IRF8302MPBF [INFINEON]
Dual Sided Cooling Compatible;
| 型号： | IRF8302MPBF |
| 厂家： | 
Infineon |
| 描述： | Dual Sided Cooling Compatible |
| 文件： | 总9页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRF8302MPbF
l RoHs Compliant and Halogen-Free
l Integrated Monolithic Schottky Diode
l Low Profile (<0.7 mm)
HEXFET® Power MOSFET plus Schottky Diode
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
l Dual Sided Cooling Compatible
l Ultra Low Package Inductance
30V max ±20V max
1.4mΩ@ 10V 2.2mΩ@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Optimized for High Frequency Switching
l Ideal for CPU Core DC-DC Converters
35nC
8.9nC 5.1nC
40nC
29nC
1.8V
l Optimized for Sync. FET socket of Sync. Buck Converter
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques
l 100% Rg tested
DirectFET ISOMETRIC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MT
MP
MX
Description
The IRF8302MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET® package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF8302MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF8302MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Base Part number
Package Type
Standard Pack
Orderable Part Number
Form
Quantity
IRF8302MPbF
DirectFET MX
Tape and Reel
4800
IRF8302MTRPbF
Absolute Maximum Ratings
Max.
Parameter
Units
VDS
30
±20
31
Drain-to-Source Voltage
V
V
Gate-to-Source Voltage
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
25
@ TA = 70°C
@ TC = 25°C
A
190
250
260
25
DM
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
6
5
4
3
2
1
0
14.0
12.0
10.0
8.0
I
= 31A
I = 25A
D
D
V
V
V
= 24V
= 15V
= 6.0V
DS
DS
DS
T
= 125°C
J
6.0
4.0
T
= 25°C
2.0
J
0.0
0
2
4
6
8
10 12 14 16 18 20
0
10 20 30 40 50 60 70 80 90 100
Total Gate Charge (nC)
Q
G
V
Gate -to -Source Voltage (V)
GS,
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
Notes:
TC measured with thermocouple mounted to top (Drain) of part.
ꢀ Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.83mH, RG = 25Ω, IAS = 25A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
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February 17, 2014
1
IRF8302MPbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
Parameter
Min. Typ. Max. Units
VGS = 0V, ID = 1.0mA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.0
1.4
2.2
1.8
-4.2
–––
–––
–––
–––
–––
35
–––
V
Reference to 25°C, ID = 10mA
∆ΒVDSS/∆TJ
RDS(on)
––– mV/°C
V
GS = 10V, ID = 31A
1.8
2.7
m
Ω
VGS = 4.5V, ID = 25A
VDS = VGS, ID = 150µA
VGS(th)
Gate Threshold Voltage
2.35
V
V
DS = VGS, ID = 10mA
VDS = 24V, VGS = 0V
DS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
GS = -20V
V
/ T
∆
J
∆
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
GS(th)
IDSS
100
5.0
µA
mA
nA
V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
-100
–––
53
V
VDS = 15V, ID = 25A
gfs
Qg
S
VDS = 15V
VGS = 4.5V
ID = 25A
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
11
–––
–––
–––
–––
–––
–––
2.2
Qgs2
Qgd
5.1
8.9
10
nC
Qgodr
See Fig. 15
Qsw
14
V
DS = 16V, VGS = 0V
Qoss
RG
29
nC
Gate Resistance
1.3
22
Ω
VDD = 15V, VGS = 4.5V
ID = 25A
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
Rise Time
37
ns
RG = 1.8Ω
See Fig. 17
Turn-Off Delay Time
20
Fall Time
15
V
V
GS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 6030 –––
––– 1360 –––
DS = 15V
Output Capacitance
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
–––
560
–––
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
–––
–––
–––
–––
31
A
ISM
integral reverse
Pulsed Source Current
(Body Diode)
250
p-n junction diode.
TJ = 25°C, IS = 25A, VGS = 0V
TJ = 25°C, IF = 25A
di/dt = 300A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
30
0.80
45
V
ns
nC
Qrr
40
60
Notes:
Pulse width ≤ 400µs; duty cycle ≤ 2%.
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IRF8302MPbF
Absolute Maximum Ratings
Max.
2.8
Parameter
Units
W
Power Dissipation
Power Dissipation
Power Dissipation
P
P
P
@TA = 25°C
@TA = 70°C
@TC = 25°C
D
D
D
P
J
1.8
104
270
T
T
T
Peak Soldering Temperature
Operating Junction and
°C
-40 to + 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
45
Units
°C/W
W/°C
RθJA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
RθJA
–––
–––
1.2
RθJA
RθJC
–––
1.0
RθJ-PCB
Junction-to-PCB Mounted
Linear Derating Factor
–––
0.022
100
10
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
1
0.02
0.01
τ
τ
J τJ
τ
14.507
12.335077
0.1865935
1.9583548
0.0065404
AτA
τ
1 τ1
τ
τ
8.742
2 τ2
3 τ3
4 τ4
18.806
2.945
Ci= τi/Ri
Ci= τi/Ri
0.1
0.01
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
(At lower pulse widths ZthJA & ZTHJC are combined)
Notes:
R is measured at TJ of approximately 90°C.
