IRF9335PBF [INFINEON]

HEXFET Power MOSFET; HEXFET功率MOSFET


型号：	IRF9335PBF
厂家：	Infineon
描述：	HEXFET Power MOSFET HEXFET功率MOSFET
文件：	总8页 (文件大小：265K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD - 96311A

IRF9335PbF

HEXFET^®Power MOSFET

V_DS

-30

R_{DS(on) max}

(@V_GS= -10V)

Ω

R_{DS(on) max}

(@V_GS= -4.5V)

110

9.1

Ω

Q_{g (typical)}

SO-8

I_D

-5.4

(@T_A= 25°C)

Applications

• Charge and Discharge Switch for Notebook PC Battery Application

• System/Load Switch

Features and Benefits

Features

Resulting Benefits

results in

Industry-Standard SO-8 Package

Multi-Vendor Compatibility

RoHS Compliant Containing no Lead, no Bromide and no Halogen

Environmentally Friendlier

⇒

Orderable part number

Package Type

Standard Pack

Form Quantity

Note

IRF9335PbF

IRF9335TRPbF

SO8

Tube/Bulk

Tape and Reel

4000

Absolute Maximum Ratings

Max.

Parameter

Drain-to-Source Voltage

Units

V_DS

-30

±20

-5.4

-4.3

-43

2.5

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

@T_A= 25°C

@T_A= 70°C

Power Dissipation

W/°C

°C

1.6

0.02

Power Dissipation

Linear Derating Factor

Operating Junction and

-55 to + 150

Storage Temperature Range

STG

Notes through are on page 2

www.irf.com

06/17/10

IRF9335PbF

Static @ T_J= 25°C (unless otherwise specified)

Conditions

V_GS= 0V, I_D= -250µA

Parameter

Drain-to-Source Breakdown Voltage

Min.

Typ.

–––

0.019

Max.

–––

Units

BV_DSS

∆Β

R_DS(on)

-30

–––

-1.3

–––

5.4

Reference to 25°C, I_D= -1mA

∆

V_DSS/ T_J

Breakdown Voltage Temp. Coefficient

V/°C

V_GS= -10V, I_D= -5.4A

Static Drain-to-Source On-Resistance

Ω

V_GS= -4.5V, I_D= -4.3A

110

-2.4

–––

-1.0

-150

-100

100

–––

V_GS(th)

∆V_GS(th)

I_DSS

Gate Threshold Voltage

-1.8

-5.1

–––

4.7

9.1

1.3

2.6

V_DS= V_GS, I_D= -10µA

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

mV/°C

V_DS= -24V, V_GS= 0V

µA

V_DS= -24V, V_GS= 0V, T_J= 125°C

_GS= -20V

_GS= 20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

V_DS= -10V, I_D= -4.3A

gfs

Q_g

V_DS= -15V,V_GS= -4.5V,I_D= - 4.3A

–––

V_GS= -10V

Q_g

Total Gate Charge

V_DS= -15V

I_D= -4.3A

Q_gs

Q_gd

R_G

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain Charge

Gate Resistance

–––

Ω

V_DD= -15V, V_GS= -4.5V

Turn-On Delay Time

Rise Time

9.7

I_D= -1.0A

Ω

R_G= 6.8

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

See Figs. 19a & 19b

V_GS= 0V

C_iss

C_oss

C_rss

Input Capacitance

386

V_DS= -25V

Output Capacitance

Reverse Transfer Capacitance

ƒ = 1.0KHz

Avalanche Characteristics

Typ.

–––

Max.

Parameter

Units

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

-4.3

Diode Characteristics

Conditions

Parameter

Min.

Typ.

Max.

Units

I_S

MOSFET symbol

showing the

Continuous Source Current

(Body Diode)

–––

-2.5

I_SM

integral reverse

p-n junction diode.

Pulsed Source Current

(Body Diode)

–––

-43

V_SD

t_rr

T = 25°C, I = -2.5A, V = 0V

J S GS

Diode Forward Voltage

–––

-1.2

T = 25°C, I = -2.5A, V_DD= -24V

Reverse Recovery Time

Reverse Recovery Charge

Q_rr

di/dt = 100/µs

7.4

Thermal Resistance

Typ.

–––

Max.

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Units

R_θJL

R_θJA

°C/W

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 10.6mH, R_G= 50Ω, I_AS= -4.3A.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

When mounted on 1 inch square copper board.

ꢀ R_θis measured at T_Jof approximately 90°C.

For DESIGN AID ONLY, not subject to production testing.

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IRF9335PbF

100

VGS

-10V

VGS

-10V

TOP

-5.0V

-4.5V

-4.0V

-3.5V

-3.0V

-2.8V

-2.5V

-5.0V

-4.5V

-4.0V

-3.5V

-3.0V

-2.8V

-2.5V

BOTTOM

0.1

0.01

-2.5V

≤60µs PULSE WIDTH Tj = 25°C

-2.5V

≤60µs PULSE WIDTH Tj = 150°C

0.1

100

0.1

100

-V , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

100

1.6

1.4

1.1

0.8

0.6

= -10V

= -5.4A

= -10V

≤

60µs PULSE WIDTH

= 150°C

= 25°C

0.1

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

-60 -40 -20

20 40 60 80 100 120140 160

, Junction Temperature (°C)

