IRFH4213TRPBF [INFINEON]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | IRFH4213TRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总9页 (文件大小：505K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FastIRFET™
IRFH4213PbF
HEXFET® Power MOSFET
VDSS
25
V
RDS(on) max
(@ VGS = 10V)
1.35
m
(@ VGS = 4.5V)
1.90
26
Qg (typical)
nC
A
ID
204
(@TC (Bottom) = 25°C)
PQFN 5X6 mm
Applications
Synchronous Rectifier MOSFET for Synchronous Buck Converters
Secondary Synchronous Rectifier MOSFET for isolated DC-DC converters
Active ORing and Hot Swap
Battery Operated DC Motor Inverters
Features
Benefits
Low RDSon (<1.35m)
Low Thermal Resistance to PCB (<1.4°C/W)
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Low Profile (<0.9 mm)
results in
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Environmentally Friendlier
Increased Reliability
Standard Pack
Base part number
Package Type
Orderable Part Number
Form
Quantity
IRFH4213PbF
PQFN 5mm x 6 mm
Tape and Reel
4000
IRFH4213TRPbF
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Max.
± 20
41
Units
VGS
V
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
204
129
400
A
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Power Dissipation
3.6
W
Power Dissipation
89
Linear Derating Factor
0.029
W/°C
TJ
Operating Junction and
-55 to + 150
°C
TSTG
Storage Temperature Range
Notes through are on page 9
1
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IRFH4213PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
25
–––
–––
–––
1.1
Typ.
–––
21
1.10
1.50
1.6
Max. Units
–––
––– mV/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
BVDSS
BVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
1.35
1.90
2.1
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
m
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
V
DS = VGS, ID = 100µA
–––
–––
-5.8
–––
––– mV/°C
1.0
100
-100
–––
–––
39
µA VDS = 20V, VGS = 0V
IGSS
–––
–––
228
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
54
VGS = 20V
nA
VGS = -20V
gfs
Qg
S
V
DS = 10V, ID = 50A
nC VGS = 10V, VDS = 13V, ID = 50A
Qg
Total Gate Charge
26
V
V
DS = 13V
GS = 4.5V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
7.3
3.4
9.2
6.1
12.6
25
1.5
14
35
17
12
3420
940
240
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ID = 50A
nC VDS = 16V, VGS = 0V
Gate Resistance
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDD = 13V, VGS = 4.5V
ns ID = 50A
RG=2.0
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
pF
VDS = 13V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
134
50
EAS
IAR
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
IS
Continuous Source Current
(Body Diode)
–––
–––
204
A
400
G
ISM
Pulsed Source Current
(Body Diode)
–––
–––
S
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
23
37
1.0
35
56
V
TJ = 25°C, IS = 50A, VGS = 0V
ns TJ = 25°C, IF = 50A, VDD = 13V
nC
di/dt = 360A/µs
Thermal Resistance
Parameter
Typ.
Max.
Units
Junction-to-Case
–––
–––
–––
–––
1.4
RJC (Bottom)
RJC (Top)
RJA
°C/W
Junction-to-Case
21
35
21
Junction-to-Ambient
Junction-to-Ambient
RJA (<10s)
2
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IRFH4213PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.3V
2.8V
2.5V
5.0V
4.5V
4.0V
3.5V
3.3V
2.8V
2.5V
BOTTOM
BOTTOM
2.5V
1
2.5V
1
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 150°C
1
0.1
0.1
1
10
100
0.1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 50A
D
V
= 10V
GS
T = 150°C
J
T = 25°C
J
1
V
= 15V
DS
60µs PULSE WIDTH
0.1
1.5
2.0
V
2.5
3.0
3.5
4.0
4.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
GS
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
f = 1 MHZ
GS
I = 50A
D
C
C
C
= C + C , C SHORTED
iss
gs
gd
ds
12.0
= C
rss
oss
gd
= C + C
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
V
V
= 20V
= 13V
DS
DS
C
iss
C
oss
C
rss
100
1
10
, Drain-to-Source Voltage (V)
100
0
10
20
Q , Total Gate Charge (nC)
G
30
40
50
60
70
V
DS
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
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IRFH4213PbF
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
T = 150°C
J
T = 25°C
Limited by Package
J
1msec
1
DC
10
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
V
= 0V
GS
0.01
0.1
0.1
1
100
0.2
0.4
0.6
0.8
1.0
1.2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
2.8
250
Limited by package
2.4
2.0
1.6
200
150
100
50
I
= 100µA
= 250µA
= 1.0mA
= 1A
D
I
D
1.2
0.8
I
D
I
D
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T , Temperature ( °C )
T
, Case Temperature (°C)
J
C
Fig 10. Threshold Voltage Vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFH4213PbF
4.5
3.5
2.5
1.5
0.5
600
500
400
300
200
100
0
I
I
= 50A
D
D
TOP
11A
25A
BOTTOM 50A
T = 125°C
J
T = 25°C
J
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On– Resistance vs. Gate Voltage
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulsewidth
5
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IRFH4213PbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
I
p
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 19. Gate Charge Waveform
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Fig 18. Gate Charge Test Circuit
6
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IRFH4213PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
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IRFH4213PbF
PQFN 5x6 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
DESCRIPTION
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
Bo
Ko
W
P
1
Pitch between successive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimension are nominal
Package
Type
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
Ao
Bo
Ko
P1
W
Pin 1
(mm)
(mm)
(mm)
(mm)
(mm)
Quadrant
(mm)
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFH4213PbF
Qualifiction Information†
Qualification Level
Industrial†
(per JEDEC JESD47F†† guidelines)
MSL1
PQFN 5mm x 6mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.107mH, RG = 50, IAS = 50A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by
production test capability.
Revision History
Date
Comments
Updated package 3D drawing, on page 1.
5/13/2013
Updated current rating based on max rating not limited by package, on pages 1 and 2.
Added "FastIRFET™" above part number on page1
08/07/2013
03/11/2015
Updated package outline and tape and reel on pages 7 and 8.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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March 11, 2015
相关型号：
IRFH4251DTRPBF
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INFINEON
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