IRF8721GPBF [INFINEON]
Power Field-Effect Transistor, 14A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8;
| 型号： | IRF8721GPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 14A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96262
IRF8721GPbF
HEXFET® Power MOSFET
Applications
l Control MOSFET of Sync-Buck
Converters used for Notebook Processor
Power
l Control MOSFET for Isolated DC-DC
Converters in Networking Systems
VDSS
30V
RDS(on) max
Qg
8.3nC
8.5m @V = 10V
GS
A
A
D
Benefits
1
8
S
l Very Low Gate Charge
l Low RDS(on) at 4.5V VGS
l Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
2
7
S
D
3
6
S
D
4
5
G
D
SO-8
Top View
l 20V VGS Max. Gate Rating
l Lead-Free
l Halogen-Free
Description
The IRF8721GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package The IRF8721GPbF has been optimized for parameters that are
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for Notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
30
Units
VDS
V
V
Gate-to-Source Voltage
± 20
14
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
11
A
110
2.5
1.6
DM
P
P
@TA = 25°C
@TA = 70°C
Power Dissipation
Power Dissipation
D
D
W
Linear Derating Factor
Operating Junction and
0.02
-55 to + 150
W/°C
°C
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
RθJL
RθJA
°C/W
–––
50
Notes through ꢀ are on page 9
www.irf.com
1
07/10/09
IRF8721GPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
BVDSS
∆Β
V
∆
V
DSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
1.35
–––
–––
–––
–––
–––
27
6.9
10.6 12.5
2.35
8.5
mΩ
VGS = 10V, ID = 14A
VGS = 4.5V, ID = 11A
VDS = VGS, ID = 25µA
VGS(th)
Gate Threshold Voltage
–––
-6.2
–––
–––
–––
–––
–––
8.3
2.0
1.0
3.2
2.0
4.2
5.0
1.8
8.2
11
V
∆
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
IDSS
1.0
150
100
-100
–––
12
µA VDS = 24V, VGS = 0V
V
DS = 24V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
V
VGS = -20V
VDS = 15V, ID = 11A
gfs
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
3.0
VDS = 15V
nC VGS = 4.5V
D = 11A
See Fig. 16a and 16b
Qgs2
Qgd
I
Qgodr
Qsw
Qoss
RG
nC
VDS = 16V, VGS = 0V
Gate Resistance
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
VDD = 15V, VGS = 4.5V
Rise Time
ID = 11A
Ω
RG = 1.8
Turn-Off Delay Time
8.1
7.0
ns
pF
Fall Time
See Fig. 15a
Ciss
Coss
Crss
Input Capacitance
––– 1040 –––
VGS = 0V
Output Capacitance
–––
–––
229
114
–––
–––
VDS = 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
Units
mJ
EAS
IAR
68
11
A
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
–––
–––
3.1
(Body Diode)
A
showing the
G
ISM
Pulsed Source Current
–––
–––
112
integral reverse
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
14
1.0
21
23
V
T = 25°C, I = 11A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 11A, VDD = 15V
J F
Qrr
ton
2
15
nC di/dt = 300A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
IRF8721GPbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
BOTTOM
BOTTOM
1
0.1
0.01
2.3V
1
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
2.3V
1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
I
= 14A
V
= 15V
DS
60µs PULSE WIDTH
D
V
= 10V
≤
GS
T
= 25°C
J
T
= 150°C
J
1
0.1
0.01
1.0
2.0
3.0
4.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRF8721GPbF
16
12
8
10000
V
C
= 0V,
f = 1 MHZ
I = 11A
GS
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 24V
DS
VDS= 15V
C
= C
rss
gd
C
= C + C
ds
oss
gd
1000
Ciss
Coss
Crss
4
0
100
0
5
10
15
20
25
1
10
100
Q , Total Gate Charge (nC)
g
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
100µsec
1msec
T
= 150°C
J
10msec
T
= 25°C
1
J
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.2
0.4
0.6
0.8
1.0
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF8721GPbF
16
12
8
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
I
= 25µA
D
4
0
25
50
75
100
125
150
-75 -50 -25
0
25
50
75 100 125 150
T , Ambient Temperature (°C)
T , Temperature ( °C )
A
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Case Temperature
100
10
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
τι (sec)
1.935595 0.000148
7.021545 0.019345
26.61013 0.81305
Ri (°C/W)
0.02
0.01
1
τJ
τa
τJ
τ1
τ
τ
3τ3
τ4
2 τ2
τ1
τ4
Ci= τi/Ri
14.43961
26.2
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF8721GPbF
16
14
12
300
250
200
150
100
50
I
= 14A
D
I
D
TOP
0.83A
1.05A
11A
BOTTOM
T
J
= 125°C
10
8
T
J
= 25°C
8.0
6
0
2.0
4.0
6.0
10.0
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 13. Maximum Avalanche Energy
Fig 12. On-Resistance vs. Gate Voltage
vs. Drain Current
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
Ω
0.01
t
p
I
AS
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
6
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IRF8721GPbF
Id
Current Regulator
Vds
Same Type as D.U.T.
Vgs
50KΩ
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Current Sampling Resistors
Qgs1
Qgs2
Qgodr
Qgd
Fig 16b. Gate Charge Waveform
Fig 16a. Gate Charge Test Circuit
Driver Gate Drive
P.W.
Period
D =
D.U.T
Period
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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7
IRF8721GPbF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRF8721GPbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.09mH, RG = 25Ω, IAS = 11A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
ꢀ R is measured at TJ of approximately 90°C.
θ
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2009
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9
相关型号：
IRF8736TRPBF-1
Small Signal Field-Effect Transistor, 18A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8
INFINEON
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