IRF7807TR [INFINEON]
Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
| 型号： | IRF7807TR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD – 91747C
IRF7807/IRF7807A
HEXFET® Chip-Set for DC-DC Converters
• N Channel Application Specific MOSFETs
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
A
D
1
8
S
S
2
3
4
7
6
5
D
• Low Switching Losses
S
D
D
Description
G
These new devices employ advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduced conduction and switching losses make them
ideal for high efficiency DC-DC Converters that power
the latest generation of mobile microprocessors.
SO-8
Vds
Top View
Device Features
IRF7807 IRF7807A
A pair of IRF7807 devices provides the best cost/
performance solution for system voltages, such as 3.3V
and 5V.
30V
30V
25mΩ
17nC
Rds(on) 25mΩ
Qg
17nC
Qsw
Qoss
5.2nC
16.8nC 16.8nC
Absolute Maximum Ratings
Parameter
Symbol
IRF7807
IRF7807A
Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 4.5V)
Pulsed Drain Current
Power Dissipation
VDS
VGS
ID
30
V
±12
25°C
70°C
8.3
6.6
66
8.3
6.6
66
A
IDM
PD
25°C
70°C
2.5
1.6
W
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed source Current
TJ, TSTG
IS
–55 to 150
°C
A
2.5
66
2.5
66
ISM
Thermal Resistance
Parameter
Max.
Units
Maximum Junction-to-Ambient
RθJA
50
°C/W
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1
10/10/00
IRF7807/IRF7807A
Electrical Characteristics
Parameter
IRF7807
IRF7807A
Min Typ Max Min Typ Max Units
Conditions
Drain-to-Source
V(BR)DSS 30
–
–
30
–
–
V
VGS = 0V, ID = 250µA
Breakdown Voltage*
Static Drain-Source
on Resistance*
RDS(on)
17
25
17
25 mΩ VGS = 4.5V, ID = 7A
GateThresholdVoltage* VGS(th) 1.0
1.0
V
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0
Drain-Source Leakage IDSS
Current*
30
30
µA
150
150
VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
Current*
IGSS
±100
17
±100 nA
17
VGS = ±12V
Total Gate Charge*
Qg
12
12
VGS = 5V, ID = 7A
VDS = 16V, ID = 7A
Pre-Vth
Qgs1
2.1
2.1
Gate-Source Charge
Post-Vth
Qgs2
0.76
0.76
nC
Gate-Source Charge
Gate to Drain Charge
Qgd
2.9
2.9
Switch Charge*
(Qgs2 + Qgd)
QSW
3.66 5.2
3.66
Output Charge*
Gate Resistance
Turn-on DelayTime
RiseTime
Qoss
Rg
14 16.8
14 16.8
VDS = 16V, VGS = 0
1.2
12
17
25
6
1.2
12
17
25
6
Ω
td(on)
tr
VDD = 16V
ID = 7A
ns
Turn-off DelayTime
FallTime
td (off)
tf
Rg = 2Ω
VGS = 4.5V
Resistive Load
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Min Typ Max Units
1.2 1.2
Conditions
Diode Forward
Voltage*
VSD
Qrr
V
IS = 7A, VGS = 0V
Reverse Recovery
Charge
80
50
80
50
nC di/dt = 700A/µs
VDS = 16V, VGS = 0V, IS = 7A
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 7A
Reverse Recovery
Charge (with Parallel
Schotkky)
Qrr(s)
Notes:
*
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Devices are 100% tested to these parameters.
2
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IRF7807/IRF7807A
Power MOSFET Selection for DC/DC
Converters
4
Drain Current
Control FET
1
Special attention has been given to the power losses
in the switching elements of the circuit - Q1 and Q2.
Power losses in the high side switch Q1, also called the
Control FET, are impacted by the Rds(on) of the MOSFET,
but these conduction losses are only about one half of
the total losses.
Gate Voltage
t2
t3
t1
VGTH
t0
Power losses in the control switch Q1 are given by;
2
Drain Voltage
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput
This can be expanded and approximated by;
Figure 1: Typical MOSFET switching waveform
2
Synchronous FET
P
I
R
×
ds(on)
=
+
(
)
loss
rms
The power loss equation for Q2 is approximated
by;
Qgd
ig
Qgs2
ig
I
V
f
I
V
f
×
×
×
×
+
×
×
in
in
P
P
P
P*
+
output
=
=
+
loss
conduction
drive
Q
(
V
f
×
+
+
×
)
g
g
2
P
Irms
R
×
ds(on)
loss
( )
Qoss
2
V
f
×
×
in
Q
(
V
f
×
+
×
)
g
g
This simplified loss equation includes the terms Qgs2
and Qoss which are new to Power MOSFET data sheets.
is a sub element of traditional gate-source charge
Qoss
2
V
f
Q
V
×
in
f
×
+
×
×
+
(
)
in
rr
Q
gs2
that is included in all MOSFET data sheets.The impor-
tance of splitting this gate-source charge into two sub
elements, Qgs1 and Qgs2, can be seen from Fig 1.