-V , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

10000

1000

100

= 0V,

= C

f = 1 KHZ

= -4.3A

+ C , C

SHORTED

iss

= C

rss

oss

= -24V

= -15V

= C + C

VDS= -6V

iss

oss

rss

-V , Drain-to-Source Voltage (V)

100

, Total Gate Charge (nC)

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

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IRF9335PbF

100

OPERATION IN THIS AREA LIMITED BY R

100µsec

(on)

= 150°C

1msec

10msec

= 25°C

Tj = 150°C

= 0V

Single Pulse

0.1

0.3 0.4 0.5 0.6 0.7 0.8 0.9

1.1 1.2

100

-V , Source-to-Drain Voltage (V)

-V , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

5.4

4.8

4.2

3.6

2.3

2.1

1.9

1.7

1.5

1.3

1.1

0.9

0.7

2.4

1.8

1.2

0.6

= -10uA

100

125

150

-75 -50 -25

25 50 75 100 125 150

, Ambient Temperature (°C)

T , Temperature ( °C )

Fig 10. Threshold Voltage vs. Temperature

Fig 9. Maximum Drain Current vs.

AmbientTemperature

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.1

0.01

0.001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + T

SINGLE PULSE

( THERMAL RESPONSE )

1E-006

1E-005

0.0001

0.001

0.01

0.1

100

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF9335PbF

160

140

120

100

400

300

200

100

= -5.4A

Vgs = -4.5V

= 125°C

Vgs = -10V

= 25°C

10 12 14 16 18 20

-I , Drain Current (A)

-V

Gate -to -Source Voltage (V)

GS,

Fig 13. Typical On-Resistance vs. Drain Current

Fig 12. On-Resistance vs. Gate Voltage

450

1000

400

TOP

-1.5A

-2.3A

BOTTOM -4.3A

800

600

400

200

350

300

250

200

150

100

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

100

125

150

Time (sec)

Starting T , Junction Temperature (°C)

Fig 14. Maximum Avalanche Energy vs. Drain Current

Fig 15. Typical Power vs. Time

Driver Gate Drive

P.W.

Period

D =

D.U.T *

P.W.

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

• di/dt controlled by R_G

Re-Applied

Voltage

R_G

• Driver same type as D.U.T.

Body Diode

Inductor Current

Forward Drop

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple

≤ 5%

* V_GS= 5V for Logic Level Devices

* Reverse Polarity of D.U.T for P-Channel

Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET^®Power MOSFETs

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IRF9335PbF

Vds

Vgs

VCC

DUT

Vgs(th)

20K

Qgs1

Qgs2

Qgodr

Qgd

Fig 17a. Gate Charge Test Circuit

Fig 17b. Gate Charge Waveform

D.U.T

-V_GS

DRIVER

-20V

0.01

Ω

(BR)DSS

15V

Fig 18b. Unclamped Inductive Waveforms

Fig 18a. Unclamped Inductive Test Circuit

R_D

V_DS

d(on)

d(off)

V_GS

D.U.T.

10%

R_G

V_DD

-V_GS

90%

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 19a. Switching Time Test Circuit

Fig 19b. Switching Time Waveforms

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IRF9335PbF

SO-8 Package Outline(Mosfet & Fetky)

Dimensions are shown in milimeters (inches)

INCHES

MIN MAX

.0532 .0688

MILLIME T E RS

DIM

MIN

1.35

0.10

0.33

0.19

4.80

3.80

MAX

1.75

0.25

0.51

0.25

5.00

4.00

A1 .0040 .0098

.013

.0075 .0098

.189 .1968

.020

0.25 [.010]

.1497 .1574

.050 BASIC

1.27 BASIC

e 1 .025 BASIC

0.635 BASIC

.2284 .2440

.0099 .0196

5.80

0.25

0.40

0°

6.20

0.50

1.27

8°

.016

0°

.050

8°

K x 45°

0.10 [.004]

8X c

C A B

8X L

8X b

0.25 [.010]

FOOTPRINT

8X 0.72 [.028]

NOTES:

1. DIMENSIONING & TOLERANCINGPER ASME Y14.5M-1994.

2. CONTROLLINGDIMENSION: MILLIMETER

3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].

4. OUTLINE CONFORMS TOJEDECOUTLINE MS-012AA.

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].

6.46 [.255]

DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.

MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].

DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO

ASUBSTRATE.

3X 1.27 [.050]

8X 1.78 [.070]

SO-8 Part Marking Information

EXAMPLE: THIS IS AN IRF7101 (MOSFET)

DAT E CODE (YWW)

P = DISGNATES LEAD - FREE

PRODUCT (OPTIONAL)

Y = LAST DIGIT OF THE YEAR

WW = WEE K

A = AS S E MB L Y S IT E CODE

XXXX

F7101

INTERNATIONAL

LOT CODE

RECTIFIER

LOGO

PART NUMBER

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com

IRF9335PbF

SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Qualification Information^†

Consumer ^††

Qualification level

(per JEDEC JESD47F^†††guidelines)

MSL1

(per JEDEC J-STD-020D^†††

Moisture Sensitivity Level

RoHS Compliant

SO-8

)

Yes

Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

Higher qualification ratings may be available should the user have such requirements.

Please contact your International Rectifier sales representative for further information:

http://www.irf.com/whoto-call/salesrep/

Applicable version of JEDEC standard at the time of product release.

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.06/2010

www.irf.com

IRF9335PBF [INFINEON]

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