1.5
1.0
0.5
ID = 10mA
ID = 1.0mA
ID = 250µA
25
50
75
100
125
150
175
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
T
, Case Temperature (°C)
T
C
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 13. Typical Threshold Voltage vs. Junction Temperature
600
I
D
TOP
11.4A
19.1A
500
400
300
200
100
0
BOTTOM 89A
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
© 2012 International Rectifier
5
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February 18, 2013
IRF7748L1TRPbF
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs. Pulse width
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 )
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
19a, 19b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
140
TOP
BOTTOM 1.0% Duty Cycle
= 89A
Single Pulse
120
100
80
60
40
20
0
I
D
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
T
jmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 3)
25
50
75
100
125
150
175
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Starting T , Junction Temperature (°C)
J
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)· av
t
Fig 16. Maximum Avalanche Energy vs. Temperature
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
www.irf.com © 2012 International Rectifier February 18, 2013
6
IRF7748L1TRPbF
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
L
V
DS
D.U.T
AS
R
+
-
G
V
DD
I
A
20V
0.01
t
p
I
AS
Fig 19a. Unclamped Inductive Test Circuit
Fig 19b. Unclamped Inductive Waveforms
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
7
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© 2012 International Rectifier
February 18, 2013
IRF7748L1TRPbF
DirectFET™Board Footprint, L6 Outline (Large Size Can, 6-Source Pads).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
D
D
S
S
S
S
S
S
G
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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© 2012 International Rectifier
February 18, 2013
IRF7748L1TRPbF
DirectFET® Outline Dimension, L6 Outline
(Large Size Can, 6-Source Pads).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN
MAX
0.360
0.280
0.236
0.026
0.024
0.048
0.040
0.030
0.017
0.057
0.104
0.159
0.214
0.029
0.007
0.003
A
B
9.05 9.15
6.85 7.10
5.90 6.00
0.55 0.65
0.58 0.62
1.18 1.22
0.98 1.02
0.73 0.77
0.38 0.42
1.35 1.45
2.55 2.65
3.95 4.05
5.35 5.45
0.68 0.74
0.09 0.17
0.02 0.08
0.356
0.270
0.232
0.022
0.023
0.046
0.039
0.029
0.015
0.053
0.100
0.155
0.210
0.027
0.003
0.001
C
D
E
F
G
H
J
K
L
L1
L2
M
P
R
Dimensions are shown in
millimeters (inches)
DirectFET® Part Marking
GATE MARKING
LOGO
+
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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© 2012 International Rectifier
February 18, 2013
IRF7748L1TRPbF
DirectFET® Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
+
NOTE:
Controlling dimensions in mm
Std reel quantity is 4000 parts. (ordered as IRF7748L1TRPBF).
DIMENSIONS
REEL DIMENSIONS
METRIC
IMPERIAL
STANDARD OPTION (QTY 4000)
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
MIN
MAX
0.476
0.161
0.642
0.299
0.291
0.398
N.C
MIN
MAX
12.10
4.10
METRIC
IMPERIAL
CODE
MIN
A
B
C
D
E
F
4.69
MIN
MAX
N.C
MAX
N.C
11.90
3.90
15.90
7.40
7.20
9.90
1.50
1.50
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.900
N.C
330.00
20.20
12.80
1.50
0.154
0.623
0.291
0.283
0.390
0.059
0.059
N.C
N.C
16.30
7.60
0.520
N.C
13.20
N.C
7.40
99.00
N.C
3.940
0.880
0.720
0.760
100.00
22.40
18.40
19.40
10.10
N.C
G
H
G
H
0.650
0.630
16.40
15.90
1.60
0.063
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Industrial†† *
Qualification Level
MSL1
DirectFET
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D†††)
Yes
†
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
* Industrial qualification standards except autoclave test conditions.
Revision History
Date
Comments
2/13/13 TR1 option removed and Tape & Reel Info updated accordingly. Hyperlinks added throw-out the document
IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245, USA
To contact Internaꢀonal Recꢀfier, please visit hꢁp://www.irf.com/whoto‐call/
10
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© 2012 International Rectifier
February 18, 2013
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