IRF7946PBF_技术文档

StrongIRFET

IRF7946PbF

DirectFET^®Power MOSFET

Applications

l Brushed Motor drive applications

l BLDC Motor drive applications

l Battery powered circuits

l Half-bridge and full-bridge topologies

l Synchronous rectifier applications

l Resonant mode power supplies

l OR-ing and redundant power switches

l DC/DC and AC/DC converters

l DC/AC Inverters

V_DSS

R_DS(on)typ.

max.

40V

1.1m

1.4m

Ω

I_D

198A

90A

(Silicon Limited)

I_D

(Package Limited)

G

S

D

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

DirectFET ISOMETRIC

MX

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l RoHS Compliant Containing no Lead, no Bromide

and no Halogen

Standard Pack

Form

Tape and Reel

Base part number

Package Type

Complete Part Number

Quantity

IRF7946TRPbF

DirectFET MX

4800

IRF7946TRPbF

6.0

4.0

2.0

0.0

200

150

100

50

I

= 90A

D

Limited By Package

T

= 125°C

J

T

= 25°C

J

0

4

6

8

10

12 14 16

18 20

25

50

75

, Case Temperature (°C)

C

100

125

150

T

V

Gate -to -Source Voltage (V)

GS,

Fig 2. Maximum Drain Current vs. Case Temperature

Submit Datasheet Feedback November 25, 2014

Fig 1. Typical On-Resistance vs. Gate Voltage

1

IRF7946PbF

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Parameter

Max.

198

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Pulsed Drain Current

125

A

793

Maximum Power Dissipation

Linear Derating Factor

96

P_D@T_C= 25°C

W

W/°C

V

0.77

Gate-to-Source Voltage

± 20

V_GS

Operating Junction and

-55 to + 150

T_J

°C

Storage Temperature Range

T_STG

Avalanche Characteristics

Single Pulse Avalanche Energy

Avalanche Current

E_{AS (Thermally limited)}

85

mJ

E_{AS (Thermally limited)}

200

I_AR

See Fig. 14, 15, 22a, 22b

A

Repetitive Avalanche Energy

E_AR

mJ

Thermal Resistance

Symbol

Parameter

Junction-to-Ambient

Junction-to-Case

Typ.

–––

12.5

20

Max.

45

Units

R_θJA

–––

1.3

R_θJA

°C/W

R_θJA

R_θJC

–––

1.0

Junction-to-PCB Mounted

–––

R_θJA-PCB

Static @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Min.

40

Typ.

–––

0.03

1.1

Max. Units

Conditions

V_GS= 0V, I_D= 250μA

V/°C Reference to 25°C, I_D= 1.0mA

V_(BR)DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

–––

1.4

V

ΔV_(BR)DSS/ΔT_J

–––

mΩ

V

R_DS(on)

V_GS= 10V, I_D= 90A

_GS= 6.0V, I_D= 72A

V_DS= V_GS, I_D= 150μA

_DS= 40V, V_GS= 0V

_DS= 40V, V_GS= 0V, T_J= 125°C

V_GS= 20V

_GS= -20V

1.7

–––

3.9

V

V_GS(th)

I_DSS

Gate Threshold Voltage

2.2

–––

3.0

Drain-to-Source Leakage Current

–––

0.67

1.0

μA

V

150

100

-100

–––

V

I_GSS

R_G

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

nA

V

Ω

Notes:

T_Cmeasured with thermocouple mounted to top (Drain) of part.

Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

Used double sided cooling , mounting pad with large heatsink.

Mounted on minimum

footprint full size board with

metalized back and with small

Mounted to a PCB with

small clip heatsink (still air)

Surface mounted on 1 in. square Cu

clip heatsink (still air)

(still air).

2

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November 25, 2014

IRF7946PbF

Dynamic @ T_J= 25°C (unless otherwise specified)

Symbol Parameter

Forward Transconductance

Min.

91

Typ.

