IRFH5250PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFH5250PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：304K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96265
IRFH5250PbF
HEXFET® Power MOSFET
VDS
25
V
RDS(on) max
(@VGS = 10V)
1.15
m
Qg (typical)
RG (typical)
52
nC
1.3
ID
PQFN 5X6 mm
100
A
(@Tc(Bottom) = 25°C)
Applications
• OR-ing MOSFET for 12V (typical) Bus in-Rush Current
• Battery Operated DC Motor Inverter MOSFET
FeaturesandBenefits
Features
Benefits
Ω
Low RDSon (<1.15 m )
Lower Conduction Losses
Enable better thermal dissipation
Increased Reliability
Low Thermal Resistance to PCB (<0.5°C/W)
100% Rg tested
Low Profile (<0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
Standard Pack
Form
Tape and Reel
Tape and Reel
Note
Quantity
4000
IRFH5250TRPBF
IRFH5250TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
400
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
25
Units
VDS
V
V
Gate-to-Source Voltage
± 20
45
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
I
@ TA = 25°C
D
D
D
D
@ TA = 70°C
31
A
@ TC(Bottom) = 25°C
@ TC(Bottom) = 100°C
100
100
400
3.6
DM
Power Dissipation
P
P
@TA = 25°C
D
D
W
Power Dissipation
@TC(Bottom) = 25°C
250
0.029
-55 to + 150
Linear Derating Factor
Operating Junction and
W/°C
°C
T
T
J
Storage Temperature Range
STG
Notes through are on page 8
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1
09/18/09
IRFH5250PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
0.02
0.9
1.4
1.80
-6.3
–––
–––
–––
–––
–––
110
52
–––
V
∆ΒVDSS/∆TJ
RDS(on)
–––
–––
–––
1.35
–––
–––
–––
–––
–––
181
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V/°C Reference to 25°C, ID = 1mA
1.15
1.75
2.35
VGS = 10V, ID = 50A
mΩ
V
GS = 4.5V, ID = 50A
VGS(th)
∆VGS(th)
IDSS
Gate Threshold Voltage
V
VDS = VGS, ID = 150µA
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
5.0
µA
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
VGS = 20V
150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
-100
VGS = -20V
gfs
–––
–––
78
S
V
V
DS = 13V, ID = 50A
Qg
nC
GS = 10V, VDS = 13V, ID = 50A
Qg
Total Gate Charge
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
13
–––
–––
–––
–––
–––
–––
VDS = 13V
VGS = 4.5V
ID = 50A
7.8
17
nC
15
25
36
nC VDS = 16V, VGS = 0V
Gate Resistance
1.3
28
Ω
–––
–––
td(on)
tr
td(off)
tf
Turn-On Delay Time
VDD = 13V, VGS = 4.5V
Rise Time
46
–––
–––
–––
–––
–––
–––
ID = 50A
ns
Turn-Off Delay Time
30
RG=1.8Ω
Fall Time
19
Ciss
Coss
Crss
Input Capacitance
7174
1758
828
VGS = 0V
pF
Output Capacitance
VDS = 13V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
468
50
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
–––
–––
100
showing the
integral reverse
(Body Diode)
Pulsed Source Current
A
G
ISM
–––
–––
400
p-n junction diode.
(Body Diode)
VSD
trr
T = 25°C, I = 50A, V = 0V
Diode Forward Voltage
–––
–––
–––
–––
37
1.0
56
V
J
S
GS
T = 25°C, I = 50A, VDD = 13V
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
J
F
Qrr
ton
di/dt = 200A/µs
68
102
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
Units
Junction-to-Case
Junction-to-Case
RθJC (Bottom)
RθJC (Top)
0.5
15
35
21
°C/W
Junction-to-Ambient
Junction-to-Ambient
Rθ
JA
RθJA (<10s)
2
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IRFH5250PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
BOTTOM
BOTTOM
2.7V
2.7V
60µs
PULSE WIDTH
≤
60µs
≤
PULSE WIDTH
Tj = 150°C
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
1.6
1.4
1.2
1.0
0.8
0.6
I
= 50A
D
V
= 10V
GS
100
T
= 150°C
J
10
1
T
= 25°C
J
V
= 15V
DS
≤
60µs PULSE WIDTH
0.1
1
1.5
2
2.5
3
3.5 4.5
4
5
-60 -40 -20
0
20 40 60 80 100 120140 160
T , Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 3. Typical Transfer Characteristics
14.0
100000
V
= 0V,
= C
f = 1 MHZ
GS
I
= 50A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
10.0
8.0
V
V
= 20V
= 13V
= C
DS
DS
rss
oss
gd
= C + C
ds
gd
10000
1000
100
C
iss
C
6.0
oss
C
rss
4.0
2.0
0.0
0
20
40
60
80
100 120 140
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
V
G
DS
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
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3
IRFH5250PbF
1000
1000
100
10
OPERATION IN THIS AREA
(
ON)
LIMITED BY R
DS
100
100µsec
1msec
T
= 150°C
J
10
1
10msec
T
= 25°C
J
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
1.4
GS
0.1
1
0.2
0.4
V
0.6
0.8
1.0
1.2
1.6
0
1
10
100
, Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
400
3.0
2.5
2.0
1.5
1.0
0.5
350
Limited By Package
300
250
200
150
100
50
I
= 1.0A
D
ID = 1.0mA
ID = 500µA
ID = 150µA
0
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Case Temperature (°C)
T
J
, Temperature ( °C )
C
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Case (Bottom) Temperature
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH5250PbF
4
3
2
1
0
2000
1800
1600
1400
1200
1000
800
I
D
I
= 50A
D
TOP
18A
24A
BOTTOM 50A
T
= 125°C
J
600
T
= 25°C
J
400
200
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
V
Gate -to -Source Voltage (V)
Starting T , Junction Temperature (°C)
GS,
J
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
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5
IRFH5250PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFH5250PbF
PQFN 5x6 Outline "B" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFH5250PbF
PQFN 5x6 Outline "B" Tape and Reel
Qualification information†
Industrial††
(per JEDEC JES D47F ††† guidelines )
MS L 1
Qualification level
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-ST D-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.37mH, RG = 25Ω, IAS = 50A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production
test capability
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2009
8
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