IRF8714GPBF [INFINEON]
Control MOSFET of Sync-Buck Converters used for Notebook Processor Power;
| 型号： | IRF8714GPBF |
| 厂家： | 
Infineon |
| 描述： | Control MOSFET of Sync-Buck Converters used for Notebook Processor Power |
| 文件： | 总9页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96263
IRF8714GPbF
Applications
HEXFET® Power MOSFET
l
Control MOSFET of Sync-Buck
Converters used for Notebook
ProcessorPower
VDSS
30V
RDS(on) max
Qg
8.7m @VGS = 10V
8.1nC
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Benefits
l VeryLowGateCharge
l Very Low RDS(on) at 4.5V VGS
l Ultra-LowGateImpedance
l FullyCharacterizedAvalancheVoltage
and Current
A
A
D
1
2
3
4
8
S
S
S
G
7
D
6
D
5
D
l 20V VGS Max. Gate Rating
l 100% tested for Rg
l Lead-Free
SO-8
Top View
l Halogen-Free
Description
The IRF8714GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8714GPbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for Notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
30
Units
VDS
V
V
Gate-to-Source Voltage
± 20
14
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
11
A
110
2.5
1.6
DM
P
P
@TA = 25°C
@TA = 70°C
Power Dissipation
Power Dissipation
D
D
W
Linear Derating Factor
Operating Junction and
0.02
-55 to + 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
RθJL
RθJA
°C/W
–––
50
Notes through ꢀ are on page 9
www.irf.com
1
07/10/09
IRF8714GPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
BVDSS
∆Β
V
∆
V
DSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
7.1
8.7
13
VGS = 10V, ID = 14A
VGS = 4.5V, ID = 11A
VDS = VGS, ID = 25µA
mΩ
10.9
VGS(th)
Gate Threshold Voltage
1.35 1.80 2.35
V
∆
IDSS
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
71
-6.0
–––
–––
–––
–––
–––
8.1
1.9
1.0
3.0
2.2
4.0
4.8
1.6
10
––– mV/°C VDS = VGS, ID = 25µA
1.0
150
100
-100
–––
12
µA VDS = 24V, VGS = 0V
V
DS = 24V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
V
VGS = -20V
gfs
Qg
VDS = 15V, ID = 11A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
–––
–––
–––
–––
–––
–––
2.6
VDS = 15V
Qgs2
Qgd
nC VGS = 4.5V
ID = 11A
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
See Figs. 15 & 16
Qsw
Qoss
Rg
Output Charge
nC VDS = 16V, VGS = 0V
Gate Resistance
Turn-On Delay Time
Rise Time
Ω
td(on)
tr
td(off)
tf
–––
–––
–––
–––
VDD = 15V, VGS = 4.5V
9.9
11
ID = 11A
Turn-Off Delay Time
Fall Time
ns
pF
R = 1.8
Ω
G
5.0
See Fig. 18
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1020 –––
–––
–––
220
110
–––
–––
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
65
11
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
–––
–––
3.1
MOSFET symbol
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
ISM
–––
–––
110
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
14
1.0
21
23
V
T = 25°C, I = 11A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 11A, VDD = 15V
J F
Qrr
ton
di/dt = 300A/µs
15
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
www.irf.com
IRF8714GPbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
BOTTOM
BOTTOM
1
0.1
1
0.01
0.001
2.3V
1
2.3V
1
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
≤
≤
0.1
0.1
10
100
1000
0.1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.0
1.5
1.0
0.5
I
= 14A
D
V
= 10V
GS
100
10
1
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
≤
60µs PULSE WIDTH
0.1
1
2
3
4
5
6
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
vs. Temperature
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3
IRF8714GPbF
10000
5.0
4.0
3.0
2.0
1.0
0.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 11A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
V
V
= 24V
= 15V
rss
oss
gd
= C + C
DS
DS
ds
gd
C
iss
1000
100
10
C
oss
C
rss
1
10
, Drain-to-Source Voltage (V)
100
0
2
4
6
8
10
V
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100µsec
1msec
T
= 25°C
J
10msec
1
1
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
0
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF8714GPbF
14
12
10
8
2.5
2.0
1.5
1.0
I
= 25µA
D
6
4
2
0
25
50
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
T
, Ambient Temperature (°C)
T , Temperature ( °C )
A
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
AmbientTemperature
100
10
D = 0.50
0.20
0.10
0.05
0.02
1
SINGLE PULSE
( THERMAL RESPONSE )
0.01
0.1
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
τ
τ
J τJ
τ
1.9778
0.000165
AτA
τ
1 τ1
0.01
0.001
τ
τ
7.4731
0.022044
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
2 τ2
3 τ3
4 τ4
26.2617 0.82275
14.2991 28.4
Ci= τi/Ri
Ci= τi/Ri
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF8714GPbF
25
300
250
200
150
100
50
I
I
= 14A
D
D
TOP
0.82A
1.0A
20
15
10
BOTTOM 11A
T
= 125°C
J
T
= 25°C
J
5
0
3
4
5
6
7
8
9
10 11 12
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy
Fig 12. On-Resistance vs. Gate Voltage
vs. Drain Current
V
(BR)DSS
15V
t
p
L
VCC
DRIVER
+
L
V
DUT
DS
0
1
20K
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01Ω
t
p
I
AS
Fig 15. Gate Charge Test Circuit
Fig 14. Unclamped Inductive Test Circuit
and Waveform
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgodr
Qgd
Fig 16. Gate Charge Waveform
6
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IRF8714GPbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
-
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
V
DS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
VGS
10%
PulseWidth ≤ 1µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18a. Switching Time Test Circuit
Fig 18b. Switching Time Waveforms
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7
IRF8714GPbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com
IRF8714GPbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.1mH, RG = 25Ω, IAS = 11A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
ꢀ R is measured at TJ of approximately 90°C.
θ
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2009
www.irf.com
9
相关型号：
IRF8721GPBF
Power Field-Effect Transistor, 14A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8
INFINEON
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