–––

141

36

Max. Units

Conditions

gfs

–––

212

–––

S

V_DS= 10V, I_D= 90A

I_D= 90A

Q_g

Total Gate Charge

–––

nC

Q_gs

Q_gd

Q_sync

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Total Gate Charge Sync. (Q_g- Q_gd

Turn-On Delay Time

Rise Time

V

_DS=20V

_GS= 10V

44

)

97

I_D= 90A, V_DS=0V, V_GS= 10V

V_DD= 20V

20

ns

49

I_D= 30A

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

54

R

_G= 2.7Ω

41

V_GS= 10V

C_iss

C_oss

C_rss

Input Capacitance

6852

1046

735

1307

1465

pF

V_GS= 0V

Output Capacitance

Reverse Transfer Capacitance

V_DS= 25V

ƒ = 1.0 MHz

Effective Output Capacitance (Energy Related)

Effective Output Capacitance (Time Related)

C_osseff. (ER)

C_osseff. (TR)

V

_GS= 0V, V_DS= 0V to 32V

V_GS= 0V, V_DS= 0V to 32V

Diode Characteristics

Symbol

Parameter

Min.

Typ.

Max. Units

Conditions

D

S

96

I_S

Continuous Source Current

–––

A

V

MOSFET symbol

(Body Diode)

showing the

G

I_SM

Pulsed Source Current

–––

793

integral reverse

(Body Diode)

p-n junction diode.

V_SD

dv/dt

t_rr

Diode Forward Voltage

Peak Diode Recovery

–––

0.75

1.6

49

1.2

–––

T_J= 25°C, I_S= 90A, V_GS= 0V

V/ns T_J= 175°C, I_S= 90A, V_DS= 40V

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ns

nC

A

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

T_J= 25°C

V_R= 34V,

50

I_F= 90A

di/dt = 100A/μs

Q_rr

74

73

I_RRM

2.6

Notes:

ꢀ Pulse width ≤ 400μs; duty cycle ≤ 2%.

C_osseff. (TR) is a fixed capacitance that gives the same charging time

as C_osswhile V_DSis rising from 0 to 80% V_DSS

C_osseff. (ER) is a fixed capacitance that gives the same energy as

C_osswhile V_DSis rising from 0 to 80% V_DSS

Calculated continuous current based on maximum allowable

junction temperature. Package limit is 90A.

Repetitive rating; pulse width limited by max. junction

temperature.

.

Limited by T_Jmax, starting T_J= 25°C, L = 0.021mH

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom

mended footprint and soldering techniques refer to application note #AN-994.

R_θis measured at T_Japproximately 90°C.

R_G= 50Ω, I_AS= 90A, V_GS=10V.

I_SD≤ 90A, di/dt ≤ 1135A/μs, V_DD≤ V_(BR)DSS, T_J≤ 150°C.

Limited by T_Jmaxstarting T_J= 25°C, L= 1mH, R_G= 50Ω, I_AS= 20A, V_GS=10V

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IRF7946PbF

1000

100

10

1000

100

10

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

TOP

BOTTOM

4.5V

60μs PULSE WIDTH

≤

60μs PULSE WIDTH

≤

Tj = 150°C

Tj = 25°C

1

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 3. Typical Output Characteristics

Fig 4. Typical Output Characteristics

1000

1.8

1.6

1.4

1.2

1.0

0.8

0.6

I

= 90A

D

V

= 10V

GS

100

10

T = 150°C

J

T

= 25°C

J

V

= 10V

DS

≤60μs PULSE WIDTH

1.0

2

3

4

5

6

7

8

-60 -40 -20

0

20 40 60 80 100 120140 160

T

J

, Junction Temperature (°C)

V

, Gate-to-Source Voltage (V)

GS

Fig 6. Normalized On-Resistance vs. Temperature

Fig 5. Typical Transfer Characteristics

100000

10000

1000

14.0

V

= 0V,

= C

f = 1 MHZ

GS

I = 90A

D

C

+ C , C

SHORTED

ds

iss

gs

gd

12.0

= C

rss

oss

gd

= C + C

V

= 32V

= 20V

DS

ds

gd

10.0

8.0

6.0

4.0

2.0

0.0

C

iss

C

oss

rss

100

1

10

, Drain-to-Source Voltage (V)

100

0

20 40 60 80 100 120 140 160 180

, Total Gate Charge (nC)

V

DS

Q

G

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage

Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage

November 25, 2014

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IRF7946PbF

1000

100

10

10000

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R

(on)

DS

100μsec

T

= 150°C

1msec

J

Limited by

Package

10msec

DC

T

= 25°C

J

1

Tc = 25°C

0.1

Tj = 150°C

Single Pulse

V

GS

= 0V

1.0

0.01

0.1

1

10

100

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

, Source-to-Drain Voltage (V)

