IRF8304MPBF_技术文档

IRF8304MPbF

DirectFET^®Power MOSFET

Typical values (unless otherwise specified)

l RoHS Compliant and Halogen Free

l Low Profile (<0.7 mm)

V_DSS

30V max ±20V max

V_GS

R_DS(on)

l Dual Sided Cooling Compatible

l Ultra Low Package Inductance

1.7mΩ@ 10V 2.4mΩ@ 4.5V

l Optimized for High Frequency Switching

l Ideal for CPU Core DC-DC Converters

Q_{g tot}Q_gd

Q_gs2

Q_rr

Q_ossV_gs(th)

28nC

7.9nC 4.2nC

39nC

21nC

1.8V

l Optimized for both Sync.FET and some Control FET

application

l Low Conduction and Switching Losses

l Compatible with existing Surface Mount Techniques

l 100% Rg tested

DirectFET^®ISOMETRIC

MX

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

SQ

SX

ST

MQ

MT

MP

MX

Description

The IRF8304MPbF combines the latest HEXFET^®Power MOSFET Silicon technology with the advanced DirectFET^®packaging to achieve

the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET^®package is

compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection

soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET^®

package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF8304MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of

processors operating at higher frequencies. The IRF8304MPbF has been optimized for parameters that are critical in synchronous buck

operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.

Base Part number

Package Type

Standard Pack

Orderable Part Number

Form

Quantity

IRF8304MPbF

DirectFET MX

Tape and Reel

4800

IRF8304MTRPbF

Absolute Maximum Ratings

Max.

Parameter

Units

V_DS

30

±20

28

Drain-to-Source Voltage

V

Gate-to-Source Voltage

GS

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

I

@ T_A= 25°C

D

22

@ T_A= 70°C

@ T_C= 25°C

A

170

220

190

22

DM

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

mJ

A

6

5

4

3

2

1

0

14.0

12.0

10.0

8.0

I

= 28A

I = 22A

D

V

= 24V

= 15V

= 6.0V

DS

6.0

T

= 125°C

J

4.0

T

= 25°C

5

2.0

J

0.0

0

10

15

20

0

10

20

Q

30

40

50

60

70

80

Total Gate Charge (nC)

G

V

Gate -to -Source Voltage (V)

GS,

Fig 1. Typical On-Resistance vs. Gate Voltage

Notes:

Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage

T_Cmeasured with thermocouple mounted to top (Drain) of part.

ꢀ Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 0.75mH, R_G= 25Ω, I_AS= 22A.

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

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February 17, 2014

1

IRF8304MPbF

Static @ T_J= 25°C (unless otherwise specified)

Conditions

Parameter

Min. Typ. Max. Units

V_GS= 0V, I_D= 250µA

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

30

–––

V

Reference to 25°C, I = 1mA

∆ΒV_DSS/∆T_J

R_DS(on)

–––

1.35

–––

150

–––

22

––– mV/°C

D

V

_GS= 10V, I_D= 28A

1.7

2.4

1.8

-6.1

–––

28

2.2

3.2

m

Ω

V_GS= 4.5V, I_D= 22A

V_DS= V_GS, I_D= 100µA

V_GS(th)

Gate Threshold Voltage

2.35

V

/ T

∆

J

∆

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

––– mV/°C

GS(th)

V_DS= 24V, V_GS= 0V

I_DSS

1.0

150

100

-100

–––

42

µA

nA

S

V

_DS= 24V, V_GS= 0V, T_J= 125°C

V_GS= 20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

V_GS= -20V

V_DS= 15V, I_D= 22A

gfs

Q_g

V_DS= 15V

V_GS= 4.5V

I_D= 22A

Q_gs1

Pre-Vth Gate-to-Source Charge

Post-Vth Gate-to-Source Charge

Gate-to-Drain Charge

Gate Charge Overdrive

Switch Charge (Q_gs2+ Q_gd)

Output Charge

8.3

4.2

7.9

7.6

12.1

21

–––

2.2

Q_gs2

Q_gd

nC

Q_godr

See Fig. 15

Q_sw

V

_DS= 16V, V_GS= 0V

Q_oss

R_G

nC

Gate Resistance

1.3

16

Ω

V_DD= 15V, V_GS= 4.5V

I_D= 22A

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

–––

Rise Time

22

ns

R_G= 1.8Ω

See Fig. 17

Turn-Off Delay Time

19

Fall Time

13

V

_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

––– 4700 –––

_DS= 15V

Output Capacitance

–––

960

420

–––

pF

ƒ = 1.0MHz

Reverse Transfer Capacitance

Diode Characteristics

Conditions

Parameter

Min. Typ. Max. Units

I_S

MOSFET symbol

showing the

Continuous Source Current

(Body Diode)

–––

130

A

I_SM

integral reverse

Pulsed Source Current

(Body Diode)

–––

220

p-n junction diode.

