IRFH5255PBF [INFINEON]
Control MOSFET for high Frequency Buck Converters;型号: | IRFH5255PBF |
厂家: | Infineon |
描述: | Control MOSFET for high Frequency Buck Converters |
文件: | 总8页 (文件大小:221K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRFH5255PbF
HEXFET® Power MOSFET
VDS
25
V
RDS(on) max
(@VGS = 10V)
6.0
m
Ω
Qg (typical)
RG (typical)
7.0
0.6
nC
Ω
ID
PQFN 5X6 mm
51
A
(@Tc(Bottom) = 25°C)
Applications
• Control MOSFET for high Frequency Buck Converters
FeaturesandBenefits
Features
Benefits
Low Charge (typical 7nC)
Low Rg (typical 0.6Ω)
Low Thermal Resistance to PCB (<4.9°C/W)
100% Rg tested
Lower Switching Losses
Lower Switching Losses
Increased Power Density
Increased Reliability
Low Profile (<0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Standard Pack
Orderable part number
Package Type
Note
Form
Quantity
4000
IRFH5255TRPbF
IRFH5255TR2PbF
PQFN 5mm x 6mm
Tape and Reel
Tape and Reel
PQFN 5mm x 6mm
400
EOL notice # 259
Absolute Maximum Ratings
Parameter
Max.
25
Units
VDS
Drain-to-Source Voltage
V
V
Gate-to-Source Voltage
± 20
15
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
I
@ TA = 25°C
D
D
D
D
@ TA = 70°C
12
A
@ TC(Bottom) = 25°C
@ TC(Bottom) = 100°C
51
33
60
DM
Power Dissipation
P
P
@TA = 25°C
3.6
26
D
D
W
Power Dissipation
@TC(Bottom) = 25°C
0.029
-55 to + 150
Linear Derating Factor
Operating Junction and
W/°C
°C
T
T
J
Storage Temperature Range
STG
Notes through ꢀ are on page 8
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IRFH5255PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
ΔΒ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
48
–––
0.02
5.0
–––
–––
6.0
V
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
GS = 10V, ID = 15A
VGS = 4.5V, ID = 15A
Δ
VDSS/ TJ
V
Ω
m
8.8
10.9
2.35
VGS(th)
Gate Threshold Voltage
1.80
-6.3
–––
–––
–––
–––
–––
14.5
7.0
V
VDS = VGS, ID = 25μA
Δ
VGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
5
VDS = 20V, VGS = 0V
μA
150
V
DS = 20V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
V
-100
VGS = -20V
gfs
Qg
Qg
–––
–––
11
S
VDS = 13V, ID = 15A
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC VGS = 10V, VDS = 13V, ID = 15A
Total Gate Charge
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
1.6
–––
–––
–––
–––
–––
–––
VDS = 13V
Qgs2
Qgd
1.2
VGS = 4.5V
nC
2.7
ID = 15A
Qgodr
1.5
See Fig.17 & 18
Qsw
3.8
Qoss
RG
6.0
nC VDS = 16V, VGS = 0V
Ω
Gate Resistance
0.6
–––
–––
td(on)
tr
td(off)
tf
Turn-On Delay Time
7.9
VDD = 13V, VGS = 4.5V
Rise Time
10.7
6.5
–––
–––
–––
–––
–––
–––
ID = 15A
ns
Ω
RG=1.0
See Fig.15
VGS = 0V
Turn-Off Delay Time
Fall Time
3.8
Ciss
Coss
Crss
Input Capacitance
988
289
127
pF
Output Capacitance
VDS = 13V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
53
15
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
–––
–––
51
showing the
integral reverse
(Body Diode)
Pulsed Source Current
A
G
ISM
–––
–––
60
p-n junction diode.
(Body Diode)
VSD
trr
T = 25°C, I = 15A, V = 0V
J S GS
Diode Forward Voltage
–––
–––
–––
–––
11
1.0
17
12
V
T = 25°C, I = 15A, VDD = 13V
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
J
F
Qrr
ton
di/dt = 300A/μs
7.8
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
Units
Junction-to-Case
Junction-to-Case
RθJC (Bottom)
RθJC (Top)
RθJA
4.9
15
35
22
°C/W
Junction-to-Ambient
Junction-to-Ambient
RθJA (<10s)
2
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IRFH5255PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
60μs
Tj = 25°C
PULSE WIDTH
≤
TOP
TOP
4.50V
3.75V
3.50V
3.25V
3.00V
2.75V
2.50V
4.50V
3.75V
3.50V
3.25V
3.00V
2.75V
2.50V
BOTTOM
BOTTOM
1
2.5V
60μs
1
0.1
0.01
PULSE WIDTH
≤
2.50V
1
Tj = 150°C
0.1
0.1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 15A
D
V
= 10V
GS
10
T
= 150°C
J
T
= 25°C
= 15V
J
1
V
DS
≤60μs PULSE WIDTH
0.1
1.5
2
2.5
3
3.5 4.5 5
4
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 3. Typical Transfer Characteristics
14
10000
V
= 0V,
= C
f = 1 MHZ
GS
I = 15A
D
C
C
C
+ C , C
SHORTED
ds
V
V
= 20V
= 13V
iss
gs
gd
DS
DS
12
10
8
= C
rss
oss
gd
= C + C
ds
gd
VDS= 5.0V
C
1000
100
10
iss
C
oss
6
C
rss
4
2
0
0
4
8
12
16
20
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
V
G
DS
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
3
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IRFH5255PbF
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
100μsec
T
= 150°C
J
1msec
T
= 25°C
J
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0
1
10
100
0.2
0.4
0.6
0.8
1.0
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
55
50
45
40
35
30
25
20
15
10
5
3.0
2.5
2.0
1.5
1.0
0.5
I
= 1.0A
D
ID = 1.0mA
ID = 150μA
ID = 25μA
0
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Case Temperature (°C)
T , Temperature ( °C )
C
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Case (Bottom) Temperature
10
D = 0.50
0.20
0.10
0.05
1
0.1
0.02
0.01
0.01
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH5255PbF
20
15
10
5
225
200
175
150
125
100
75
I
= 15A
I
D
D
TOP
4.13A
8.40A
BOTTOM 15A
T
= 125°C
= 25°C
J
50
T
J
25
0
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
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Fig 15b. Switching Time Waveforms
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IRFH5255PbF
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFH5255PbF
PQFN 5x6 Outline "B" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFH5255PbF
PQFN 5x6 Outline "B" Tape and Reel
Qualification information†
Industrial††
(per JEDEC JES D47F ††† guidelines )
MS L 1
Qualification level
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-ST D-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.47mH, RG = 50Ω, IAS = 15A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Revision History
Date
Comments
• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
12/16/2013
•
Updated data sheet with new IR corporate template
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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December 16, 2013
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