IRF8721 [INFINEON]
30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装;
| 型号： | IRF8721 |
| 厂家： | 
Infineon |
| 描述： | 30V 单个 N 通道 HEXFET Power MOSFET, 采用 SO-8 封装 |
| 文件： | 总10页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97119
IRF8721PbF
HEXFET® Power MOSFET
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook Processor
Power
VDSS
30V
RDS(on) max
Qg
8.3nC
8.5m @V = 10V
:
GS
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
Benefits
A
A
1
8
S
D
l Very Low Gate Charge
2
7
S
D
l Low RDS(on) at 4.5V VGS
3
6
S
D
l Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l Lead-Free
4
5
G
D
SO-8
Top View
Description
The IRF8721PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721PbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency
DC-DC converters that power the latest generation of processors for Notebook and Netcom
applications.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
30
Units
V
VDS
V
Gate-to-Source Voltage
± 20
14
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
11
A
110
2.5
1.6
DM
P
P
@TA = 25°C
@TA = 70°C
Power Dissipation
Power Dissipation
W
D
D
Linear Derating Factor
Operating Junction and
0.02
-55 to + 150
W/°C
°C
T
T
J
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
°C/W
Rθ
Rθ
JL
–––
50
JA
Notes through ꢀ are on page 9
www.irf.com
1
07/30/07
IRF8721PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250μA
BVDSS
V
ΔΒVDSS/ΔTJ
RDS(on)
Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
–––
–––
1.35
–––
–––
–––
–––
–––
27
6.9
8.5
mΩ VGS = 10V, ID = 14A
10.6 12.5
VGS = 4.5V, ID = 11A
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
–––
-6.2
–––
–––
–––
2.35
V
V
DS = VGS, ID = 25μA
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
1.0
150
100
μA
nA
S
V
V
V
DS = 24V, VGS = 0V
DS = 24V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
––– -100
VGS = -20V
gfs
–––
8.3
2.0
1.0
3.2
2.0
4.2
5.0
1.8
8.2
11
–––
12
VDS = 15V, ID = 11A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
VDS = 15V
nC VGS = 4.5V
ID = 11A
See Fig. 16a and 16b
nC
V
V
DS = 16V, VGS = 0V
Gate Resistance
Ω
3.0
–––
–––
–––
–––
td(on)
tr
td(off)
tf
Turn-On Delay Time
DD = 15V, VGS = 4.5V
Rise Time
ID = 11A
RG = 1.8Ω
Turn-Off Delay Time
8.1
7.0
ns
Fall Time
See Fig. 15a
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 1040 –––
Output Capacitance
–––
–––
229
114
–––
–––
pF VDS = 15V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
Max.
Units
mJ
EAS
IAR
68
11
Avalanche Current
A
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
–––
–––
3.1
(Body Diode)
A
showing the
G
ISM
Pulsed Source Current
–––
–––
112
integral reverse
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
–––
14
1.0
21
23
V
T = 25°C, I = 11A, V = 0V
J S GS
ns T = 25°C, I = 11A, VDD = 15V
J
F
Qrr
ton
2
Reverse Recovery Charge
Forward Turn-On Time
15
nC di/dt = 300A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
IRF8721PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
BOTTOM
BOTTOM
1
0.1
0.01
2.3V
1
≤ 60μs PULSE WIDTH
≤ 60μs PULSE WIDTH
2.3V
Tj = 150°C
Tj = 25°C
1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
I
= 14A
V
= 15V
D
DS
≤ 60μs PULSE WIDTH
V
= 10V
GS
T
= 25°C
J
T
= 150°C
J
1
0.1
0.01
1.0
2.0
3.0
4.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRF8721PbF
16
12
8
10000
V
C
= 0V,
f = 1 MHZ
I
= 11A
GS
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 24V
DS
VDS= 15V
C
= C
rss
gd
C
= C + C
oss
ds
gd
1000
Ciss
Coss
Crss
4
0
100
0
5
10
15
20
25
1
10
100
Q , Total Gate Charge (nC)
g
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
100μsec
T
= 150°C
J
1msec
10msec
T
= 25°C
1
J
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.2
0.4
0.6
0.8
1.0
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF8721PbF
16
12
8
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
I
= 25μA
D
4
0
25
50
75
100
125
150
-75 -50 -25
0
25
50
75 100 125 150
T , Ambient Temperature (°C)
T , Temperature ( °C )
A
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Case Temperature
100
10
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
τι (sec)
1.935595 0.000148
7.021545 0.019345
26.61013 0.81305
Ri (°C/W)
0.02
0.01
1
τJ
τa
τJ
τ1
τ
τ
3τ3
τ4
2τ2
τ1
τ4
Ci= τi/Ri
14.43961
26.2
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF8721PbF
16
14
12
10
8
300
250
200
150
100
50
I
= 14A
D
I
D
TOP
0.83A
1.05A
11A
BOTTOM
T
= 125°C
J
T
= 25°C
8.0
J
6
0
2.0
4.0
6.0
10.0
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
t
0.01
Ω
p
I
AS
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
6
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IRF8721PbF
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2μF
.3μF
12V
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Current Sampling Resistors
Qgs1
Qgs2
Qgodr
Qgd
Fig 16b. Gate Charge Waveform
Fig 16a. Gate Charge Test Circuit
Driver Gate Drive
P.W.
Period
D =
D.U.T
Period
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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7
IRF8721PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES
MIL LIME T E RS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
D
E
.013
8
1
7
2
6
3
5
4
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
e
.050 B AS IC
1.27 B AS IC
e 1 .025 B AS IC
0.635 B AS IC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
FOOTPRINT
8X 0.72 [.028]
NOTES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT LINE CONF ORMS T O JE DE C OUT L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW= WEEK
A= ASSEMBLY SITE CODE
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com
IRF8721PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.09mH, RG = 25Ω, IAS = 11A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
ꢀ R is measured at TJ of approximately 90°C.
θ
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2007
www.irf.com
9
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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