V

, Drain-to-Source Voltage (V)

V

DS

SD

Fig 10. Maximum Safe Operating Area

Fig 9. Typical Source-Drain Diode

Forward Voltage

1.4

48

47

46

45

44

43

42

41

40

Id = 1.0mA

V

= 0V to 32V

DS

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0

5

10 15 20 25 30 35 40 45

Drain-to-Source Voltage (V)

-60 -40 -20

0

20 40 60 80 100 120140 160

T , Temperature ( °C )

J

V

DS,

Fig 11. Drain-to-Source Breakdown Voltage

Fig 12. Typical C_OSSStored Energy

10.0

V

= 5.5V

= 6.0V

= 7.0V

= 8.0V

=10V

GS

V

8.0

6.0

4.0

2.0

0.0

0

200

400

600

800

1000

I , Drain Current (A)

D

Fig 13. Typical On-Resistance vs. Drain Current

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5

November 25, 2014

IRF7946PbF

10

1

D = 0.50

0.20

0.10

0.05

0.1

0.02

0.01

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE

( THERMAL RESPONSE )

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

100

10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔTj = 125°C and

Tstart =25°C (Single Pulse)

1

Allowed avalanche Current vs avalanche

pulsewidth, tav, assumingΔΤ j = 25°C and

Tstart = 125°C.

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

90

80

70

60

50

40

30

20

10

0

Notes on Repetitive Avalanche Curves , Figures 14, 15:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of T_jmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

4. P_{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).

6. I_av= Allowable avalanche current.

7. ΔT = Allowable rise in junction temperature, not to exceed T_jmax(assumed as

25°C in Figure 14, 15).

t_{av =}Average time in avalanche.

D = Duty cycle in avalanche = t_av·f

TOP

BOTTOM 1.0% Duty Cycle

= 90A

Single Pulse

I

D

Z_thJC(D, t_av) = Transient thermal resistance, see Figures 13)

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

I_av= 2DT/ [1.3·BV·Z_th]

25

50

75

100

125

150

E_{AS (AR)}= P_{D (ave)}·t_av

Starting T , Junction Temperature (°C)

J

Fig 16. Maximum Avalanche Energy vs. Temperature

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6

November 25, 2014

IRF7946PbF

16

14

12

10

8

4.0

3.5

3.0

2.5

2.0

1.5

1.0

I = 54A

F

V

= 34V

R

T = 25°C

J

T = 125°C

J

I

= 150μA

= 1.0mA

= 1.0A

D

6

4

2

0

200

400

600

800

1000

-75 -50 -25

0

25 50 75 100 125 150

di /dt (A/μs)

T , Temperature ( °C )

F

J

Fig. 18 - Typical Recovery Current vs. di_f/dt

Fig 17. Threshold Voltage vs. Temperature

16

350

I = 90A

F

I = 54A

F

14

V

= 34V

V

= 34V

R

300

250

200

150

100

50

T = 25°C

J

12

10

8

T = 125°C

J

T = 125°C

J

6

4

2

0

200

400

600

800

1000

0

200

400

600

800

1000

di /dt (A/μs)

F

Fig. 19 - Typical Recovery Current vs. di_f/dt

Fig. 20 - Typical Stored Charge vs. di_f/dt

400

I = 90A

F

V

350

300

250

200

150

100

50

= 34V

R

T = 25°C

J

T = 125°C

J

0

200

400

600

800

1000

di /dt (A/μs)

F

Fig. 21 - Typical Stored Charge vs. di_f/dt

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November 25, 2014

IRF7946PbF

Driver Gate Drive

P.W.

Period

D.U.T

Period

D =

+

-

*

=10V

V

GS

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

V_DD

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

+

-

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Current

Inductor Curent

I

SD

Ripple

≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

V

(BR)DSS

15V

t

p

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

2V0_GV_S

Ω

0.01

t

p

I

AS

Fig 22b. Unclamped Inductive Waveforms

Fig 22a. Unclamped Inductive Test Circuit

R_D

V_DS

V

DS

90%

V_GS

D.U.T.

R_G

+

V_DD

-

10V

V_GS

10%

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

V

GS

t

r

t

f

d(on)

d(off)

Fig 23a. Switching Time Test Circuit

Fig 23b. Switching Time Waveforms

Id

Current Regulator

Same Type as D.U.T.

