IRFH5106TRPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFH5106TRPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95959
IRFH5106PbF
HEXFET® Power MOSFET
VDS
60
V
RDS(on) max
(@VGS = 10V)
Qg (typical)
5.6
m
Ω
50
nC
RG (typical)
1.4
Ω
ID
100
A
PQFN 5X6 mm
(@Tc(Bottom) = 25°C)
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
• Boost Converters
Features and Benefits
Features
Benefits
Low RDSon (≤ 5.6mΩ)
Low Thermal Resistance to PCB (≤ 0.5°C/W)
100% Rg tested
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
Low Profile (≤ 0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
Standard Pack
Note
Form
Tape and Reel
Tape and Reel
Quantity
4000
1000
IRFH5106TRPBF
IRFH5106TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
60
Units
VDS
V
VGS
±20
21
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
17
100
63
A
400
3.6
114
Power Dissipation
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
W
W/°C
°C
Power Dissipation
Linear Derating Factor
0.029
-55 to + 150
TJ
Operating Junction and
Storage Temperature Range
TSTG
Notes through are on page 8
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1
03/12/10
IRFH5106PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
60 ––– –––
––– 0.05 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
V
∆Β
/ T
∆
J
DSS
RDS(on)
––– 4.65
5.6
4.0
VGS = 10V, ID = 50A
mΩ
V
VGS(th)
2.0
–––
–––
–––
–––
–––
82
–––
-8.5
–––
–––
–––
VDS = VGS, ID = 250µA
V
∆
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
GS(th)
IDSS
20
µA
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
VGS = 20V
250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
––– -100
VGS = -20V
gfs
Qg
–––
50
–––
75
S
VDS = 25V, ID = 50A
–––
–––
–––
–––
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
8.2
3.9
17
–––
–––
–––
V
DS = 30V
GS = 10V
Qgs2
Qgd
V
nC
ID = 50A
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
––– 20.9 –––
––– 20.9 –––
See Fig.17 & 18
Qsw
Qoss
Output Charge
–––
17
–––
nC
V
DS = 16V, VGS = 0V
DD = 60V, VGS = 10V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
1.4
8.1
13
–––
–––
–––
–––
–––
Ω
V
ID = 50A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
23
RG=1.65Ω
See Fig.15
9.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 3090 –––
V
GS = 0V
–––
–––
460
205
–––
–––
VDS = 25V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
96
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
50
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
D
S
–––
–––
–––
–––
100
400
showing the
integral reverse
A
G
ISM
Pulsed Source Current
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
28
1.3
42
V
TJ = 25°C, IS = 50A, VGS = 0V
ns TJ = 25°C, IF = 50A, VDD = 30V
di/dt = 500A/µs
nC
Qrr
ton
130
195
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
1.1
15
Units
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RθJC (Bottom)
RθJC (Top)
RθJA
°C/W
35
RθJA (<10s)
22
2
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IRFH5106PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
8.0V
6.0V
5.0V
4.5V
4.3V
4.0V
3.8V
8.0V
6.0V
5.0V
4.5V
4.3V
4.0V
3.8V
BOTTOM
BOTTOM
3.8V
1
3.8V
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
I
= 50A
D
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
= 10V
GS
100
10
T
= 150°C
J
T
= 25°C
J
V
= 25V
DS
≤
60µs PULSE WIDTH
1.0
2
3
4
5
6
7
8
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
14.0
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
I
= 50A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
10.0
8.0
= C
V
= 48V
= 30V
rss
oss
gd
= C + C
DS
V
ds
gd
DS
VDS= 12V
C
iss
6.0
C
oss
4.0
C
rss
2.0
0.0
100
0
10
20
30
40
50
60
70
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
V
DS
G
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
IRFH5106PbF
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
T
= 150°C
J
100
10
1
1msec
T
= 25°C
J
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
DC
V
= 0V
1.4
GS
0.1
1
0.2
0.4
V
0.6
0.8
1.0
1.2
1.6
0
1
10
100
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
100
4.0
Limited By Package
3.5
3.0
2.5
2.0
1.5
75
50
25
0
I
I
I
I
= 100µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Case Temperature (°C)
T , Temperature ( °C )
C
J
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Case(Bottom)Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH5106PbF
14
12
10
8
400
300
200
100
0
I
= 50A
I
D
D
TOP
6.1A
15A
BOTTOM 50A
T
= 125°C
J
6
T
= 25°C
J
4
4
6
8
10 12 14
16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
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5
IRFH5106PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFH5106PbF
PQFN 5x6 Outline "B" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFH5106PbF
PQFN 5x6 Outline "B" Tape and Reel
Qualification information†
Industrial††
(per JEDEC JES D47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-ST D-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.077mH, RG = 25Ω, IAS = 50A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/2010
8
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相关型号：
IRFH5206TR2PBF
Power Field-Effect Transistor, 16A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
IRFH5206TRPBF
Power Field-Effect Transistor, 16A I(D), 60V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
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