Qgs2 indicates the charge that must be supplied by
the gate driver between the time that the threshold volt-
age has been reached (t1) and the time the drain cur-
rent rises to Idmax (t2) at which time the drain voltage
begins to change. Minimizing Qgs2 is a critical factor in
reducing switching losses in Q1.
*dissipated primarily in Q1.
Qoss is the charge that must be supplied to the output
capacitance of the MOSFET during every switching
cycle. Figure 2 shows how Qoss is formed by the paral-
lel combination of the voltage dependant (non-linear)
capacitance’s Cds and Cdg when multiplied by the power
supply input buss voltage.
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3
IRF7807/IRF7807A
For the synchronous MOSFET Q2, Rds(on) is an im-
portant characteristic;however, once again the impor-
tance of gate charge must not be overlooked since it
impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Qoss and re-
verse recovery charge Qrr both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
the MOSFET on, resulting in shoot-through current .
The ratio of Qgd/Qgs1 must be minimized to reduce the
potential for Cdv/dt turn on.
Spice model for IRF7807 can be downloaded in ma-
chine readable format at www.irf.com.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions be-
tween ground and Vin. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
Figure 2: Qoss Characteristic
Typical Mobile PC Application
The performance of these new devices has been tested
in circuit and correlates well with performance predic-
tions generated by the system models. An advantage
of this new technology platform is that the MOSFETs
it produces are suitable for both control FET and syn-
chronous FET applications. This has been demon-
strated with the 3.3V and 5V converters. (Fig 3 and
Fig 4). In these applications the same MOSFET IRF7807
was used for both the control FET (Q1) and the syn-
chronous FET (Q2). This provides a highly effective
cost/performance solution.
3.3V Supply : Q1=Q2=IRF7807
5V Supply : Q1=Q2=IRF7807
93
92
91
90
89
88
87
95
94
93
92
91
Vin = 10V
Vin = 10V
86
Vin = 14V
90
Vin = 14V
85
Vin = 24V
Vin=24V
89
84
1
1.5
2
2.5
3
3.5
4
4.5
5
1
1.5
2
2.5
3
3.5
4
4.5
5
Load Current (A)
Load Current (A)
Figure 3
Figure 4
4
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IRF7807/IRF7807A
Typical Characteristics
IRF7807
IRF7807A
Figure 5. Normalized On-Resistance vs.Temperature
Figure 6. Normalized On-Resistance vs.Temperature
Figure 7.Typical Gate Charge vs.Gate-to-SourceVoltage
Figure 8.Typical Gate Charge vs.Gate-to-Source Voltage
Figure 9.Typical Rds(on) vs.Gate-to-SourceVoltage
Figure 10.Typical Rds(on) vs.Gate-to-SourceVoltage
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5
IRF7807/IRF7807A
IRF7807
IRF7807A
10
10
°
°
T = 150 C
T = 150 C
J
J
1
1
°
°
T = 25 C
T = 25 C
J
J
V
= 0 V
V
= 0 V
GS
GS
0.1
0.4
0.1
0.4
0.5
0.6
0.7
0.8
0.9
0.5
0.6
0.7
0.8
0.9
V
,Source-to-Drain Voltage (V)
V
,Source-to-Drain Voltage (V)
SD
SD
Figure 11.Typical Source-Drain Diode ForwardVoltage
Figure 12.Typical Source-Drain Diode ForwardVoltage
100
D = 0.50
0.20
10
0.10
0.05
0.02
P
DM
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Figure 13. Maximum EffectiveTransientThermal Impedance, Junction-to-Ambient
6
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IRF7807/IRF7807A
Package Outline
SO-8 Outline
Part Marking Information
SO-8
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7
IRF7807/IRF7807A
Tape & Reel Information
SO-8
Dimensions are shown in millimeters (inches)
TER M IN AL N U M BE R
1
12.3 ( .484
11.7 ( .461
)
)
8.1 ( .318
7.9 ( .312
)
)
FEED D IRE C TIO N
N O TES :
1 . C O N TR O L LIN G D IM EN SIO N : M ILL IM ETER .
2 . A LL D IM EN SIO N S A RE SH O W N IN M ILL IM ETER S(INC H ES).
3 . O UTL IN E C O N FO R M S TO EIA -4 81 & EIA-54 1.
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
N O TE S :
1. C O N TR O LLIN G D IM EN SIO N : M ILLIM ETER .
2. O UTLIN E C O N FO RM S TO EIA -481 & EIA-541.
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Data and specifications subject to change without notice. 10/00
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相关型号：
IRF7807TRPBF-1
Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
INFINEON
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