IRF7809AVPBF-1 [INFINEON]
Industry-standard pinout SO-8 Package;
| 型号： | IRF7809AVPBF-1 |
| 厂家： | 
Infineon |
| 描述： | Industry-standard pinout SO-8 Package |
| 文件： | 总8页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF7809AVPbF-1
HEXFET® Power MOSFET
DEVICE CHARACTERISTICSꢀ
A
A
D
IRF7809AV
1
2
3
4
8
7
S
S
S
G
RDS
QG
7.0mΩ
41nC
14nC
30nC
(on)
D
6
5
D
D
Qsw
Qoss
SO-8
Top View
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Form
Tube/Bulk
Base Part Number
Package Type
Orderable Part Number
Quantity
95
4000
IRF7809AVPbF-1
IRF7809AVTRPbF-1
IRF7809AVPbF-1
SO-8
Tape and Reel
Absolute Maximum Ratings
Parameter
Symbol
VDS
IRF7809A V
Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (VGS ≥ 4.5V)
Pulsed Drain Current
Power Dissipation
30
±12
V
VGS
TA = 25°C
TL = 90°C
ID
13.3
14.6
100
A
IDM
PD
TA = 25°C
TL = 90°C
2.5
W
3.0
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
TJ,TSTG
IS
–55 to 150
2.5
°C
A
ISM
50
Thermal Resistance
Parameter
Max.
50
Units
°C/W
°C/W
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
RθJA
RθJL
20
1
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IRF7809AVPbF-1
Electrical Characteristics
Parameter
Min Typ Max Units
Conditions
Drain-to-Source
Breakdown Voltage
BVDSS
30
–
–
V
mΩ
V
VGS = 0V, ID = 250μA
Static Drain-Source
on Resistance
RDS
7.0
9.0
VGS = 4.5V, ID = 15A
(on)
Gate Threshold Voltage
VGS(th)
IDSS
1.0
VDS = VGS,ID = 250μA
Drain-Source Leakage
30
VDS = 24V, VGS = 0
Current
150
μA
VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
Current*
IGSS
±100
nA
VGS = ±12V
Total Gate Chg Cont FET
Total Gate Chg Sync FET
QG
41
36
62
54
VGS=5V, ID=15A, VDS=20V
VGS = 5V, VDS< 100mV
VDS = 20V, ID = 15A
QG
Pre-Vth
QGS1
7.0
Gate-Source Charge
Post-Vth
QGS2
2.3
nC
Gate-Source Charge
Gate to Drain Charge
Switch Chg(Qgs2 + Qgd)
Output Charge*
QGD
Qsw
Qoss
RG
12
14
ID=15A, VDS=16V
VDS = 16V, VGS = 0
21
45
30
Gate Resistance
Turn-on Delay Time
Rise Time
1.5
14
3.0
Ω
td (on)
tr
td (off)
tf
VDD = 16V, ID = 15A
VGS = 5V
36
ns
Turn-off Delay Time
Fall Time
96
Clamped Inductive Load
10
Input Capacitance
Output Capacitance
Ciss
Coss
–
3780
1060
–
–
–
–
pF
–
VDS = 16V, VGS = 0
Reverse Transfer Capacitance
Crss
130
Source-Drain Rating & Characteristics
Parameter
Min Typ Max Units
Conditions
Diode Forward
Voltage*
VSD
Qrr
1.3
V
IS = 15A, VGS = 0V
Reverse Recovery
Charge
120
150
nC
di/dt ~ 700A/μs
VDS = 16V, VGS = 0V, IS = 15A
Reverse Recovery
Charge (with Parallel
Schottky)
Qrr(s)
nC
di/dt = 700A/μs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Notes:
ꢀ
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Typical values measured at VGS = 4.5V, IF = 15A.
2
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June 23, 2014
IRF7809AVPbF-1
1000
100
10
1000
100
10
VGS
VGS
10V
TOP
10V
TOP
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
BOTTOM 2.5V
2.5V
2.5V
20μs PULSE WIDTH
T = 150 C
J
20μs PULSE WIDTH
°
°
T = 25 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
1000
15A
=
I
D
1.5
1.0
0.5
0.0
100
°
T = 150 C
J
°
T = 25 C
J
V
= 15V
DS
20μs PULSE WIDTH
V
= 10V
GS
10
2.4
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
2.6
2.8
3.0 3.2
3.4
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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June 23, 2014
IRF7809AVPbF-1
6000
5000
4000
3000
2000
1000
0
10
8
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
I =
15A
D
C
= C + C
iss
gs
gd ,
V
= 20V
DS
C
= C
rss
gd
C
= C + C
oss
ds
gd
C
iss
6
4
C
C
oss
2
rss
0
1
10
100
0
10
20
30
40
50
60
70
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10us
100us
1ms
°
T = 25 C
J
1
10ms
°
T = 25 C
A
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.8
0.1
0.2
1
0.1
0.6
SD
1.0
1.4
2.2
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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June 23, 2014
IRF7809AVPbF-1
RD
16
12
8
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
1
0.02
0.01
P
2
DM
t
1
0.1
0.01
SINGLE PULSE
t
2
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
2. Peak T =P
J
t / t
1
x Z
+ T
thJA A
DM
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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June 23, 2014
IRF7809AVPbF-1
0.008
0.007
0.006
0.005
0.012
0.010
0.008
0.006
V
= 4.5V
GS
I
= 15A
D
V
= 10V
GS
0
20
40
60
80
100
120
2.5
3.0
3.5
4.0
4.5
I
, Drain Current (A)
V
Gate -to -Source Voltage (V)
D
GS,
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.3μF
VGS
.2μF
12V
Q
Q
GD
GS
+
500
V
DS
D.U.T.
I
-
D
V
G
TOP
6.7A
9.5A
BOTTOM 15A
V
GS
3mA
Charge
400
300
200
100
0
I
I
D
G
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
+
L
t
p
V
DS
D.U.T
AS
R
G
V
DD
-
25
50
75
100
125
150
I
A
20V
°
Starting T , Junction Temperature ( C)
Ω
0.01
t
p
J
I
AS
Fig 14c. Maximum Avalanche Energy
Fig 14a&b. Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
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IRF7809AVPbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
INCHES
MILLIMETERS
DIM
D
B
MIN
.0532
A1 .0040
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
A
E
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 BASIC
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
FOOTPRINT
NOTES:
1. DIMENSIONING& TOLERANCINGPER ASME Y14.5M-1994.
2. CONTROLLINGDIMENSION: MILLIMETER
8X 0.72 [.028]
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OU T L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
DIMENSION IS THE LENGT H OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEE K
A= ASSEMBLY SITE CODE
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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June 23, 2014
IRF7809AVPbF-1
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Qualification information†
Industrial
(per JEDEC JESD47F†† guidelines)
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
SO-8
(per JEDEC J-STD-020D††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
TocontactInternationalRectifier, pleasevisithttp://www.irf.com/whoto-call/
8
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June 23, 2014
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INFINEON
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