Vds

Vgs

50KΩ

.2μF

12V

.3μF

+

V

DS

D.U.T.

-

Vgs(th)

V

GS

3mA

I

D

G

Qgs1

Qgs2

Qgd

Qgodr

Current Sampling Resistors

Fig 24a. Gate Charge Test Circuit

Fig 24b. Gate Charge Waveform

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8

IRF7946PbF

DirectFET^®Board Footprint, MX Outline

(Medium Size Can, X-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

G=GATE

D=DRAIN

S=SOURCE

D

S

G

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

9

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IRF7946PbF

DirectFET^®Outline Dimension, MX Outline

(Medium Size Can, X-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes

all recommendations for stencil and substrate designs.

DIMENSIONS

METRIC

IMPERIAL

CODE MIN MAX

MIN MAX

A

B

C

D

E

F

6.25 6.35 0.246 0.250

4.80 5.05 0.189 0.199

3.85 3.95 0.152 0.156

0.35 0.45 0.014 0.018

0.68 0.72 0.027 0.028

1.38 1.42 0.054 0.056

0.80 0.84 0.031 0.033

0.38 0.42 0.015 0.017

0.88 1.02 0.035 0.040

2.28 2.42 0.090 0.095

0.59 0.70 0.023 0.028

0.03 0.08 0.001 0.003

0.08 0.17 0.003 0.007

G

H

J

K

L

M

R

P

Dimensions are shown in

millimeters (inches)

DirectFET^®Part Marking

GATE MARKING

LOGO

PART NUMBER

BATCH NUMBER

DATE CODE

Line above the last character of

the date code indicates "Lead-Free"

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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November 25, 2014

IRF7946PbF

DirectFET^®Tape & Reel Dimension (Showing component orientation).

NOTE: Controlling dimensions in mm Std reel.

quantity is 4800 parts. (ordered as IRF7946PBF).

REEL DIMENSIONS

STANDARD OPTION(QTY 4800)

METRIC

IMPERIAL

CODE

MIN

MAX

N.C

13.2

N.C

18.4

14.4

15.4

MAX

N.C

A

B

C

D

E

F

12.992

0.795

0.504

0.059

3.937

N.C

330.0

20.2

12.8

1.5

N.C

0.520

N.C

100.0

N.C

0.724

0.567

0.606

G

H

0.488

0.469

12.4

11.9

DIMENSIONS

METRIC

IMPERIAL

NOTE: CONTROLLING

DIMENSIONS IN MM

CODE

MIN

7.90

3.90

MAX

0.319

0.161

0.484

0.219

0.209

0.264

N.C

MAX

8.10

4.10

0.311

0.154

0.469

0.215

0.201

0.256

0.059

A

B

C

D

E

F

11.90 12.30

5.45

5.10

6.50

1.50

5.55

5.30

6.70

N.C

1.60

G

H

0.063

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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November 25, 2014

IRF7946PbF

Qualification information^†

Consumer^††

Qualification level

(per JEDEC JESD47F^†††guidelines)

MS L 1

(per JEDEC J-STD-020D^†††

Moisture Sensitivity Level

RoHS compliant

DFET 1.5

)

Yes

Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/

Higher qualification ratings may be available should the user have such requirements. Please contact your

International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/

Applicable version of JEDEC standard at the time of product release.

Revision History

Date

Comment

•

Updated data sheet based on corporate template.

Updated Qual level from "MSL3" to "MSL1" on page12.

5/7/2014

• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #264).

•

Remove IRF7946TR1PBF quantity= 1000 from ordering table on page1.

Remove continuous drain current package limt=90A from Absolute Maximum table-on page2

Updated E_{AS (L =1mH)}= 200mJ on page 2

5/30/2014

11/25/2014

•

Ω

Updated note 10 “Limited by T_Jmax, starting T_J= 25°C, L = 1mH, R_G= 50 , I_AS= 20A, V_GS=10V”. on page 3

θJA

Updated R

from “60°C/W” to “45°C/W” on page 2

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visithttp://www.irf.com/whoto-call/

12

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November 25, 2014


型号：	IRF7946PBF
厂家：	Infineon
描述：	Brushed Motor drive applications
文件：	总12页 (文件大小：295K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRF7946PBF [INFINEON]

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