T_J= 25°C, I_S= 22A, V_GS= 0V

T_J= 25°C, I_F= 22A

di/dt = 260A/µs

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

0.77

24

1.0

36

59

V

ns

nC

Q_rr

39

Notes:

Pulse width ≤ 400µs; duty cycle ≤ 2%.

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February 17, 2014

2

IRF8304MPbF

Absolute Maximum Ratings

Max.

2.8

Parameter

Units

W

P

@T_A= 25°C

@T_A= 70°C

@T_C= 25°C

Power Dissipation

D

P

J

1.8

100

270

Peak Soldering Temperature

Operating Junction and

°C

T

-40 to + 150

Storage Temperature Range

STG

Thermal Resistance

Parameter

Typ.

–––

12.5

20

Max.

45

Units

°C/W

W/°C

R_θJA

Junction-to-Ambient

R_θJA

Junction-to-Ambient

Junction-to-Case

–––

1.2

R_θJA

R_θJC

–––

1.0

R_θJ-PCB

Junction-to-PCB Mounted

Linear Derating Factor

–––

0.022

100

10

D = 0.50

0.20

0.10

0.05

1

0.02

0.01

R₁

R₂

R₃

R₄

Ri (°C/W) τi (sec)

R₄

τ

^Jτ_J

τ

1.3216

5.1963

21.489

17.005

0.000312

0.040534

1.0378

46

^Aτ_A

τ

¹τ₁

τ

²τ₂

³τ₃

⁴τ₄

0.1

Ci= τi/Ri

0.01

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + Tc

SINGLE PULSE

( THERMAL RESPONSE )

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

10

100

1000

t

, Rectangular Pulse Duration (sec)

1

Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Notes:

R is measured at T_Jof approximately 90°C.

Used double sided cooling , mounting pad with large heatsink.

Mounted on minimum footprint full size board with metalized

back and with small clip heatsink.

θ

Mounted on minimum

footprint full size board with

metalized back and with small

clip heatsink (still air)

Mounted to a PCB with

small clip heatsink (still air)

Surface mounted on 1 in. square Cu

(still air).

3

February 17, 2014

IRF8304MPbF

1000

100

10

1000

100

10

VGS

10V

VGS

TOP

10V

5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

2.3V

5.0V

4.5V

3.5V

3.0V

2.7V

2.5V

2.3V

BOTTOM

1

2.3V

1

2.3V

0.1

0.01

60µs PULSE WIDTH

Tj = 25°C

60µs PULSE WIDTH

≤

Tj = 150°C

1

0.1

1

10

100

0.1

10

100

V

, Drain-to-Source Voltage (V)

DS

V

, Drain-to-Source Voltage (V)

DS

Fig 4. Typical Output Characteristics

Fig 5. Typical Output Characteristics

1000

100

10

2.0

1.5

1.0

0.5

V

= 15V

I

= 28A

DS

D

≤

60µs PULSE WIDTH

V

= 10V

GS

= 4.5V

T

= 150°C

= 25°C

= -40°C

J

1

0.1

1.0

1.5

V

2.0

2.5

3.0

3.5

4.0

-60 -40 -20

0

20 40 60 80 100 120140 160

T

J

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

GS

Fig 7. Normalized On-Resistance vs. Temperature

Fig 6. Typical Transfer Characteristics

7

100000

10000

1000

V

= 0V,

= C

f = 1 MHZ

GS

T

= 25°C

Vgs = 3.5V

Vgs = 4.0V

Vgs = 4.5V

Vgs = 5.0V

Vgs = 8.0V

Vgs = 10V

J

C

+ C , C

SHORTED

ds

iss

gs

gd

= C

6

5

4

3

2

1

rss

oss

gd

= C + C

ds

gd

C

iss

C

oss

C

rss

100

0

50

100

150

200

1

10

, Drain-to-Source Voltage (V)

100

V

DS

I , Drain Current (A)

D

Fig 9. Typical On-Resistance vs.

Drain Current and Gate Voltage

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

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February 17, 2014

4

IRF8304MPbF

1000

100

10

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R (on)

DS

T

= 150°C

= 25°C

= -40°C

100µsec

J

1msec

10msec

1

DC

1

T

= 25°C

0.1

0.01

A

T = 150°C

J

V

= 0V

GS

Single Pulse

0

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

, Source-to-Drain Voltage (V)

0.01 0.10

1.00

10.00

100.00

V

, Drain-to-Source Voltage (V)

SD

DS

Fig 10. Typical Source-Drain Diode Forward Voltage

Fig11. Maximum Safe Operating Area

3.0

2.5

2.0

1.5

1.0

0.5

180

160

140

120

100

80

I

= 100µA

= 150µA

= 250µA

= 1.0mA

= 1.0A

D

60

40

20

0

-75 -50 -25

0

25 50 75 100 125 150

25

50

T

75

100

125

150

T

, Temperature ( °C )

J

, Case Temperature (°C)