Used double sided cooling , mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Mounted to a PCB with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
3
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IRF8302MPbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
BOTTOM
BOTTOM
1
2.5V
1
0.1
0.01
2.5V
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
1
0.1
1
10
100
0.1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 5. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
V
= 15V
I
= 31A
DS
D
≤
60µs PULSE WIDTH
V
V
= 10V
GS
GS
= 4.5V
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1
0.1
1
2
3
4
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 7. Normalized On-Resistance vs. Temperature
Fig 6. Typical Transfer Characteristics
10
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
T
= 25°C
J
C
C
C
+ C , C
SHORTED
ds
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
iss
gs
gd
= C
rss
oss
gd
= C + C
8
6
4
2
0
ds
gd
C
C
iss
oss
C
rss
100
0
50
100
150
200
1
10
, Drain-to-Source Voltage (V)
100
V
DS
I , Drain Current (A)
D
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
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IRF8302MPbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
100µsec
1msec
10msec
DC
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1
1
T
= 25°C
A
T = 150°C
J
V
= 0V
GS
Single Pulse
0.1
0
0.01 0.10
1.00
10.00
100.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
V
DS
SD
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
200
2.4
2.2
2.0
1.8
1.6
1.4
150
100
50
I
= 10mA
D
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
, Case Temperature (°C)
J
C
Fig 13. Typical Threshold Voltage vs. Junction
Fig 12. Maximum Drain Current vs. Case Temperature
Temperature
1200
I
D
TOP
1.3A
2.2A
1000
800
600
400
200
0
BOTTOM 25A
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14. Maximum Avalanche Energy vs. Drain Current
5
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February 17, 2014
IRF8302MPbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
V
R
D.U.T
AS
GS
G
V
DD
-
I
A
20V
t
0.01Ω
p
I
AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
RD
V
DS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
VGS
10%
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 17a. Switching Time Test Circuit
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Fig 17b. Switching Time Waveforms
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6
IRF8302MPbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
V***
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
DirectFET® Board Footprint, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G=GATE
D=DRAIN
S=SOURCE
D
D
D
D
S
S
G
7
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February 17, 2014
IRF8302MPbF
DirectFET® Outline Dimension, MX Outline
(Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes
all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC
IMPERIAL
CODE MIN MAX
MIN MAX
A
B
C
D
E
F
6.25 6.35 0.246 0.250
4.80 5.05 0.189 0.199
3.85 3.95 0.152 0.156
0.35 0.45 0.014 0.018
0.68 0.72 0.027 0.028
0.68 0.72 0.027 0.028
1.38 1.42 0.054 0.056
0.80 0.84 0.032 0.033
0.38 0.42 0.015 0.017
0.88 1.01 0.035 0.039
2.28 2.41 0.090 0.095
0.59 0.70 0.023 0.028
0.020 0.080 0.0008 0.0031
0.08 0.17 0.003 0.007
G
H
J
K
L
M
R
P
DirectFET® Part Marking
GATE MARKING
LOGO
PART NUMBER
BATCH NUMBER
DATE CODE
Line above the last character of
the date code indicates "Lead-Free"
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF8302MPbF
DirectFET® Tape & Reel Dimension (Showing component orientation).
LO A DE D TA PE FE ED D IR EC TIO N
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF8302MTRPBF). For 1000 parts on 7"
reel, order IRF8302MTR1PBF
REEL DIMENSIONS
STANDARD OPTION (QTY4800)
DIM E NS IO NS
M ETRIC
IM PE RIAL
NO TE : CO NTR O LLING
DIM ENS ION S IN M M
METRIC
IMPERIAL
CO DE
M IN
M IN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
M A X
8.10
4.10
12.30
5.55
5.30
6.70
N.C
M A X
0.319
0.161
0.484
0.219
0.209
0.264
N.C
CODE
MIN
MAX
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
MIN
MAX
N.C
N.C
0.520
N.C
N.C
0.724
0.567
0.606
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
A
B
C
D
E
F
330
20.2
12.8
1.5
100.0
N.C
12.992
0.795
0.504
0.059
3.937
N.C
G
H
G
H
12.4
11.9
0.488
0.469
1.60
0.063
Revision History
Date
Comments
Added the orgering information table, on page 1.
Updated data sheet with new IR corporate template.
•
•
2/17/2014
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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