IRF8734PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF8734PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总10页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96226
IRF8734PbF
HEXFET® Power MOSFET
Applications
l Synchronous MOSFET for Notebook
VDSS
30V
RDS(on) max
Qg (typ.)
20nC
3.5m @VGS = 10V
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
A
A
D
1
8
S
Benefits
2
7
S
D
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for RG
l Lead-Free
3
6
S
D
4
5
G
D
SO-8
Top View
Absolute Maximum Ratings
Max.
Parameter
Units
VDS
30
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
V
± 20
V
GS
21
I
I
I
@ TA = 25°C
D
D
17
A
@ TA = 70°C
168
DM
2.5
P
P
@TA = 25°C
@TA = 70°C
Power Dissipation
D
D
W
W/°C
°C
1.6
Power Dissipation
0.02
Linear Derating Factor
-55 to + 150
Operating Junction and
Storage Temperature Range
T
T
J
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
RθJL
RθJA
°C/W
–––
50
Notes through ꢀ are on page 10
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
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1
2/12/09
IRF8734PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30 ––– –––
BVDSS
V
Reference to 25°C, ID = 1mA
∆ΒVDSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient ––– 0.023 ––– V/°C
VGS = 10V, ID = 21A
–––
–––
2.9
4.2
3.5
5.1
Static Drain-to-Source On-Resistance
mΩ
VGS = 4.5V, ID = 17A
VGS(th)
∆VGS(th)
IDSS
Gate Threshold Voltage
1.35 1.80 2.35
V
VDS = VGS, ID = 50µA
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
85
-6.5
–––
–––
–––
–––
–––
20
––– mV/°C
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
1.0
µA
150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
VGS = -20V
-100
V
DS = 15V, ID = 17A
DS = 15V
gfs
–––
30
S
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
5.2
2.3
6.9
5.4
9.2
15
–––
–––
–––
–––
–––
–––
3.1
VGS = 4.5V
nC
ID = 17A
See Figs. 16a &16b
VDS = 16V, VGS = 0V
nC
Gate Resistance
1.7
13
Ω
VDD = 15V, VGS = 4.5V
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
ID = 17A
Rise Time
16
ns
pF
Ω
RG = 1.8
Turn-Off Delay Time
15
See Figs. 15a &15b
Fall Time
8.0
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 3175 –––
VDS = 15V
Output Capacitance
–––
–––
627
241
–––
–––
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Typ.
–––
–––
Max.
Parameter
Units
mJ
EAS
IAR
216
17
Single Pulse Avalanche Energy
Avalanche Current
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
–––
–––
3.1
A
ISM
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
168
VSD
trr
T = 25°C, I = 17A, V = 0V
J S GS
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
20
1.0
30
38
V
T = 25°C, I = 17A, VDD = 15V
ns
nC
J
F
Qrr
di/dt = 345A/µs
25
2
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IRF8734PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
BOTTOM
BOTTOM
1
0.1
1
2.3V
2.3V
60µs PULSE WIDTH
0.01
0.001
60µs PULSE WIDTH
Tj = 150°C
≤
≤
Tj = 25°C
10
, Drain-to-Source Voltage (V)
0.1
0.1
1
10
100
0.1
1
100
V
, Drain-to-Source Voltage (V)
V
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
1000
I
= 21A
D
V
= 10V
GS
1.6
1.4
1.2
1.0
0.8
0.6
100
10
1
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
≤
60µs PULSE WIDTH
0.1
-60 -40 -20
0
20 40 60 80 100 120140 160
1.5
2
2.5
3
3.5
4
4.5
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF8734PbF
100000
14.0
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I
= 17A
C
C
C
+ C , C
SHORTED
ds
D
iss
gs
gd
= C
rss
oss
gd
V
= 24V
= 15V
DS
= C + C
ds
gd
V
DS
10000
1000
100
C
iss
6.0
C
oss
4.0
C
rss
2.0
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
5
10 15 20 25 30 35 40 45 50 55
, Total Gate Charge (nC)
V
Q
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
100µsec
T
= 150°C
J
1msec
T
= 25°C
J
1
T
= 25°C
A
10msec
Tj = 150°C
V
= 0V
GS
Single Pulse
0.1
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF8734PbF
25
20
15
10
5
2.5
2.0
1.5
1.0
0.5
I
= 50µA
D
0
25
50
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
T
, Ambient Temperature (°C)
T , Temperature ( °C )
A
J
Fig 10. Threshold Voltage Vs. Temperature
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
D = 0.50
10
1
0.20
0.10
0.05
0.02
Ri (°C/W) τi (sec)
R1
R1
R2
R2
R3
R3
R4
R4
0.01
9.66830
0.169346
11.46293
1.815389
0.005835
τ
τa
J τJ
τ
τ 16.3087
0.1
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
20.7805
3.14828
0.01
0.001
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF8734PbF
20
15
10
5
1000
900
800
700
600
500
400
300
200
100
0
I
= 21A
I
D
D
TOP
1.26A
2.03A
BOTTOM 17A
T
= 125°C
J
T
= 25°C
J
0
2
4
6
8
10
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
V
Gate -to -Source Voltage (V)
J
GS,
Fig 12. On-Resistance Vs. Gate Voltage
Fig 13c. Maximum Avalanche Energy
Vs. Drain Current
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
I
AS
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
RD
V
DS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
6
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IRF8734PbF
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
20K
Qgs1
Qgs2
Qgodr
Qgd
Fig 16b. Gate Charge Waveform
Fig 16a. Gate Charge Test Circuit
Driver Gate Drive
P.W.
Period
D =
D.U.T
Period
P.W.
+
V***
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
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7
IRF8734PbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF8734PbF
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
IRF8734PbF
Orderable part number
Package Type
Standard Pack
Note
Form
Tube/Bulk
Quantity
95
IRF8734PbF
IRF8734TRPbF
SO-8
SO-8
Tape and Reel
4000
Qualification Information†
Consumer ††
Qualification level
(per JEDEC JESD47F††† guidelines)
MSL1
Moisture Sensitivity Level
RoHS Compliant
SO-8
(per JEDEC J-STD-020D†††
)
Yes
†
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 1.69mH
RG = 25Ω, IAS = 16A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
ꢀ R is measured at TJ of approximately 90°C.
θ
Data and specifications subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/2009
10
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相关型号：
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INFINEON
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