C

Fig 13. Typical Threshold Voltage vs. Junction

Fig 12. Maximum Drain Current vs. Case Temperature

Temperature

800

700

600

500

400

300

200

100

0

I

D

TOP

2.1A

2.8A

BOTTOM 22A

25

50

75

100

125

150

Starting T , Junction Temperature (°C)

J

Fig 14. Maximum Avalanche Energy vs. Drain Current

5

February 17, 2014

IRF8304MPbF

Id

Vds

Vgs

L

VCC

DUT

0

Vgs(th)

20K

1K

Qgs1

Qgs2

Qgodr

Qgd

Fig 15a. Gate Charge Test Circuit

Fig 15b. Gate Charge Waveform

V

(BR)DSS

15V

t

p

DRIVER

+

L

V

DS

V

R

D.U.T

AS

GS

G

V

DD

-

I

A

20V

t

0.01Ω

p

I

AS

Fig 16b. Unclamped Inductive Waveforms

Fig 16a. Unclamped Inductive Test Circuit

R_D

V

DS

V_DS

90%

V_GS

D.U.T.

R_G

⁺V_DD

-

V_GS

10%

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

V

GS

t

r

t

f

d(on)

d(off)

Fig 17a. Switching Time Test Circuit

Fig 17b. Switching Time Waveforms

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6

IRF8304MPbF

Driver Gate Drive

P.W.

Period

D.U.T

Period

D =

+

_V***

=10V

GS

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

*

V_DD

**

Re-Applied

Voltage

• dv/dt controlled by R_G

R_G

+

-

Body Diode

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

I

SD

Ripple ≤ 5%

* Use P-Channel Driver for P-Channel Measurements

** Reverse Polarity for P-Channel

*** V_GS= 5V for Logic Level Devices

Fig 18. Diode Reverse Recovery Test Circuit for HEXFET^®Power MOSFETs

DirectFET Board Footprint, MX Outline

(Medium Size Can, X-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.

This includes all recommendations for stencil and substrate designs.

G = GATE

D = DRAIN

S = SOURCE

D

S

G

7

February 17, 2014

IRF8304MPbF

DirectFET^®Outline Dimension, MX Outline

(Medium Size Can, X-Designation).

Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes

all recommendations for stencil and substrate designs.

DIMENSIONS

METRIC

IMPERIAL

CODE MIN MAX

MIN

MAX

0.250

0.199

0.156

0.018

0.028

0.056

0.033

0.017

0.040

0.095

0.028

0.003

0.007

A

B

C

D

E

F

6.25 6.35 0.246

4.80 5.05 0.189

3.85 3.95 0.152

0.35 0.45 0.014

0.68 0.72 0.027

1.38 1.42 0.054

0.80 0.84 0.031

0.38 0.42 0.015

0.88 1.02 0.035

2.28 2.42 0.090

0.59 0.70 0.023

0.03 0.08 0.001

0.08 0.17 0.003

G

H

J

K

L

M

R

P

Dimensions are shown in

millimeters (inches)

DirectFET^®Part Marking

GATE MARKING

LOGO

PART NUMBER

BATCH NUMBER

DATE CODE

Line above the last character of

the date code indicates "Lead-Free"

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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February 17, 2014

8

IRF8304MPbF

DirectFET^®Tape & Reel Dimension (Showing component orientation).

LOADED TAPE FEED DIRECTION

NOTE: Controlling dimensions in mm

Std reel quantity is 4800 parts. (ordered as IRF8304MTRPBF). For 1000 parts on 7"

reel, order IRF8304MTR1PBF

DIMENSIONS

METRIC

REEL DIMENSIONS

STANDARD OPTION (QTY4800)

IMPERIAL

NOTE: CONTROLLING

DIMENSIONS IN MM

MIN

CODE

MIN

7.90

3.90

11.90

5.45

5.10

6.50

1.50

MAX

0.319

0.161

0.484

0.219

0.209

0.264

N.C

MAX

8.10

4.10

12.30

5.55

5.30

6.70

N.C

METRIC

IMPERIAL

A

B

C

D

E

F

0.311

0.154

0.469

0.215

0.201

0.256

0.059

CODE

MIN

MAX

N.C

13.2

N.C

18.4

14.4

15.4

MIN

MAX

N.C

0.520

N.C

0.724

0.567

0.606

A

B

C

D

E

F

330

20.2

12.8

1.5

100.0

N.C

12.992

0.795

0.504

0.059

3.937

N.C

G

H

0.063

1.60

G

H

12.4

11.9

0.488

0.469

Revision History

Date

Comments

Added the orgering information table, on page 1.

•

2/17/2014

Updated data sheet with new IR corporate template.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

9

February 17, 2014


型号：	IRF8304MPBF
厂家：	Infineon
描述：	Ultra Low Package Inductance
文件：	总9页 (文件大小：279K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRF8304MPBF [INFINEON]

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