IRF7842PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7842PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95269
IRF7842PbF
HEXFET® Power MOSFET
Applications
l Synchronous MOSFET for Notebook
Processor Power
VDSS
40V
RDS(on) max
Qg (typ.)
33nC
5.0m @VGS = 10V
l Secondary Synchronous Rectification
for Isolated DC-DC Converters
l Synchronous Fet for Non-Isolated
DC-DC Converters
A
A
D
1
8
S
2
7
S
D
l Lead-Free
3
6
S
D
4
5
G
D
Benefits
SO-8
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
Top View
l Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
Max.
40
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
V
V
± 20
18
GS
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
14
A
140
2.5
1.6
DM
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
W
D
D
Power Dissipation
Linear Derating Factor
Operating Junction and
0.02
W/°C
°C
T
-55 to + 150
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
Rθ
Rθ
°C/W
JL
–––
50
JA
Notes through ꢀ are on page 9
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1
09/21/04
IRF7842PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
40 ––– –––
Conditions
VGS = 0V, ID = 250µA
BVDSS
V
∆ΒVDSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient ––– 0.037 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
–––
–––
4.0
4.7
5.0
5.9
V
GS = 10V, ID = 17A
VGS = 4.5V, ID = 14A
VDS = VGS, ID = 250µA
Ω
m
VGS(th)
Gate Threshold Voltage
1.35 –––
2.25
V
∆
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– - 5.6 ––– mV/°C
IDSS
–––
–––
–––
–––
81
–––
–––
–––
1.0
150
100
µA VDS = 32V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125°C
nA VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
––– -100
V
GS = -20V
gfs
Qg
–––
33
–––
50
S
VDS = 20V, ID = 14A
–––
–––
–––
–––
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
9.6
2.8
10
–––
–––
–––
VDS = 20V
Qgs2
Qgd
nC VGS = 4.5V
ID = 14A
Qgodr
Gate Charge Overdrive
––– 10.6 –––
––– 12.8 –––
Qsw
Switch Charge (Qgs2 + Qgd)
Qoss
RG
Output Charge
–––
–––
–––
–––
–––
–––
18
1.3
14
–––
TBD
–––
–––
–––
–––
nC VDS = 16V, VGS = 0V
Gate Resistance
Turn-On Delay Time
Rise Time
Ω
td(on)
tr
td(off)
tf
VDD = 20V, VGS = 4.5V
12
ID = 14A
Turn-Off Delay Time
Fall Time
21
ns Clamped Inductive Load
5.0
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 4500 –––
V
GS = 0V
–––
–––
680
310
–––
–––
pF
VDS = 20V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
Max.
Units
mJ
EAS
IAR
50
14
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
3.1
MOSFET symbol
(Body Diode)
A
showing the
ISM
Pulsed Source Current
–––
–––
140
integral reverse
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
99
1.0
150
17
V
T = 25°C, I = 14A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
ns T = 25°C, I = 14A, VDD = 20V
J F
Qrr
di/dt = 100A/µs
11
nC
2
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IRF7842PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
BOTTOM
BOTTOM
2.5V
1
2.5V
≤
≤
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.0
2.0
1.5
1.0
0.5
I
= 18A
D
V
= 10V
GS
100.0
10.0
1.0
T
= 150°C
J
T
= 25°C
= 25V
J
V
DS
≤
60µs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7842PbF
100000
12
10
8
V
= 0V,
= C
f = 1 MHZ
GS
I = 14A
D
C
C
C
+ C , C
SHORTED
V
= 30V
iss
gs
gd
ds
DS
VDS= 20V
= C
rss
oss
gd
= C + C
ds
gd
10000
1000
100
Ciss
6
4
Coss
Crss
2
0
0
20
40
60
80
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100.0
10.0
1.0
T
= 150°C
J
1msec
T
= 25°C
J
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0
1
10
100
1000
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7842PbF
2.4
2.0
1.6
1.2
0.8
0.4
18
16
14
12
10
8
I
= 250µA
D
6
4
2
0
-75 -50 -25
0
25
50
75 100 125 150
25
50
75
100
125
150
T
, Temperature ( °C )
T
J
, Junction Temperature (°C)
J
Fig 10. Threshold Voltage Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
D = 0.50
0.20
10
1
0.10
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
0.1
Ri (°C/W) τi (sec)
τ
J τJ
τ
τ
Cτ
10.48
26.83
12.69
0.138167
1.8582
44.8
τ
1τ1
τ
2 τ2
3τ3
0.01
0.001
0.0001
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7842PbF
200
160
120
80
16
12
8
I
I
= 18A
D
D
TOP
6.7A
7.5A
14A
BOTTOM
T
= 125°C
J
4
T = 25°C
J
40
0
0
2.0
4.0
6.0
8.0
10.0
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 12. On-Resistance Vs. Gate Voltage
Fig 13c. Maximum Avalanche Energy
Vs. Drain Current
15V
LD
VDS
DRIVER
+
L
V
DS
+
-
VDD
D.U.T
AS
R
G
V
DD
-
D.U.T
I
A
V
GS
VGS
Ω
0.01
t
p
Pulse Width < 1µs
Duty Factor < 0.1%
Fig 13a. Unclamped Inductive Test Circuit
Fig 14a. Switching Time Test Circuit
VDS
V
(BR)DSS
t
p
90%
10%
VGS
td(on)
td(off)
tr
tf
I
AS
Fig 14b. Switching Time Waveforms
Fig 13b. Unclamped Inductive Waveforms
6
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IRF7842PbF
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
-
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
-
+
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Current Regulator
Vds
Same Type as D.U.T.
Vgs
50KΩ
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 17. Gate Charge Waveform
Fig 16. Gate Charge Test Circuit
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7
IRF7842PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
.013
8
1
7
2
6
3
5
4
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
0.25 [.010]
A
.1497
.050 BASIC
1.27 BASIC
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
FOOTPRINT
8X 0.72 [.028]
NOTES:
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.
2. CONTROLLING DIMENS ION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JE DE C OUT L INE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROT RUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROT RUSIONS NOT TO EXCEED 0.25 [.010].
DIMENS ION IS T HE LENGTH OF LEAD FOR S OLDERING TO
A SUBS TRAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DE S IGNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
XXXX
F7101
WW = WE E K
INTERNATIONAL
RECTIFIER
LOGO
A = ASSEMBLYSITE CODE
LOT CODE
PART NUMBER
8
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IRF7842PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board
Rθ is measured at TJ approximately 90°C
ꢀ
Starting TJ = 25°C, L = 0.5mH
RG = 25Ω, IAS = 14A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
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9
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